Preparation of Zinc-tin-oxide Thin Film by Using an Atomic Layer Deposition Methodology

2010 ◽  
Vol 57 (6) ◽  
pp. 1472-1476 ◽  
Author(s):  
Woon-Seop Choi
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Layer Deposition ◽  
Zinc Tin Oxide

High-Performance Thin-Film Transistors of Quaternary Indium–Zinc–Tin Oxide Films Grown by Atomic Layer Deposition

2019 ◽  
Vol 11 (16) ◽  
pp. 14892-14901 ◽  
Author(s):  
In-Hwan Baek ◽  
Jung Joon Pyeon ◽  
Seong Ho Han ◽  
Ga-Yeon Lee ◽  
Byung Joon Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Films ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Zinc Tin Oxide ◽  
Tin Oxide Films

Thin film characterization of zinc tin oxide deposited by thermal atomic layer deposition

2014 ◽  
Vol 556 ◽  
pp. 186-194 ◽  
Author(s):  
Marja N. Mullings ◽  
Carl Hägglund ◽  
Jukka T. Tanskanen ◽  
Yesheng Yee ◽  
Scott Geyer ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Thin Film Characterization ◽  
Zinc Tin Oxide

Physical/chemical properties of tin oxide thin film transistors prepared using plasma-enhanced atomic layer deposition

2012 ◽  
Vol 47 (10) ◽  
pp. 3052-3055 ◽  
Author(s):  
Byung Kook Lee ◽  
Eunae Jung ◽  
Seok Hwan Kim ◽  
Dae Chul Moon ◽  
Sun Sook Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Chemical Properties ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Physical Chemical ◽  
Layer Deposition

Atomic Layer Deposition of Lithium-Silicon-Tin Oxide Nanofilms for High Performance Thin Film Batteries Anodes

2020 ◽  
Vol 299 ◽  
pp. 1058-1063
Author(s):  
Denis Nazarov ◽  
Ilya Mitrofanov ◽  
Maxim Yu. Maximov
Keyword(s):  
Thin Film ◽  
Stainless Steel ◽  
Atomic Layer Deposition ◽  
Tin Oxide ◽  
Oxygen Plasma ◽  
Atomic Layer ◽  
Cycling Performance ◽  
Spectral Ellipsometry ◽  
X Ray ◽  
Layer Deposition

Tin oxide is the most promising material for thin film anodes of Li-ion batteries due to its cycling performance and high theoretical capacity. It is assumed that lithium-tin oxide can demonstrate even higher performance. Lithium-silicon-tin oxide nanofilms were prepared by atomic layer deposition (ALD), using the lithium bis (trimethylsilyl) amide (LiHMDS), tetraethyltin (TET) as a metal containing reagents and ozone or water or oxygen plasma as counter-reactants. Monocrystalline silicon (100) and stainless steel (316SS) were used as supports. The thicknesses of the nanofilms were measured by spectral ellipsometry (SE) and scanning electron microscopy (SEM). It was found that oxygen plasma is the most optimal ALD counter-reactant. The composition and structure were studied by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS), X-ray Photoelectron Spectroscopy (XPS) and X-ray diffraction (XRD). The nanofilms contain silicon as impurity, whose source is the ALD precursor (LiHMDS). The nanofilms deposited on stainless steel have shown the high Coulombic efficiency (99.1-99.8%) and cycling performance at a relatively high voltage (0.01 to 2.0V).

scholarly journals Atomic layer deposited zinc tin oxide channel for amorphous oxide thin film transistors

2012 ◽  
Vol 101 (11) ◽  
pp. 113507 ◽  
Author(s):  
Jaeyeong Heo ◽  
Sang Bok Kim ◽  
Roy G. Gordon
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Film ◽  
Amorphous Oxide ◽  
Zinc Tin Oxide
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