Impact of thickness on crystal structure and optical properties for thermally evaporated PbSe thin films

Crystal structure, microstructure, and optical properties of TiO2 thin films deposited on quartz substrates by metal-organic chemical vapor deposition (MOCVD) in the temperature range from 250[Formula: see text]C to 450[Formula: see text]C have been studied. The crystal structure, thickness, microstructure, and optical properties have been carried out using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), atomic force microscope (AFM), and UV-visible transmittance spectroscopy, respectively. XRD patterns show that the obtained films are pure anatase. Simultaneously, the crystal size calculated using XRD peaks, and the grain size measured by AFM decrease with the increase in deposition temperature. Moreover, the texture of the films change and roughness decrease with the increase in deposition temperature. The spectrophotometric transmittance spectra have been used to calculate the refractive index, extinction coefficient, dielectric constant, optical energy gap, and porosity of the deposited films. While the refractive index and dielectric constant decrease with the increase of deposition temperature, the porosity shows the opposite.

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Effect of Co-doping on Microstructural, Crystal Structure and Optical Properties of Ti[sub 1−x]CO[sub x]O[sub 2] Thin films Deposited on Si Substrate by MOCVD Method

10.1063/1.2906075 ◽

2008 ◽

Cited By ~ 1

Author(s):

E. Supriyanto ◽

H. Sutanto ◽

A. Subagio ◽

H. Saragih ◽

M. Budiman ◽

...

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Optical Properties ◽

Si Substrate ◽

Co Doping

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Structure and Optical Properties of Al1−xScxN Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.537.140 ◽

2013 ◽

Vol 537 ◽

pp. 140-143 ◽

Cited By ~ 2

Author(s):

Jing Yang ◽

Miao Miao Cao ◽

Yu Dong Li ◽

Yi Gang Chen

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Grain Size ◽

Optical Properties ◽

Band Gap Energy ◽

Wave Number ◽

Gap Energy ◽

Aln Film ◽

Dc Magnetron Reactive Sputtering ◽

Xrd Patterns

In this study, c-axis oriented AlN and Al1−xScxN films have been successfully grown on Si (100) and quartz glass by DC magnetron reactive sputtering method. The XRD patterns show that the crystal structure of the Al1−xScxN films is (002) orientation. The grain size and band gap energy (Eg) of the Al1−xScxN films decrease as the Sc concentration increases. The frequency of the E2 (high) mode observed in the Al1−xScxN films shows higher red shift compared to that observed in AlN film and the peak shifts to the low wave number with the increasing of Sc concentration.

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