In situ observation of reconstruction related surface stress during molecular beam epitaxy (MBE) growth of III–V compounds

1999 ◽  
Vol 201-202 ◽  
pp. 113-117 ◽  
Author(s):  
J.P Silveira ◽  
F Briones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Stress ◽  
Molecular Beam ◽  
In Situ Observation ◽  
Mbe Growth

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

2009 ◽  
Vol 1178 ◽  
Author(s):  
Yi-Lu Chang ◽  
Arya Fatehi ◽  
Feng Li ◽  
Zetian Mi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Room Temperature ◽  
Molecular Beam ◽  
Stacking Faults ◽  
Seeding Layer ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial

AbstractWe have performed a detailed investigation of the molecular beam epitaxial (MBE) growth and characterization of InN nanowires spontaneously formed on Si(111) substrates under nitrogen rich conditions. Controlled epitaxial growth of InN nanowires (NWs) has been demonstrated by using an in situ deposited thin (˜ 0.5 nm) In seeding layer prior to the initiation of growth. By applying this technique, we have achieved non-tapered epitaxial InN NWs that are relatively free of dislocations and stacking faults. Such InN NW ensembles display strong photoluminescence (PL) at room temperature and considerably reduced spectral broadening, with very narrow spectral linewidths of 22 and 40 meV at 77 K and 300 K, respectively.

Molecular Beam Epitaxy of II/VI Compounds for Blue/Green Laser Diodes

1994 ◽  
Vol 340 ◽  
Author(s):  
J.M. Gaines
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Diodes ◽  
High Energy ◽  
Green Laser ◽  
Mbe Growth ◽  
Lattice Matching ◽  
Migration Enhanced Epitaxy ◽  
Sticking Coefficients

ABSTRACTThe growth of I1/VI epitaxial layers by molecular beam epitaxy (MBE) for blue/green lasers is described. To elucidate the issues in the growth of II/VI materials, the differences between II/V and II/VI MBE growth are addressed, including factors such as: substrates, molecular beam sources, lattice matching, sticking coefficients, and surface diffusion. Results of reflection high-energy diffraction (RHEED) oscillation measurements are presented. RHEED oscillations have proven to be a valuable in-situ tool for controlling certain aspects of 1I/VI MBE growth, such as ZnSySe1-y composition, Zn1-xMgxSe composition, and the growth rate of ZnSe during migration-enhanced epitaxy.

Patterned Excimer Laser Etching of GaAs Within a Molecular Beam Epitaxy System

1988 ◽  
Vol 129 ◽  
Author(s):  
P. A. Maki ◽  
D. J. Ehrlich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Excimer Laser ◽  
Pulse Rate ◽  
Molecular Beam ◽  
Gate Valve ◽  
High Vacuum ◽  
Laser Etching ◽  
Mbe Growth ◽  
Imaging Geometry

ABSTRACTWe have utilized an ArF excimer laser in a projection imaging geometry to etch GaAs layers grown in situ within a molecular beam epitaxy (MBE) system. Clean epitaxial surfaces were prepared using standard MBE growth procedures, then etched in a second chamber isolated by a gate valve. We report studies of the etching dependence on pulse rate (0.2 Hz to 150 Hz) and chlorine pressure (10−6, 10−4, and 5×10−3 Torr). We discuss the etching mechanism in terms of previous studies of the reaction between GaAs surfaces and molecular chlorine under high vacuum conditions. We show that the pulse rate and Cl2 pressure dependencies of the etching can be explained by the progress of the reaction at the instant of pulse exposure. Etch morphology is found to vary with the repetition rate, with the smoothest surfaces obtained at low repetition rates. We discuss the implications of the results in the context of in situ thin layer processing and epitaxial overgrowth.

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