Low temperature time resolved photoluminescence of the 3.1 and 4.2 eV emission bands in Ge-doped silica

1997 ◽  
Vol 216 ◽  
pp. 19-25 ◽  
Author(s):  
A. Anedda ◽  
C.M. Carbonaro ◽  
R. Corpino ◽  
A. Serpi
Keyword(s):  
Low Temperature ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Temperature Time

Low temperature time resolved photoluminescence in ordered and disordered Cu2ZnSnS4 single crystals

2017 ◽  
Vol 508 ◽  
pp. 47-50 ◽  
Author(s):  
Taavi Raadik ◽  
Jüri Krustok ◽  
M. Kauk-Kuusik ◽  
K. Timmo ◽  
M. Grossberg ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Crystals ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Temperature Time

Low-temperature time-resolved photoluminescence in InGaN/GaN quantum wells

2002 ◽  
Vol 36 (6) ◽  
pp. 641-646 ◽  
Author(s):  
A. V. Andrianov ◽  
V. Yu. Nekrasov ◽  
N. M. Shmidt ◽  
E. E. Zavarin ◽  
A. S. Usikov ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Time Resolved ◽  
Time Resolved Photoluminescence ◽  
Temperature Time

Nitrogen function of aluminum-nitride codoped ZnO films deposited using cosputter system

2009 ◽  
Vol 24 (7) ◽  
pp. 2252-2258 ◽  
Author(s):  
Li-Wen Lai ◽  
Jheng-Tai Yan ◽  
Chia-Hsun Chen ◽  
Li-Ren Lou ◽  
Ching-Ting Lee
Keyword(s):  
Low Temperature ◽  
Oxygen Vacancies ◽  
Carrier Lifetime ◽  
Nitrogen Atmosphere ◽  
Zno Films ◽  
Deposition Condition ◽  
Time Resolved ◽  
Sapphire Substrates ◽  
Crystallographic Structures ◽  
Time Resolved Photoluminescence

AlN codoped ZnO films were deposited on sapphire substrates at low temperature using a cosputter system under various N2/(N2 + Ar) flow ratios. To investigate the nitrogen function, the ratio of nitrogen ambient was varied during cosputtering. AlN codoped ZnO films with various crystallographic structures and bonding configurations were measured. With an adequate nitrogen atmosphere deposition condition and postannealing temperature at 450 °C, the p-type conductive behaviors of AlN codoped ZnO films were achieved due to the formation of Zn–N bonds. According to the low-temperature photoluminescence spectra, the binding energy (EA) of 0.16 eV for N acceptors can be calculated. Using time-resolved photoluminescence measurement, the carrier lifetime in AlN codoped ZnO films increases due to the reduction of oxygen vacancies caused by the occupation of adequate nitrogen atoms.

Control of Spontaneous Emission from Colloidal Quantum Dots in a Polymer Microcavity

2006 ◽  
Vol 959 ◽  
Author(s):  
Vinod Menon ◽  
Nikesh Valappil ◽  
Iosef Zeylikovich ◽  
Taposh Gayen ◽  
Bidyut Das ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Spontaneous Emission ◽  
Defect Layer ◽  
Bragg Reflectors ◽  
Spontaneous Emission Rate ◽  
Time Resolved ◽  
One Dimensional ◽  
The One ◽  
Time Resolved Photoluminescence ◽  
Temperature Time

ABSTRACTWe report the fabrication of a one dimensional microcavity structure embedded with colloidal CdSe/ZnS core/shell quantum dots using solution processing. The microcavity structures were fabricated by spin coating alternating layers of polymers of different refractive indices (poly-vinylcarbazole, and poly-acrylic acid) to form the distributed Bragg reflectors (DBRs). Greater than 90% reflectivity was obtained using ten periods of the structure. The one dimensional microcavity was formed by sandwiching a λ/n thick defect layer between two such DBRs. The microcavity demonstrated directionality in emission and well behaved dispersion characteristics. Room temperature time-resolved photoluminescence measurements carried out on this structure showed six fold enhancement of spontaneous emission rate. The photoluminescence decay time of the quantum dots was found to be ∼ 1 ns while for the quantum dots embedded in the microcavity it was ∼150 ps.

Low-temperature time-resolved vacuum UV spectroscopy of NH4H2PO4 crystals

2004 ◽  
Vol 97 (2) ◽  
pp. 244-250 ◽  
Author(s):  
I. N. Ogorodnikov ◽  
V. A. Pustovarov ◽  
M. Kirm ◽  
V. S. Cheremnykh
Keyword(s):  
Low Temperature ◽  
Uv Spectroscopy ◽  
Time Resolved ◽  
Temperature Time ◽  
Vacuum Uv

Low-temperature time-resolved vacuum UV spectroscopy of potassium pentaborate crystals

2002 ◽  
Vol 92 (5) ◽  
pp. 702-709 ◽  
Author(s):  
I. N. Ogorodnikov ◽  
V. A. Pustovarov ◽  
M. Kirm ◽  
A. V. Kruzhalov ◽  
L. I. Isaenko
Keyword(s):  
Low Temperature ◽  
Uv Spectroscopy ◽  
Time Resolved ◽  
Temperature Time ◽  
Vacuum Uv

Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques

2006 ◽  
Vol 527-529 ◽  
pp. 461-464 ◽  
Author(s):  
Aurelie Thuaire ◽  
Anne Henry ◽  
Björn Magnusson ◽  
Peder Bergman ◽  
W.M. Chen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electronic Structure ◽  
Low Temperature ◽  
Deep Level ◽  
Temperature Dependent ◽  
Deep Level Defect ◽  
Time Resolved ◽  
Optical And Electronic Properties ◽  
Time Resolved Photoluminescence ◽  
Temperature Dependent Photoluminescence

A detailed investigation of the optical and electronic properties of the deep-level defect UD-4 is reported. This defect has recently been observed in 4H semi-insulating silicon carbide, but has hardly been studied yet. Both low temperature and temperature-dependent photoluminescence were collected from the defect. Zeeman spectroscopy measurements were performed as well as time-resolved photoluminescence.

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