Influence of the aluminum ion implantation dose on the phase composition of submicrocrystalline titanium

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

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Investigation of Ga ion implantation-induced damage in single-crystal 6H-SiC

Journal of Micromanufacturing ◽

10.1177/2516598418785507 ◽

2018 ◽

Vol 1 (2) ◽

pp. 115-123 ◽

Cited By ~ 1

Author(s):

Zhongdu He ◽

Zongwei Xu ◽

Mathias Rommel ◽

Boteng Yao ◽

Tao Liu ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Focused Ion Beam ◽

Electron Backscatter Diffraction ◽

Ion Beam ◽

Implantation Dose ◽

Formation Mechanisms ◽

Schematic Model ◽

Dose Threshold ◽

Before And After

In order to investigate the damage in single-crystal 6H-silicon carbide (SiC) in dependence on ion implantation dose, ion implantation experiments were performed using the focused ion beam technique. Raman spectroscopy and electron backscatter diffraction were used to characterize the 6H-SiC sample before and after ion implantation. Monte Carlo simulations were applied to verify the characterization results. Surface morphology of the implantation area was characterized by the scanning electron microscope (SEM) and atomic force microscope (AFM). The ‘swelling effect’ induced by the low-dose ion implantation of 1014−1015 ions cm−2 was investigated by AFM. The typical Raman bands of single-crystal 6H-SiC were analysed before and after implantation. The study revealed that the thickness of the amorphous damage layer was increased and then became saturated with increasing ion implantation dose. The critical dose threshold (2.81 × 1014−3.26 × 1014 ions cm−2) and saturated dose threshold (˜5.31 × 1016 ions cm−2) for amorphization were determined. Damage formation mechanisms were discussed, and a schematic model was proposed to explain the damage formation.

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Ion Implantation Damage in Aluminum Studied by Quantitative Electron Chanelling and Tem.

MRS Proceedings ◽

10.1557/proc-100-163 ◽

1988 ◽

Vol 100 ◽

Author(s):

Ronald G. Vardiman

Keyword(s):

Dislocation Density ◽

Ion Implantation ◽

Linear Relationship ◽

Aluminum Ion ◽

Weak Beam ◽

Implantation Damage ◽

Boron Implantation

ABSTRACTElectron chanelling linewidth changes in aluminum have been measured as a function of dose for boron and aluminum ion implantation. Weak beam TEM observations assist interpretation of the results by showing the nature and degree of the damage. For self implantation, a linear relationship between dose, linewidth, and dislocation density has been found up to 3×1017ions/cm2. For boron implantation, a new point-like defect appears at the higher boron concentrations, giving a much slower increase of chanelling linewidth with dose above l×1016 ions/cm2. Boron interaction with the damage stabilizes higher damage acumilations than for sel f-i mpl antati on.

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