On the frequency-dependent line admittance of VLSI interconnect lines on silicon-based semiconductor substrates

2002 ◽  
Vol 33 (5-6) ◽  
pp. 449-458 ◽  
Author(s):  
H. Ymeri ◽  
B. Nauwelaers ◽  
K. Maex
Keyword(s):  
Frequency Dependent ◽  
Semiconductor Substrates ◽  
Interconnect Lines ◽  
Silicon Based

Silicon-Based Floating-Body Synaptic Transistor With Frequency-Dependent Short- and Long-Term Memories

2016 ◽  
Vol 37 (3) ◽  
pp. 249-252 ◽  
Author(s):  
Hyungjin Kim ◽  
Jungjin Park ◽  
Min-Woo Kwon ◽  
Jong-Ho Lee ◽  
Byung-Gook Park
Keyword(s):  
Floating Body ◽  
Frequency Dependent ◽  
Short And Long Term ◽  
Silicon Based

The sandblasting use prospects in the semiconductor diodes production

2021 ◽  
pp. 339-344
Author(s):  
V.V. Zhukov ◽  
S.A. Stepanov
Keyword(s):  
Positive Result ◽  
Operating Parameters ◽  
Abrasive Powder ◽  
Domestic Enterprise ◽  
Semiconductor Substrates ◽  
Silicon Based

The process of manufacturing semiconductor components for the production of microwave diodes is considered. Scientifically based recommendations are presented for the separation of relatively thick, up to 1.5 mm, stacked silicon-based semiconductor substrates by the so-called sandblasting method, based on masking and pneumatic jet cutting of the substrate with micro abrasive powder. It is described the masking method and the principals of setting of the operating parameters of the packaged substrate jet processing, which were tested with a positive result on a pilot industrial sandblasting plant currently used by a domestic enterprise.

Analytical electron microscopy of grain boundaries in Al-Cu metallizations

1992 ◽  
Vol 50 (2) ◽  
pp. 1684-1685
Author(s):  
J. R. Michael ◽  
A. D. Romig ◽  
D. R. Frear
Keyword(s):  
Electron Microscopy ◽  
Integrated Circuits ◽  
Failure Mode ◽  
Current Density ◽  
Thermal History ◽  
Analytical Electron Microscopy ◽  
Cu Metallization ◽  
Analytical Electron ◽  
Interconnect Lines

Al with additions of Cu is commonly used as the conductor metallizations for integrated circuits, the Cu being added since it improves resistance to electromigration failure. As linewidths decrease to submicrometer dimensions, the current density carried by the interconnect increases dramatically and the probability of electromigration failure increases. To increase the robustness of the interconnect lines to this failure mode, an understanding of the mechanism by which Cu improves resistance to electromigration is needed. A number of theories have been proposed to account for role of Cu on electromigration behavior and many of the theories are dependent of the elemental Cu distribution in the interconnect line. However, there is an incomplete understanding of the distribution of Cu within the Al interconnect as a function of thermal history. In order to understand the role of Cu in reducing electromigration failures better, it is important to characterize the Cu distribution within the microstructure of the Al-Cu metallization.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Preceding Stimulus Frequency-Dependent Potentiation of the Postrest Shortening of the Action Potential Duration in Rabbits.

2000 ◽  
Vol 41 (4) ◽  
pp. 481-492
Author(s):  
Naohiko Takahashi ◽  
Morio Ito ◽  
Shuji Ishida ◽  
Takao Fujino ◽  
Mikiko Nakagawa ◽  
...  
Keyword(s):  
Action Potential ◽  
Action Potential Duration ◽  
Stimulus Frequency ◽  
Frequency Dependent ◽  
Preceding Stimulus
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