Channelling contrast analysis of lattice images: Conditions for probe-insensitive STEM

2014 ◽  
Vol 136 ◽  
pp. 216-223 ◽  
Author(s):  
Chris J. Rossouw ◽  
Christian Dwyer ◽  
Hadas Katz-Boon ◽  
Joanne Etheridge
Keyword(s):  
Contrast Analysis ◽  
Lattice Images

Quantitative Analysis of Displacement at 90° Domain Boundaries In BaTiO3 and PbTiO3

1996 ◽  
Vol 466 ◽  
Author(s):  
Frances M. Ross ◽  
Roar Kilaas ◽  
Etienne Snoeck ◽  
Martin Hÿtch ◽  
Alain Thorel ◽  
...  
Keyword(s):  
Electric Fields ◽  
Local Strain ◽  
Ferroelectric Ceramics ◽  
Displacement Fields ◽  
Analysis Technique ◽  
Domain Boundaries ◽  
Contrast Analysis ◽  
Lattice Images ◽  
Small Lattice ◽  
Lattice Distortions

ABSTRACTIn this paper we discuss the measurement of long range displacement fields associated with 90° domain boundaries in the ferroelectric ceramics BaTiO3 and PbTiO3. We have calculated displacement fields from high resolution lattice images by two techniques: firstly, measuring the positions of peaks in the images, and secondly, using a geometric phase analysis technique to magnify small lattice distortions. We describe the results and consider the complementary use of Fresnel contrast analysis to characterize local strain and electric fields near the boundaries.

One Million Direct Magnification Microscopy

1971 ◽  
Vol 29 ◽  
pp. 166-167
Author(s):  
J. A. Hugo ◽  
V. A. Phillips
Keyword(s):  
Electron Microscopy ◽  
High Resolution Electron Microscopy ◽  
Illumination Level ◽  
Level Of Detail ◽  
Photographic Emulsion ◽  
Low Contrast ◽  
Fluorescent Screen ◽  
Resolution Electron ◽  
Lattice Images ◽  
Electron Microscopes

A continuing problem in high resolution electron microscopy is that the level of detail visible to the microscopist while he is taking a picture is inferior to that obtainable by the microscope, readily readable on a photographic emulsion and visible in an enlargement made from the plate. Line resolutions, of 2Å or better are now achievable with top of the line 100kv microscopes. Taking the resolution of the human eye as 0.2mm, this indicates a need for a direct viewing magnification of at least one million. However, 0.2mm refers to optimum viewing conditions in daylight or the equivalent, and certainly does not apply to a (colored) image of low contrast and illumination level viewed on a fluorescent screen through a glass window by the dark-adapted eye. Experience indicates that an additional factor of 5 to 10 magnification is needed in order to view lattice images with line spacings of 2 to 4Å. Fortunately this is provided by the normal viewing telescope supplied with most electron microscopes.

Observation of Phase Contrast Images in STEM and CTEM Modes by Using 100 kV Field Emission Electron Gun

1974 ◽  
Vol 32 ◽  
pp. 390-391
Author(s):  
Y. Harada ◽  
T. Goto ◽  
H. Koike ◽  
T. Someya
Keyword(s):  
Field Emission ◽  
Phase Contrast ◽  
Image Formation ◽  
Fresnel Diffraction ◽  
Experimental Results ◽  
Electron Gun ◽  
Scanning Microscopy ◽  
Emission Electron ◽  
Lattice Images

Since phase contrasts of STEM images, that is, Fresnel diffraction fringes or lattice images, manifest themselves in field emission scanning microscopy, the mechanism for image formation in the STEM mode has been investigated and compared with that in CTEM mode, resulting in the theory of reciprocity. It reveals that contrast in STEM images exhibits the same properties as contrast in CTEM images. However, it appears that the validity of the reciprocity theory, especially on the details of phase contrast, has not yet been fully proven by the experiments. In this work, we shall investigate the phase contrast images obtained in both the STEM and CTEM modes of a field emission microscope (100kV), and evaluate the validity of the reciprocity theory by comparing the experimental results.

