Nonisothermal transport properties of α-Ag2 + δS: Partial thermopowers of electrons and ions, the soret effect and heats of transport

The proposed model allows to calculate the composition, thermodynamic and transport properties of the supercritical metal vapors within unified approach. The model includes atoms, immersed in jellium, and thermally ionized electrons and ions. The jellium is the part of the bound states electron density. The density of electron jellium increases with the compression of atomic gas and does not depend on temperature directly. At compression, the electrical conductivity passes through the minimum from the conductivity of thermal electrons to the conductivity of electrons of jellium accordingly. Calculations of the equation of state and the electrical conductivity of supercritical metal vapors agree well with physical and numerical experimental data.

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New transport properties of ferrocolloids: magnetic Soret effect and thermomagnetoosmosis

Journal of Magnetism and Magnetic Materials ◽

10.1016/j.jmmm.2004.11.070 ◽

2005 ◽

Vol 289 ◽

pp. 246-249 ◽

Cited By ~ 9

Author(s):

Elmars Blums

Keyword(s):

Transport Properties ◽

Soret Effect

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Spectroscopic Diagnostics of Tokamaks

International Astronomical Union Colloquium ◽

10.1017/s0252921100107638 ◽

1988 ◽

Vol 102 ◽

pp. 165-174

Author(s):

C. de Michelis

Keyword(s):

Transport Properties ◽

Power Losses ◽

Spectroscopic Diagnostics ◽

Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

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Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088816 ◽

1991 ◽

Vol 49 ◽

pp. 900-901 ◽

Cited By ~ 1

Author(s):

Alain Claverie ◽

Zuzanna Liliental-Weber

Keyword(s):

Transport Properties ◽

Layer Thickness ◽

Growth Temperature ◽

Low Temperatures ◽

Lattice Parameter ◽

Crystalline Quality ◽

Insulating Properties ◽

Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

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In situ irradiation effects studies in medium- and high-voltage TEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100137549 ◽

1995 ◽

Vol 53 ◽

pp. 234-235

Author(s):

Charles W. Allen

Keyword(s):

Cross Section ◽

Particle Flux ◽

Threshold Value ◽

High Energy ◽

Irradiation Damage ◽

Defect Complexes ◽

Lattice Position ◽

Electrons And Ions ◽

The Masses

With respect to structural consequences within a material, energetic electrons, above a threshold value of energy characteristic of a particular material, produce vacancy-interstial pairs (Frenkel pairs) by displacement of individual atoms, as illustrated for several materials in Table 1. Ion projectiles produce cascades of Frenkel pairs. Such displacement cascades result from high energy primary knock-on atoms which produce many secondary defects. These defects rearrange to form a variety of defect complexes on the time scale of tens of picoseconds following the primary displacement. A convenient measure of the extent of irradiation damage, both for electrons and ions, is the number of displacements per atom (dpa). 1 dpa means, on average, each atom in the irradiated region of material has been displaced once from its original lattice position. Displacement rate (dpa/s) is proportional to particle flux (cm-2s-1), the proportionality factor being the “displacement cross-section” σD (cm2). The cross-section σD depends mainly on the masses of target and projectile and on the kinetic energy of the projectile particle.

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The Basic Physical Principles of Ion, Electron, and X-Ray Detectors and Their Application to Microanalysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100117777 ◽

1985 ◽

Vol 43 ◽

pp. 154-157

Author(s):

A.J. Tousimis

Keyword(s):

Ion Beam ◽

Depth Resolution ◽

Sample Surface ◽

High Energy ◽

X Rays ◽

X Ray ◽

Electrons And Ions ◽

Spatial Depth ◽

Minimum Surface Area ◽

Physical Principles

An integral and of prime importance of any microtopography and microanalysis instrument system is its electron, x-ray and ion detector(s). The resolution and sensitivity of the electron microscope (TEM, SEM, STEM) and microanalyzers (SIMS and electron probe x-ray microanalyzers) are closely related to those of the sensing and recording devices incorporated with them.Table I lists characteristic sensitivities, minimum surface area and depth analyzed by various methods. Smaller ion, electron and x-ray beam diameters than those listed, are possible with currently available electromagnetic or electrostatic columns. Therefore, improvements in sensitivity and spatial/depth resolution of microanalysis will follow that of the detectors. In most of these methods, the sample surface is subjected to a stationary, line or raster scanning photon, electron or ion beam. The resultant radiation: photons (low energy) or high energy (x-rays), electrons and ions are detected and analyzed.

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Detector strategies for environmental scanning electron microscopy

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131115 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1296-1297

Author(s):

Klaus-Ruediger Peters

Keyword(s):

High Vacuum ◽

Environmental Scanning Electron Microscopy ◽

Charge Carriers ◽

Environmental Scanning ◽

Surface Information ◽

X Ray ◽

Detector Electrode ◽

Electrons And Ions ◽

Low Energy Electrons ◽

Environmental Sem

Environmental SEM operate at specimen chamber pressures of ∼20 torr (2.7 kPa) allowing stabilization of liquid water at room temperature, working on rugged insulators, and generation of an environmental secondary electron (ESE) signal. All signals available in conventional high vacuum instruments are also utilized in the environmental SEM, including BSE, SE, absorbed current, CL, and X-ray. In addition, the ESEM allows utilization of the flux of charge carriers as information, providing exciting new signal modes not available to BSE imaging or to conventional high vacuum SEM.In the ESEM, at low vacuum, SE electrons are collected with a “gaseous detector”. This detector collects low energy electrons (and ions) with biased wires or plates similar to those used in early high vacuum SEM for SE detection. The detector electrode can be integrated into the first PLA or positioned at any other place resulting in a versatile system that provides a variety of surface information.

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