Effects of high hydrogen dilution ratio on optical properties of hydrogenated nanocrystalline silicon thin films

2011 ◽  
Vol 257 (23) ◽  
pp. 9840-9845 ◽  
Author(s):  
Liqiang Guo ◽  
Jianning Ding ◽  
Jichang Yang ◽  
Guanggui Cheng ◽  
Zhiyong Ling ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nanocrystalline Silicon ◽  
Dilution Ratio ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Effects of high hydrogen dilution ratio on surface topography and mechanical properties of hydrogenated nanocrystalline silicon thin films

2011 ◽  
Vol 519 (18) ◽  
pp. 6039-6043 ◽  
Author(s):  
Liqiang Guo ◽  
Jianning Ding ◽  
Jichang Yang ◽  
Guanggui Cheng ◽  
Zhiyong Ling
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Surface Topography ◽  
Nanocrystalline Silicon ◽  
Dilution Ratio ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Influence of Substrate Temperature and Hydrogen Dilution Ratio on the Properties of Nanocrystalline Silicon Thin Films Grown by Hot-Wire Chemical Vapor Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
H.R. Moutinho ◽  
C.-S. Jiang ◽  
B. Nelson ◽  
Y. Xu ◽  
J. Perkins ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Seed Layer ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Dilution Ratio ◽  
Crystal Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Influence Of Substrate

AbstractWe have studied the influence of substrate temperature and hydrogen dilution ratio on the properties of silicon thin films deposited on single-crystal silicon and glass substrates. We varied the initial substrate temperature from 200° to 400°C and the dilution ratio from 10 to 100. We also studied the effectiveness of the use of a seed layer to increase the crystallinity of the films. The films were analyzed by atomic force microscopy, X-ray diffraction, Raman spectroscopy, and transmission and scanning electron microscopy. We found that as the dilution ratio is increased, the films go from amorphous, to a mixture of amorphous and crystalline, to nanocrystalline. The effect of substrate temperature is to increase the amount of crystallinity in the film for a given dilution ratio. We found that the use of a seed layer has limited effects and is important only for low values of dilution ratio and substrate temperature, when the films have large amounts of the amorphous phase.

Roles of SiH[sub 4] in Growth, Structural Changes and Optical Properties Of Nanocrystalline Silicon Thin Films

2011 ◽  
Author(s):  
A. M. Ali ◽  
T. Inokuma ◽  
A. Al-Hajry ◽  
H. Kobayashi ◽  
I. Umezu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Changes ◽  
Nanocrystalline Silicon ◽  
Silicon Thin Films

Low Temperature Epitaxy of n-Doped Silicon Thin Films Using Plasma Enhanced Chemical Vapor Deposition

2007 ◽  
Vol 989 ◽  
Author(s):  
Mahdi Farrokh Baroughi ◽  
Hassan G. El-Gohary ◽  
Cherry Y. Cheng ◽  
Siva Sivoththaman
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Hydrogen ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Transmission Electron

AbstractHighly conductive epiraxial silicon thin films, with conductivities more than 680 ¥Ø-1cm-1, were obtained using plasma enhanced chemical vapor deposition (PECVD) technique at 300¢ªC. The effect of hydrogen in growth of low temperature extrinsic Si thin films was studied using conductivity, Hall, and Raman measurements, and it was shown that epitaxial growth was possible at hydrogen dilution (HD) ratios more than 85%. The epitaxial growth of the extrinsic Si thin films at high hydrogen dilution regime was confirmed by high resolution transmission electron microscopy (HRTEM).

Optical properties of nanocrystalline silicon thin films produced by size-selected cluster beam deposition

1998 ◽  
Vol 80 (1-4) ◽  
pp. 223-228 ◽  
Author(s):  
M.A Laguna ◽  
V Paillard ◽  
B Kohn ◽  
M Ehbrecht ◽  
F Huisken ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nanocrystalline Silicon ◽  
Cluster Beam ◽  
Silicon Thin Films ◽  
Cluster Beam Deposition ◽  
Beam Deposition

scholarly journals Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Hot-Wire Method with Varied Process Pressure

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
V. S. Waman ◽  
A. M. Funde ◽  
M. M. Kamble ◽  
M. R. Pramod ◽  
R. R. Hawaldar ◽  
...  
Keyword(s):  
Optical Properties ◽  
Cost Effective ◽  
Nanocrystalline Silicon ◽  
Hot Wire ◽  
Structural And Optical Properties ◽  
Silicon Thin Films ◽  
Hydrogen Dilution ◽  
Process Pressure ◽  
Vis Spectroscopy ◽  
Wire Method

Hydrogenated nanocrystalline silicon films were prepared by hot-wire method at low substrate temperature (200∘C) without hydrogen dilution of silane (SiH4). A variety of techniques, including Raman spectroscopy, low angle X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectroscopy, atomic force microscopy (AFM), and UV-visible (UV-Vis) spectroscopy, were used to characterize these films for structural and optical properties. Films are grown at reasonably high deposition rates (>15 Å/s), which are very much appreciated for the fabrication of cost effective devices. Different crystalline fractions (from 2.5% to 63%) and crystallite size (3.6–6.0 nm) can be achieved by controlling the process pressure. It is observed that with increase in process pressure, the hydrogen bonding in the films shifts from Si–H to Si–H2and(Si–H2)ncomplexes. The band gaps of the films are found in the range 1.83–2.11 eV, whereas the hydrogen content remains <9 at.% over the entire range of process pressure studied. The ease of depositing films with tunable band gap is useful for fabrication of tandem solar cells. A correlation between structural and optical properties has been found and discussed in detail.

Effect of Hydrogen Dilution on Properties of Microcrystalline Silicon Thin Films Prepared by VHF-PECVD

2013 ◽  
Vol 652-654 ◽  
pp. 1739-1742
Author(s):  
Xia Wu ◽  
Long Gu ◽  
Ji Sen Zhang ◽  
Hui Dong Yang
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Deposition Rate ◽  
Structural Characteristics ◽  
Silicon Film ◽  
Crystallization Rate ◽  
Dilution Ratio ◽  
Microcrystalline Silicon ◽  
Silicon Thin Films ◽  
Hydrogen Dilution

Microcrystalline silicon thin films were deposited on glass substrates by VHF-PECVD varying the ratio of hydrogen dilution from 88% to 98%. The structural characteristics, deposition rate and photosensitivity of the films were investigated. With the improvement of the hydrogen dilution ratio, crystallization rate of the films had been improved which was much more stable than amorphous silicon that the films transmit from amorphous silicon to microcrystalline silicon. However the deposition rate had been reduced with the increase of the hydrogen dilution and the highest deposition rate was 0.43nm/s. The samples showed a downward trend of photosensitivity with optical and dark conductivity both decreasing first then increasing. Thus suitable hydrogen dilution ratio should be chosen according to the different needs in preparation of microcrystalline silicon film.

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