Quality assessment of Bridgman-grown CdTe single crystals using double-crystal X-ray diffractometry (DCD) and synchrotron radiation

AbstractThe high intensity and large beam size of a synchrotron radiation source have been exploited in order to obtain double crystal X-ray topographs of whole 2in. and 3in. slices of semi-insulating LEC GaAs single crystals. Exposure times, typically 30 minutes for high resolution topographs, are at least one order of magnitude down on those required when using a conventional source. Variations in relative lattice parameter and lattice tilt have been measured as a function of position on the slice. The defect structure has been imaged and dislocations are seen in cellular configurations, slip bands and linear arrays (lineage), the latter of which are shown to be associated with small lattice tilts, typically 30”. The defect structure revealed on the topographs has been correlated with 1μm infrared absorption micrographs which are believed to represent the concentration of the dominant deep level EL2.

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Generation of Defects and Strain by Ion Implantation in Ge (100) Single Crystals, and in Pseudomorphic GexSi1-x Films Grown on Si (100)

MRS Proceedings ◽

10.1557/proc-262-1079 ◽

1992 ◽

Vol 262 ◽

Cited By ~ 7

Author(s):

D. Y. C. Lie ◽

A. Vantomme ◽

F. Eisen ◽

M. -A. Nicolet ◽

V. Arbet-Engels ◽

...

Keyword(s):

Ion Implantation ◽

Single Crystals ◽

Room Temperature ◽

Defect Concentration ◽

Double Crystal ◽

X Ray ◽

Positive Strain ◽

Independent Coefficient ◽

The Relationship ◽

Si Ion Implantation

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.

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Versatile double‐crystal fixed exit monochromator for x‐ray synchrotron radiation

Review of Scientific Instruments ◽

10.1063/1.1145840 ◽

1995 ◽

Vol 66 (2) ◽

pp. 1754-1756 ◽

Cited By ~ 3

Author(s):

Mohan Ramanathan ◽

Pedro A. Montano

Keyword(s):

Synchrotron Radiation ◽

Double Crystal ◽

X Ray

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High-resolution microdiffraction study of notch-tip deformation in Mo single crystals using x-ray synchrotron radiation

10.2172/10136532 ◽

1989 ◽

Author(s):

G. Ice ◽

A. Habenschuss ◽

J.C. Bilello ◽

R. Rebonato

Keyword(s):

High Resolution ◽

Synchrotron Radiation ◽

Single Crystals ◽

X Ray ◽

Notch Tip

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An accurate theory of X-ray coplanar multiple SRMS diffractometry

Acta Crystallographica Section A Foundations and Advances ◽

10.1107/s2053273318012615 ◽

2018 ◽

Vol 74 (6) ◽

pp. 673-680 ◽

Cited By ~ 1

Author(s):

V. G. Kohn

Keyword(s):

Synchrotron Radiation ◽

Plane Wave ◽

Experimental Setup ◽

Incident Plane Wave ◽

Instrumental Function ◽

Multiple Diffraction ◽

Double Crystal ◽

X Ray ◽

Double Crystal Monochromator ◽

Incident Plane

The article reports an accurate theory of X-ray coplanar multiple diffraction for an experimental setup that consists of a generic synchrotron radiation (SR) source, double-crystal monochromator (M) and slit (S). It is called for brevity the theory of X-ray coplanar multiple SRMS diffractometry. The theory takes into account the properties of synchrotron radiation as well as the features of diffraction of radiation in the monochromator crystals and the slit. It is shown that the angular and energy dependence (AED) of the sample reflectivity registered by a detector has the form of a convolution of the AED in the case of the monochromatic plane wave with the instrumental function which describes the angular and energy spectrum of radiation incident on the sample crystal. It is shown that such a scheme allows one to measure the rocking curves close to the case of the monochromatic incident plane wave, but only using the high-order reflections by monochromator crystals. The case of four-beam (220)(331)({\overline {11}}1) diffraction in Si is considered in detail.

