In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron mobility transistor applications

Thin Solid Films ◽

10.1016/j.tsf.2020.138128 ◽

2020 ◽

Vol 708 ◽

pp. 138128

Author(s):

R. Lingaparthi ◽

N. Dharmarasu ◽

K. Radhakrishnan ◽

M. Agrawal

Keyword(s):

Electron Mobility ◽

Structural Characteristics ◽

High Electron Mobility Transistor ◽

In Situ Stress ◽

High Electron ◽

Stress Evolution ◽

Si Substrate ◽

High Electron Mobility

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Group III–V Semiconductor High Electron Mobility Transistor on Si Substrate

Different Types of Field-Effect Transistors - Theory and Applications ◽

10.5772/intechopen.68181 ◽

2017 ◽

Author(s):

Ravindiran Munusami ◽

Shankar Prabhakar

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Group Iii ◽

Group Iii V Semiconductor

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Growth of very-high-mobility AlGaSb∕InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Applied Physics Letters ◽

10.1063/1.2431567 ◽

2007 ◽

Vol 90 (2) ◽

pp. 023509 ◽

Cited By ~ 18

Author(s):

Y. C. Lin ◽

H. Yamaguchi ◽

E. Y. Chang ◽

Y. C. Hsieh ◽

M. Ueki ◽

...

Keyword(s):

Electron Mobility ◽

High Speed ◽

High Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Transistor Structure ◽

High Electron Mobility ◽

Very High

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AlGaAs/InGaAs High Electron Mobility Transistor Grown on Si Substrate with Ge/GexSi1-xMetamorphic Buffer Layers

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7069 ◽

2008 ◽

Vol 47 (9) ◽

pp. 7069-7072 ◽

Cited By ~ 3

Author(s):

Edward Yi Chang ◽

Jui-Chien Huang ◽

Yueh-Chin Lin ◽

Yen-Chang Hsieh ◽

Chia-Yuan Chang

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistor ◽

Buffer Layers ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility

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Analysis of Deep Levels in AlGaN/GaN High Electron Mobility Transistor on Si Substrate Using Capacitance Deep Level Transient Spectroscopy

Advanced Science Engineering and Medicine ◽

10.1166/asem.2013.1396 ◽

2013 ◽

Vol 5 (10) ◽

pp. 1035-1038

Author(s):

M. Charfeddine ◽

M. A. Zaidi ◽

H. Maaref

Keyword(s):

Electron Mobility ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Electron Mobility Transistor ◽

Deep Levels ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Transient Spectroscopy

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Reduction of buffer leakage current in AlGaN/GaN high-electron-mobility-transistor structure on Si substrate by reducing the dislocation density in AlN buffer layer

2007 European Microwave Integrated Circuit Conference ◽

10.1109/emicc.2007.4412655 ◽

2007 ◽

Author(s):

Yasuhiro Oda ◽

Noriyuki Watanabe ◽

Masanobu Hiroki ◽

Takuma Yagi ◽

Takashi Kobayashi

Keyword(s):

Dislocation Density ◽

Buffer Layer ◽

Leakage Current ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Transistor Structure ◽

High Electron Mobility ◽

Aln Buffer

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The fabrication of a back-gated high electron mobility transistor-a novel approach using MBE regrowth on an in situ ion beam patterned epilayer

Semiconductor Science and Technology ◽

10.1088/0268-1242/8/3/020 ◽

1993 ◽

Vol 8 (3) ◽

pp. 415-422 ◽

Cited By ~ 53

Author(s):

E H Linfield ◽

G A C Jones ◽

D A Ritchie ◽

J H Thompson

Keyword(s):

Electron Mobility ◽

Ion Beam ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Novel Approach

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Inverted-Type InGaAs Metal–Oxide–Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2 A/mm

Applied Physics Express ◽

10.1143/apex.5.104201 ◽

2012 ◽

Vol 5 (10) ◽

pp. 104201 ◽

Cited By ~ 17

Author(s):

Xiuju Zhou ◽

Qiang Li ◽

Chak Wah Tang ◽

Kei May Lau

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Drain Current ◽

High Electron Mobility Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility

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Molecular beam epitaxy growth of In0.52Al0.48As∕In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

Applied Physics Letters ◽

10.1063/1.2189607 ◽

2006 ◽

Vol 88 (13) ◽

pp. 132108 ◽

Cited By ~ 7

Author(s):

Soo-Ghang Ihn ◽

Seong June Jo ◽

Jong-In Song

Keyword(s):

Molecular Beam Epitaxy ◽

Rapid Thermal Annealing ◽

Electron Mobility ◽

Molecular Beam ◽

High Electron Mobility Transistor ◽

Molecular Beam Epitaxy Growth ◽

High Electron ◽

High Electron Mobility ◽

Growth Interruption

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Impact of the AlN nucleation layer on the variation of the vertical-direction breakdown voltage of AlGaN/GaN high-electron-mobility transistor structures on a Si substrate

physica status solidi (a) ◽

10.1002/pssa.201600843 ◽

2017 ◽

Vol 214 (8) ◽

pp. 1600843 ◽

Cited By ~ 5

Author(s):

Yuya Yamaoka ◽

Ken Kakamu ◽

Akinori Ubukata ◽

Yoshiki Yano ◽

Toshiya Tabuchi ◽

...

Keyword(s):

Breakdown Voltage ◽

Electron Mobility ◽

Vertical Direction ◽

High Electron Mobility Transistor ◽

High Electron ◽

Si Substrate ◽

Nucleation Layer ◽

High Electron Mobility

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In-situ-SiN/AlN/Al0.05Ga0.95N High Electron-Mobility Transistors on Si-Substrate Using Al2O3/SiO2 Passivation

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3064557 ◽

2021 ◽

Vol 9 ◽

pp. 348-352

Author(s):

Weihang Zhang ◽

Liyu Fu ◽

Xi Liu ◽

Jincheng Zhang ◽

Shenglei Zhao ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Si Substrate ◽

High Electron Mobility ◽

Electron Mobility Transistors

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