AbstractThe electrical and optical properties of room temperature laser deposited indium tin oxide films were studied. It was found that the resistivity of the film was quite sensitive to the deposition conditions. At the optimized conditions, films with a bulk resistivity value of 2.8×10−4 Ω-cm and optical transmission of greater than 90% could be obtained. By using an in situ resistance measurement, it was shown that the initial growth mode was via island formation. Additionally, a classic transition from two- to three-dimensional behavior for the resistance was observed.
