WITHDRAWN: Justification of the Schottky emission model at the interface of a precious metal and a perovskite oxide with dilute oxygen vacancies

2006 ◽  
Author(s):  
Ken Numata
2017 ◽  
Vol 46 (40) ◽  
pp. 13903-13911 ◽  
Author(s):  
Xiangzhi Cui ◽  
Ryan O'Hayre ◽  
Svitlana Pylypenko ◽  
Linlin Zhang ◽  
Liming Zeng ◽  
...  

The redox couples Co4+/Co3+ and Fe3+/Fe2+, and oxygen vacancies in mesoporous Ba0.5Sr0.5Co0.8Fe0.2O3−δ endow the precious metal-free cathode catalyst with high ORR catalytic activity, and more importantly excellent methanol tolerance and electro-catalytic stability.


2013 ◽  
Vol 27 (29) ◽  
pp. 1330021 ◽  
Author(s):  
YU-LING JIN ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
GUO-ZHEN YANG

Resistive memories based on the resistive switching effect have promising application in the ultimate nonvolatile data memory field. This brief review focuses on the resistive switching phenomena in the perovskite oxide heterostructures, which originate from the modulation of the interface properties due to the movement of the oxygen vacancies and the ferroelectric polarization. Many recent experiments have been carried out to demonstrate the role of the oxygen vacancies by controlling the content of the oxygen vacancies in the oxide heterostructures with plenty of oxygen vacancies. The important role of the ferroelectric polarization was also carefully confirmed by analyzing the relationship between the current–voltage and polarization–voltage loops in the ferroelectric oxide heterostructures. The physical mechanisms have been revealed based on the developed numerical model.


Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5596
Author(s):  
Marina Tyunina

The excellent electro-mechanical properties of perovskite oxide ferroelectrics make these materials major piezoelectrics. Oxygen vacancies are believed to easily form, migrate, and strongly affect ferroelectric behavior and, consequently, the piezoelectric performance of these materials and devices based thereon. Mobile oxygen vacancies were proposed to explain high-temperature chemical reactions half a century ago. Today the chemistry-enabled concept of mobile oxygen vacancies has been extrapolated to arbitrary physical conditions and numerous effects and is widely accepted. Here, this popular concept is questioned. The concept is shown to conflict with our modern physical understanding of ferroelectrics. Basic electronic processes known from mature semiconductor physics are demonstrated to explain the key observations that are groundlessly ascribed to mobile oxygen vacancies. The concept of mobile oxygen vacancies is concluded to be misleading.


2022 ◽  
Author(s):  
Xuefei Wan ◽  
Weiwei Guo ◽  
Xue Dong ◽  
Hai-Hong Wu ◽  
Xiaofu Sun ◽  
...  

We have synthesized NbOx with oxygen vacancies (OVs) and conducted the first work for nitrate electroreduction to NH3 over Nb oxides. It was a robust non-precious metal catalyst for NH3...


2012 ◽  
Vol 100 (19) ◽  
pp. 193112 ◽  
Author(s):  
Shunsuke Kobayashi ◽  
Scott D. Findlay ◽  
Naoya Shibata ◽  
Teruyasu Mizoguchi ◽  
Yukio Sato ◽  
...  

2017 ◽  
Vol 78 (1) ◽  
pp. 1973-1977
Author(s):  
Tohru Higuchi ◽  
Shoto Furuichi ◽  
Wataru Namiki ◽  
Makoto Takayanagi ◽  
Makoto Minohara ◽  
...  

Author(s):  
Marina Tyunina ◽  
Leonid L. Rusevich ◽  
Eugene A Kotomin ◽  
O Pacherova ◽  
T Kocourek ◽  
...  

Single-crystal epitaxial films of technologically important and scientifically intriguing multifunctional ABO3 perovskite-type metal oxides are essential for advanced applications and understanding of these materials. In such films, a film-substrate misfit...


2016 ◽  
Vol 8 (50) ◽  
pp. 34590-34597 ◽  
Author(s):  
Chen Ge ◽  
Kui-juan Jin ◽  
Qing-hua Zhang ◽  
Jian-yu Du ◽  
Lin Gu ◽  
...  

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