Luminescence, energy transfer and anti-Stokes PL in wide band-gap semimagnetic nanostructures

Nanoparticles of the wide band gap oxides doped with rare earth (RE) ions are prospective materials for application in optoelectronics as phosphors in a new generation of light sources. In this paper the mechanisms of the excitation of efficient 4f-4f intra-shell transitions in RE doped nanoparticles are discussed. These mechanisms either enhance the rate of host to impurity energy transfer or stimulate the intra-shell transitions of RE ions.

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Eu3+-activated CaGa2O4 wide band gap (WBG) material for solar blind UV conversion: fluorescence and photo-conductivity performance

Journal of Materials Chemistry C ◽

10.1039/c4tc00965g ◽

2014 ◽

Vol 2 (37) ◽

pp. 7918-7926 ◽

Cited By ~ 8

Author(s):

M. Rai ◽

S. K. Singh ◽

K. Mishra ◽

R. Shankar ◽

R. K. Srivastava ◽

...

Keyword(s):

Energy Transfer ◽

Band Gap ◽

Wide Band ◽

Defect States ◽

Energy Bands ◽

Wide Band Gap ◽

Schematic Representation ◽

Solar Blind ◽

Photo Conductivity

Schematic representation of energy bands/defect states, energy transfer and emission in Na+, Eu3+:CaGa2O4 usable for solar blind UV converter application.

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Luminescence of Doped Nanoparticles of Wide Band Gap II-VI Compounds

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.128.123 ◽

2007 ◽

Vol 128 ◽

pp. 123-134 ◽

Cited By ~ 4

Author(s):

M. Godlewski ◽

S. Yatsunenko ◽

M. Zalewska ◽

A. Kłonkowski ◽

Tomas Strachowski ◽

...

Keyword(s):

Energy Transfer ◽

Rare Earth ◽

Band Gap ◽

Light Emission ◽

Wide Band ◽

Medical Applications ◽

Al Doping ◽

Wide Band Gap ◽

Free Carriers ◽

Emission Enhancement

Nanoparticles of wide band gap II-VI compounds doped with transition metal (TM) or rare earth (RE) ions are perspective phosphor materials and fluorescence labels for optoelectronic, biology and medical applications. The efficiency of 3d-3d and 4f-4f intra-shell transitions is shown to be enhanced in TM, RE doped nanoparticles. Two mechanisms of emission enhancement related to spin dependent interactions of free carriers with impurities are discussed. These interactions enhance the TM, RE intra-shell transitions by increasing the rate of host to impurity energy transfer. It is shown also that Al doping increases the intensity of light emission from ZnO nanoparticles.

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Red organic light-emitting diodes based on wide band gap emitting material as the host utilizing two-step energy transfer

Semiconductor Science and Technology ◽

10.1088/0268-1242/23/3/035024 ◽

2008 ◽

Vol 23 (3) ◽

pp. 035024 ◽

Cited By ~ 9

Author(s):

Khizar-ul Haq ◽

Liu Shan-peng ◽

M A Khan ◽

X Y Jiang ◽

Z L Zhang ◽

...

Keyword(s):

Energy Transfer ◽

Band Gap ◽

Light Emitting Diodes ◽

Wide Band ◽

Organic Light Emitting Diodes ◽

Wide Band Gap ◽

Light Emitting ◽

Organic Light

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Unconventional energy transfer from narrow to broad luminescent wide band gap materials

EPL (Europhysics Letters) ◽

10.1209/0295-5075/127/17003 ◽

2019 ◽

Vol 127 (1) ◽

pp. 17003

Author(s):

Satish Laxman Shinde ◽

Thang Duy Dao ◽

Tadaaki Nagao ◽

Karuna Kar Nanda

Keyword(s):

Energy Transfer ◽

Band Gap ◽

Wide Band ◽

Wide Band Gap

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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