The effect of high resistivity AlOδ layer on low-power consumption of TaOx based resistive switching memory

Vacuum ◽  
2020 ◽  
Vol 174 ◽  
pp. 109186
Author(s):  
Jin Shi Zhao ◽  
Chen Wang ◽  
Yu Yan ◽  
Yu Ting Chen ◽  
Wen Tao Sun ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
High Resistivity ◽  
Low Power Consumption ◽  
Resistive Switching Memory ◽  
Switching Memory

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

2012 ◽  
Vol 10 (1) ◽  
pp. 013102-13105 ◽  
Author(s):  
Jianwei Zhao Jianwei Zhao ◽  
Fengjuan Liu Fengjuan Liu ◽  
Jian Sun Jian Sun ◽  
Haiqin Huang Haiqin Huang ◽  
Zuofu Hu Zuofu Hu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Memory Devices ◽  
Bipolar Resistive Switching ◽  
Switching Characteristics

scholarly journals Localised nanoscale resistive switching in GaP thin films with low power consumption

2017 ◽  
Vol 5 (8) ◽  
pp. 2153-2159 ◽  
Author(s):  
Fran Kurnia ◽  
Chunli Liu ◽  
Guangqing Liu ◽  
Rama K. Vasudevan ◽  
Sang Mo Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Power Consumption ◽  
Low Power ◽  
Grain Boundaries ◽  
Resistive Switching ◽  
Low Power Consumption ◽  
Conductive Afm ◽  
Switching Mechanism ◽  
Switching Behaviour

Resistive switching behaviour is observed for GaP thin films. Conductive AFM and FORC-IV measurements show that the current is localised at grain boundaries. The switching mechanism is driven by Ga migration along the grain boundaries.

Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density

2016 ◽  
Vol 8 (35) ◽  
pp. 23348-23355 ◽  
Author(s):  
Ahmed Al-Haddad ◽  
Chengliang Wang ◽  
Haoyuan Qi ◽  
Fabian Grote ◽  
Liaoyong Wen ◽  
...  
Keyword(s):  
Power Consumption ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Memory Arrays ◽  
Ultrahigh Density ◽  
Switching Memory
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