7-beam lattice images of (110) oriented Ge

1978 ◽  
Vol 36 (1) ◽  
pp. 290-291
Author(s):  
J.R. Parsons ◽  
C.W. Hoelke
Keyword(s):  
Image Features ◽  
Objective Lens ◽  
Lattice Plane ◽  
Lattice Image ◽  
Crystalline Defects ◽  
Transmission Electron ◽  
Lattice Images ◽  
Electron Microscopes ◽  
Structural Aspects ◽  
Beam Lattice

The direct imaging of a crystal lattice has intrigued electron microscopists for many years. What is of interest, of course, is the way in which defects perturb their atomic regularity. There are problems, however, when one wishes to relate aperiodic image features to structural aspects of crystalline defects. If the defect is inclined to the foil plane and if, as is the case with present 100 kV transmission electron microscopes, the objective lens is not perfect, then terminating fringes and fringe bending seen in the image cannot be related in a simple way to lattice plane geometry in the specimen (1).The purpose of the present work was to devise an experimental test which could be used to confirm, or not, the existence of a one-to-one correspondence between lattice image and specimen structure over the desired range of specimen spacings. Through a study of computed images the following test emerged.

Calculation of structure images of crystalline defects

1978 ◽  
Vol 36 (1) ◽  
pp. 282-283
Author(s):  
M.A. O'Keefe ◽  
Sumio Iijima
Keyword(s):  
Diffuse Scattering ◽  
Computing Time ◽  
Continuous Distribution ◽  
Sampling Interval ◽  
Reciprocal Space ◽  
Objective Lens ◽  
Lattice Images ◽  
Slice Method ◽  
Space Cell ◽  
Beam Lattice

We have extended the multi-slice method of computating many-beam lattice images of perfect crystals to calculations for imperfect crystals using the artificial superlattice approach. Electron waves scattered from faulted regions of crystals are distributed continuously in reciprocal space, and all these waves interact dynamically with each other to give diffuse scattering patterns.In the computation, this continuous distribution can be sampled only at a finite number of regularly spaced points in reciprocal space, and thus finer sampling gives an improved approximation. The larger cell also allows us to defocus the objective lens further before adjacent defect images overlap, producing spurious computational Fourier images. However, smaller cells allow us to sample the direct space cell more finely; since the two-dimensional arrays in our program are limited to 128X128 and the sampling interval shoud be less than 1/2Å (and preferably only 1/4Å), superlattice sizes are limited to 40 to 60Å. Apart from finding a compromis superlattice cell size, computing time must be conserved.

The Interpretation of Crystal Lattice Images

1972 ◽  
Vol 30 ◽  
pp. 550-551
Author(s):  
J. M. Cowley ◽  
Sumio Iijima
Keyword(s):  
Crystal Orientation ◽  
Diffraction Theory ◽  
Phase Changes ◽  
Electron Wave ◽  
Crystal Lattices ◽  
Heavy Atoms ◽  
Lattice Images ◽  
The Right ◽  
Intuitive Interpretation ◽  
Suitable Approximation

The imaging of detailed structures of crystal lattices with 3 to 4Å resolution, given the correct conditions of microscope defocus and crystal orientation and thickness, has been used by Iijima (this conference) for the study of new types of crystal structures and the defects in known structures associated with fluctuations of stoichiometry. The image intensities may be computed using n-beam dynamical diffraction theory involving several hundred beams (Fejes, this conference). However it is still important to have a suitable approximation to provide an immediate rough estimate of contrast and an evaluation of the intuitive interpretation in terms of an amplitude object.For crystals 100 to 150Å thick containing moderately heavy atoms the phase changes of the electron wave vary by about 10 radians suggesting that the “optimum defocus” theory of amplitude contrast for thin phase objects due to Scherzer and others can not apply, although it does predict the right defocus for optimum imaging.

