A strategy for performance enhancement of HfInZnO thin film transistors using a double-active-layer structure

2014 ◽  
Vol 562 ◽  
pp. 592-596 ◽  
Author(s):  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xing-Wei Dinga ◽  
Wen-Qing Zhu ◽  
Xue-Yin Jiang ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Layer Structure

51.3: A Mobility Enhancing Method Adopting A Multi-Active Layer Structure in Thin Film Transistors

2015 ◽  
Vol 46 (1) ◽  
pp. 772-774
Author(s):  
Ming-Yen Tsai ◽  
Ting-Chang Chang ◽  
Ann-Kuo Chu ◽  
Tien-Yu Hsieh ◽  
Ching-En Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Layer Structure

P-19: Dual Active Layer Structure of Nitrogen Doped Amorphous InSnZnO Thin-Film Transistors for Negative Gate Bias Stability Improvement

2016 ◽  
Vol 47 (1) ◽  
pp. 1186-1188 ◽  
Author(s):  
GongTan Li ◽  
Bo-Ru Yang ◽  
Chuan Liu ◽  
Chia-Yu Lee ◽  
Yuan-Chun Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Layer Structure ◽  
Gate Bias ◽  
Nitrogen Doped ◽  
Bias Stability

Electrical Characteristics of Thin-Film Transistors with Double-Active-Layer Structure

1995 ◽  
Vol 34 (Part 1, No. 2A) ◽  
pp. 470-475
Author(s):  
Meng-Jin Tsai ◽  
Ping-Wei Wang ◽  
Huan-Ping Su ◽  
Huang-Chung Cheng
Keyword(s):  
Thin Film ◽  
Active Layer ◽  
Thin Film Transistors ◽  
Layer Structure ◽  
Electrical Characteristics

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

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