Thin film characterization of zinc tin oxide deposited by thermal atomic layer deposition

2014 ◽  
Vol 556 ◽  
pp. 186-194 ◽  
Author(s):  
Marja N. Mullings ◽  
Carl Hägglund ◽  
Jukka T. Tanskanen ◽  
Yesheng Yee ◽  
Scott Geyer ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Thin Film Characterization ◽  
Zinc Tin Oxide

High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

2019 ◽  
Vol 11 (16) ◽  
pp. 14892-14901 ◽  
Author(s):  
In-Hwan Baek ◽  
Jung Joon Pyeon ◽  
Seong Ho Han ◽  
Ga-Yeon Lee ◽  
Byung Joon Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films

Atomic Layer Deposition of Lithium-Silicon-Tin Oxide Nanofilms for High Performance Thin Film Batteries Anodes

2020 ◽  
Vol 299 ◽  
pp. 1058-1063
Author(s):  
Denis Nazarov ◽  
Ilya Mitrofanov ◽  
Maxim Yu. Maximov
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Cycling Performance ◽  
Spectral Ellipsometry ◽  
X Ray ◽  
Layer Deposition

Tin oxide is the most promising material for thin film anodes of Li-ion batteries due to its cycling performance and high theoretical capacity. It is assumed that lithium-tin oxide can demonstrate even higher performance. Lithium-silicon-tin oxide nanofilms were prepared by atomic layer deposition (ALD), using the lithium bis (trimethylsilyl) amide (LiHMDS), tetraethyltin (TET) as a metal containing reagents and ozone or water or oxygen plasma as counter-reactants. Monocrystalline silicon (100) and stainless steel (316SS) were used as supports. The thicknesses of the nanofilms were measured by spectral ellipsometry (SE) and scanning electron microscopy (SEM). It was found that oxygen plasma is the most optimal ALD counter-reactant. The composition and structure were studied by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD). The nanofilms contain silicon as impurity, whose source is the ALD precursor (LiHMDS). The nanofilms deposited on stainless steel have shown the high Coulombic efficiency (99.1-99.8%) and cycling performance at a relatively high voltage (0.01 to 2.0V).

Characterization of Ru thin-film conductivity upon atomic layer deposition on H-passivated Si(111)

2012 ◽  
Vol 112 (11) ◽  
pp. 113517 ◽  
Author(s):  
K. Roodenko ◽  
S. K. Park ◽  
J. Kwon ◽  
L. Wielunski ◽  
Y. J. Chabal
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Film Conductivity

Characterization of HfO N thin film formation by in-situ plasma enhanced atomic layer deposition using NH3 and N2 plasmas

2015 ◽  
Vol 349 ◽  
pp. 757-762 ◽  
Author(s):  
Young Bok Lee ◽  
Il-Kwon Oh ◽  
Edward Namkyu Cho ◽  
Pyung Moon ◽  
Hyungjun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Film Formation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Thin Film Formation
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