Effects of high hydrogen dilution ratio on surface topography and mechanical properties of hydrogenated nanocrystalline silicon thin films

2011 ◽  
Vol 519 (18) ◽  
pp. 6039-6043 ◽  
Author(s):  
Liqiang Guo ◽  
Jianning Ding ◽  
Jichang Yang ◽  
Guanggui Cheng ◽  
Zhiyong Ling
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Surface Topography ◽  
Nanocrystalline Silicon ◽  
Dilution Ratio ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Effects of high hydrogen dilution ratio on optical properties of hydrogenated nanocrystalline silicon thin films

2011 ◽  
Vol 257 (23) ◽  
pp. 9840-9845 ◽  
Author(s):  
Liqiang Guo ◽  
Jianning Ding ◽  
Jichang Yang ◽  
Guanggui Cheng ◽  
Zhiyong Ling ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nanocrystalline Silicon ◽  
Dilution Ratio ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
H.R. Moutinho ◽  
C.-S. Jiang ◽  
B. Nelson ◽  
Y. Xu ◽  
J. Perkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Seed Layer ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Dilution Ratio ◽  
Crystal Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Influence Of Substrate

AbstractWe have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200° to 400°C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.

Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Mahdi Farrokh Baroughi ◽  
Hassan G. El-Gohary ◽  
Cherry Y. Cheng ◽  
Siva Sivoththaman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Transmission Electron

AbstractHighly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).

Effect of Hydrogen Dilution on Properties of Microcrystalline Silicon Thin Films Prepared by VHF-PECVD

2013 ◽  
Vol 652-654 ◽  
pp. 1739-1742
Author(s):  
Xia Wu ◽  
Long Gu ◽  
Ji Sen Zhang ◽  
Hui Dong Yang
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Structural Characteristics ◽  
Silicon Film ◽  
Crystallization Rate ◽  
Dilution Ratio ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Microcrystalline silicon thin films were deposited on glass substrates by VHF-PECVD varying the ratio of hydrogen dilution from 88% to 98%. The structural characteristics, deposition rate and photosensitivity of the films were investigated. With the improvement of the hydrogen dilution ratio, crystallization rate of the films had been improved which was much more stable than amorphous silicon that the films transmit from amorphous silicon to microcrystalline silicon. However the deposition rate had been reduced with the increase of the hydrogen dilution and the highest deposition rate was 0.43nm/s. The samples showed a downward trend of photosensitivity with optical and dark conductivity both decreasing first then increasing. Thus suitable hydrogen dilution ratio should be chosen according to the different needs in preparation of microcrystalline silicon film.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

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