Localised nanoscale resistive switching in GaP thin films with low power consumption
2017 ◽
Vol 5
(8)
◽
pp. 2153-2159
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Keyword(s):
Resistive switching behaviour is observed for GaP thin films. Conductive AFM and FORC-IV measurements show that the current is localised at grain boundaries. The switching mechanism is driven by Ga migration along the grain boundaries.
Keyword(s):
2012 ◽
Vol 10
(1)
◽
pp. 013102-13105
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2019 ◽
Vol 8
(10)
◽
pp. P563-P566
Keyword(s):
Keyword(s):
2013 ◽
Vol 427-429
◽
pp. 974-977
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2015 ◽
Vol 27
(3)
◽
pp. 2183-2188
◽
Keyword(s):
2020 ◽
Vol 64
(1-4)
◽
pp. 165-172
Keyword(s):
2016 ◽
Vol 136
(11)
◽
pp. 1555-1566
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Keyword(s):