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Graded X-ray Optics for Synchrotron Radiation Applications

Journal of Synchrotron Radiation ◽

10.1107/s0909049597019043 ◽

1998 ◽

Vol 5 (3) ◽

pp. 239-245 ◽

Cited By ~ 9

Author(s):

A. Erko ◽

M. Veldkamp ◽

W. Gudat ◽

N. V. Abrosimov ◽

S. N. Rossolenko ◽

...

Keyword(s):

Synchrotron Radiation ◽

Magnetron Sputtering ◽

Single Crystals ◽

Theoretical Data ◽

Lattice Parameter ◽

Structure And Properties ◽

Czochralski Technique ◽

Spectral Measurements ◽

Optical Elements ◽

X Ray

Using X-ray diffractometry and spectral measurements, the structure and properties of graded X-ray optical elements have been examined. Experimental and theoretical data on X-ray supermirrors, which were prepared by the magnetron sputtering technique using precise thickness control, are reported. Measurements on graded aperiodic Si1−x Ge x single crystals, which were grown by the Czochralski technique, are also presented. The lattice parameter of such a crystal changes almost linearly with increasing Ge concentration. The measurements indicate that Si1−x Ge x crystals with concentrations up to 7 at.% Ge can be grown with a quality comparable to that of pure Si crystals.

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Absolute measurement of lattice parameter in single crystals and epitaxic layers on a double-crystal X-ray diffractometer

Acta Crystallographica Section A Foundations of Crystallography ◽

10.1107/s0108767305004496 ◽

2005 ◽

Vol 61 (3) ◽

pp. 301-313 ◽

Cited By ~ 9

Author(s):

M. Fatemi

Keyword(s):

Single Crystals ◽

Absolute Measurement ◽

Lattice Parameter ◽

Double Crystal ◽

X Ray

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A method to stabilize the incident X-ray energy for anomalous diffraction measurements

Journal of Synchrotron Radiation ◽

10.1107/s1600577517006312 ◽

2017 ◽

Vol 24 (4) ◽

pp. 781-786

Author(s):

Wenjia Wang ◽

Xiaoyun Yang ◽

Guangcai Chang ◽

Pengfei An ◽

Kewen Cha ◽

...

Keyword(s):

Synchrotron Radiation ◽

Data Collection ◽

Absorption Edge ◽

Feedback Loop ◽

Inflection Point ◽

Single Crystal Diffraction ◽

Double Crystal ◽

Anomalous Diffraction ◽

X Ray ◽

Double Crystal Monochromator

A method to calibrate and stabilize the incident X-ray energy for anomalous diffraction data collection is provided and has been successfully used at the single-crystal diffraction beamline 1W2B at the Beijing Synchrotron Radiation Facilities. Employing a feedback loop to control the movement of the double-crystal monochromator, this new method enables the incident X-ray energy to be kept within a 0.2 eV range at the inflection point of the absorption edge.

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Domain Dynamics under Unipolar Electric Fields for BaTiO3 Single Crystals

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.582.40 ◽

2013 ◽

Vol 582 ◽

pp. 40-43

Author(s):

Shotaro Ishikawa ◽

Yuuki Kitanaka ◽

Yuji Noguchi ◽

Masaru Miyayama ◽

Chikako Moriyoshi ◽

...

Keyword(s):

Synchrotron Radiation ◽

Single Crystals ◽

Electric Fields ◽

Direct Evidence ◽

Reversible Change ◽

X Ray ◽

Domain Structures ◽

Diffraction Patterns ◽

Domain Dynamics

Domain structures and dynamics of BaTiO3 single crystals under in-situ electric fields along <110>c were investigated by using synchrotron radiation single-crystal X-ray diffractions. Diffraction patterns clearly show the presence of a 90 ° domain structure in the crystals poled along <110>c. The diffraction analysis provides direct evidence of a reversible change in the volume fractions of two kinds of the 90 o domains under unipolar in-situ electric fields. This reversible change in the domain structures under unipolar fields is suggested to originate from the interaction between spontaneous polarization and defect dipoles composed of acceptor and oxygen vacancy.

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