Characterization of Ta and TaN diffusion barriers beneath Cu layers using picosecond ultrasonics

Ultrasonics ◽  
2006 ◽  
Vol 44 ◽  
pp. e1269-e1275 ◽  
Author(s):  
Juerg Bryner ◽  
Dieter M. Profunser ◽  
Jacqueline Vollmann ◽  
Elisabeth Mueller ◽  
Juerg Dual
2020 ◽  
Vol 128 (16) ◽  
pp. 160902 ◽  
Author(s):  
Fernando Pérez-Cota ◽  
Rafael Fuentes-Domínguez ◽  
Salvatore La Cavera ◽  
William Hardiman ◽  
Mengting Yao ◽  
...  

2005 ◽  
Vol 40 (13) ◽  
pp. 3383-3393 ◽  
Author(s):  
Glenn Sundberg ◽  
Pradeep Paul ◽  
Changmo Sung ◽  
Thomas Vasilos

1985 ◽  
Vol 45 ◽  
Author(s):  
A. Armigliato ◽  
M. Finetti ◽  
E. Gabilli ◽  
S. Guerri ◽  
P. Ostoja ◽  
...  

ABSTRACTTiN films prepared by implantation onto evaporated Ti layers are tested as diffusion barriers in contact with a thick Al overlayer. Both the TiN/Al and TiSi2/TiN/Al contact structures are evaluated, after thermal treatments up to 600 C, on shallow junction diodes and four terminal resistor test patterns for contact resistance measurements. It is shown that, upon annealing at 600 C, the TiSi2/TiN/Al contact system still exhibits excellent electrical performances. The degradation is found to depend on TiSi2 thickness and contact area.


1992 ◽  
Vol 7 (1-6) ◽  
pp. 149-163 ◽  
Author(s):  
O.B WRIGHT ◽  
T. HYOGUCHI ◽  
K. KAWASHIMA

2005 ◽  
Author(s):  
Jacqueline Vollmann ◽  
Dieter M. Profunser ◽  
Jurg Bryner ◽  
Jurg Dual

1987 ◽  
Vol 23 (2) ◽  
pp. 1347-1350 ◽  
Author(s):  
D. Smathers ◽  
P. O'Larey ◽  
M. Siddall ◽  
J. Peterson ◽  
Wm. McDonald

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