The sandblasting use prospects in the semiconductor diodes production

2021 ◽  
pp. 339-344
Author(s):  
V.V. Zhukov ◽  
S.A. Stepanov
Keyword(s):  
Positive Result ◽  
Operating Parameters ◽  
Abrasive Powder ◽  
Domestic Enterprise ◽  
Semiconductor Substrates ◽  
Silicon Based

The process of manufacturing semiconductor components for the production of microwave diodes is considered. Scientifically based recommendations are presented for the separation of relatively thick, up to 1.5 mm, stacked silicon-based semiconductor substrates by the so-called sandblasting method, based on masking and pneumatic jet cutting of the substrate with micro abrasive powder. It is described the masking method and the principals of setting of the operating parameters of the packaged substrate jet processing, which were tested with a positive result on a pilot industrial sandblasting plant currently used by a domestic enterprise.

Application of Improved Voltage Compensation in the SEM to Imaging of Organic Materials

1973 ◽  
Vol 31 ◽  
pp. 444-445
Author(s):  
P.J. Killingworth ◽  
M. Warren
Keyword(s):  
Electron Beam ◽  
Organic Materials ◽  
Operating Parameters ◽  
Low Density ◽  
Beam Diameter ◽  
Incident Electron Beam ◽  
Specimen Material ◽  
Voltage Compensation ◽  
Selection Of ◽  
Scanning Electron

Ultimate resolution in the scanning electron microscope is determined not only by the diameter of the incident electron beam, but by interaction of that beam with the specimen material. Generally, while minimum beam diameter diminishes with increasing voltage, due to the reduced effect of aberration component and magnetic interference, the excited volume within the sample increases with electron energy. Thus, for any given material and imaging signal, there is an optimum volt age to achieve best resolution.In the case of organic materials, which are in general of low density and electric ally non-conducting; and may in addition be susceptible to radiation and heat damage, the selection of correct operating parameters is extremely critical and is achiev ed by interative adjustment.

Electron sources: Past, present, and future

1993 ◽  
Vol 51 ◽  
pp. 764-765
Author(s):  
David C Joy
Keyword(s):  
Glass Tube ◽  
Source Size ◽  
Electron Gun ◽  
Operating Parameters ◽  
Operational Parameters ◽  
Electron Sources ◽  
Difficult Decision ◽  
Probe Size ◽  
Wide Range ◽  
Overall Performance

The electron source is the most important component of the Scanning electron microscope (SEM) since it is this which will determine the overall performance of the machine. The gun performance can be described in terms of quantities such as its brightness, its source size, its energy spread, and its stability and, depending on the chosen application, any of these factors may be the most significant one. The task of the electron gun in an SEM is, in fact, particularly difficult because of the very wide range of operational parameters that may be required e.g a variation in probe size of from a few angstroms to a few microns, and a probe current which may go from less than a pico-amp to more than a microamp. This wide range of operating parameters makes the choice of the optimum source for scanning microscopy a difficult decision.Historically, the first step up from the sealed glass tube ‘cathode ray generator’ was the simple, diode, tungsten thermionic emitter.

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

Low Power Pixel-Level ADC Readout Circuit for an Amorphous Silicon-Based Microbolometer

2009 ◽  
Vol E92-C (5) ◽  
pp. 708-712
Author(s):  
Dong-Heon HA ◽  
Chi Ho HWANG ◽  
Yong Soo LEE ◽  
Hee Chul LEE
Keyword(s):  
Low Power ◽  
Amorphous Silicon ◽  
Readout Circuit ◽  
Silicon Based
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