Transparent conductive titanium-doped indium oxide films prepared by direct current magnetron sputtering

2009 ◽  
Author(s):  
Limei Lin ◽  
Fachun Lai ◽  
Yan Qu ◽  
Rongquan Gai
2002 ◽  
Vol 92 (7) ◽  
pp. 3599-3607 ◽  
Author(s):  
S. Venkataraj ◽  
Oliver Kappertz ◽  
Hansjörg Weis ◽  
Robert Drese ◽  
R. Jayavel ◽  
...  

2021 ◽  
Vol 1160 ◽  
pp. 51-55
Author(s):  
Cheng Ying Shi ◽  
Guang Hong Wang

Hafnium and Hydrogen co-doped indium oxide films (IHFO:H) were prepared by radio frequency magnetron sputtering technology. The effect of hydrogen-donor dopant on the structural, optical and electrical properties of the films was investigated systematically. The resistivity of the IHFO:H film decreased by 2.4×10-4 Ω cm and the mobility improved by 8.2 cm2/Vs compared with Hafnium oxide doped indium oxide film. Employing the IHFO:H film as an electrode for a solar cell can improve efficiency.


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