Point and planar defects in the iron sulfide compounds Fe1-xS

1984 ◽  
Vol 42 ◽  
pp. 434-435
Author(s):  
Thao A. Nguyen
Keyword(s):  
Low Temperatures ◽  
Direct Evidence ◽  
Iron Sulfide ◽  
Planar Defects ◽  
Selective Area ◽  
Vacancy Ordering ◽  
Different Types ◽  
Lattice Images ◽  
The Subject ◽  
Beam Lattice

It is well known that the large deviations from stoichiometry in iron sulfide compounds, Fe1-xS (0≤x≤0.125), are accommodated by iron vacancies which order and form superstructures at low temperatures. Although the ordering of the iron vacancies has been well established, the modes of vacancy ordering, hence superstructures, as a function of composition and temperature are still the subject of much controversy. This investigation gives direct evidence from many-beam lattice images of Fe1-xS that the 4C superstructure transforms into the 3C superstructure (Fig. 1) rather than the MC phase as previously suggested. Also observed are an intrinsic stacking fault in the sulfur sublattice and two different types of vacancy-ordering antiphase boundaries. Evidence from selective area optical diffractograms suggests that these planar defects complicate the diffraction pattern greatly.

Defects in ion implanted silicon

1978 ◽  
Vol 36 (1) ◽  
pp. 386-387
Author(s):  
J.A. Lambert ◽  
P.S. Dobson
Keyword(s):  
Defect Structure ◽  
Dislocation Loops ◽  
Frank Loop ◽  
Burgers Vector ◽  
Temperature Range ◽  
Perfect Dislocation ◽  
Contrast Analysis ◽  
Image Position ◽  
Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

Black-white contrast of dislocation loops

1978 ◽  
Vol 36 (1) ◽  
pp. 328-329
Author(s):  
J. J. Hren ◽  
W. D. Cooper ◽  
L. J. Sykes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Loops ◽  
Major Premise ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Primary Means ◽  
Contrast Analysis ◽  
Dot Product ◽  
Imaging Conditions

Small dislocation loops observed by transmission electron microscopy exhibit a characteristic black-white strain contrast when observed under dynamical imaging conditions. In many cases, the topography and orientation of the image may be used to determine the nature of the loop crystallography. Two distinct but somewhat overlapping procedures have been developed for the contrast analysis and identification of small dislocation loops. One group of investigators has emphasized the use of the topography of the image as the principle tool for analysis. The major premise of this method is that the characteristic details of the image topography are dependent only on the magnitude of the dot product between the loop Burgers vector and the diffracting vector. This technique is commonly referred to as the (g•b) analysis. A second group of investigators has emphasized the use of the orientation of the direction of black-white contrast as the primary means of analysis.

Computer averaging of lattice images of poly-4-methyl-pentene-1 (P4mp1): Noise created artifacts

1987 ◽  
Vol 45 ◽  
pp. 388-389
Author(s):  
P. Pradère ◽  
J.F. Revol ◽  
R. St. John Manley
Keyword(s):  
Low Dose ◽  
Polymer Concentration ◽  
Processing System ◽  
Limiting Factor ◽  
Dilute Solution ◽  
New Techniques ◽  
Dose Unit ◽  
Lattice Images ◽  
Dose Imaging ◽  
Imaging Conditions

Although radiation damage is the limiting factor in HREM of polymers, new techniques based on low dose imaging at low magnification have permitted lattice images to be obtained from very radiation sensitive polymers such as polyethylene (PE). This paper describes the computer averaging of P4MP1 lattice images. P4MP1 is even more sensitive than PE (total end point dose of 27 C m-2 as compared to 100 C m-2 for PE at 120 kV). It does, however, have the advantage of forming flat crystals from dilute solution and no change in d-spacings is observed during irradiation.Crystals of P4MP1 were grown at 60°C in xylene (polymer concentration 0.05%). Electron microscopy was performed with a Philips EM 400 T microscope equipped with a Low Dose Unit and operated at 120 kV. Imaging conditions were the same as already described elsewhere. Enlarged micrographs were digitized and processed with the Spider image processing system.

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