Cross-talk in electric force microscopy testing of parallel sub-micrometer conducting lines

2000 ◽  
Vol 40 (8-10) ◽  
pp. 1401-1406 ◽  
Author(s):  
U. Behnke ◽  
W. Mertin ◽  
E. Kubalek
Keyword(s):  
Cross Talk ◽  
Electric Force ◽  
Force Microscopy ◽  
Electric Force Microscopy

scholarly journals The Role of Nanoparticles on Topographic Cross‐Talk in Electric Force Microscopy and Magnetic Force Microscopy

2020 ◽  
Vol 217 (13) ◽  
pp. 1900828 ◽  
Author(s):  
Marc Fuhrmann ◽  
Alexander Krivcov ◽  
Anna Musyanovych ◽  
Ronald Thoelen ◽  
Hildegard Möbius
Keyword(s):  
Cross Talk ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Electric Force ◽  
Force Microscopy ◽  
Electric Force Microscopy

Sub-10 nm spatial resolution for electrical properties measurements using bimodal excitation in electric force microscopy

2021 ◽  
Vol 92 (2) ◽  
pp. 023703
Author(s):  
Khaled Kaja ◽  
Denis Mariolle ◽  
Nicolas Chevalier ◽  
Adnan Naja ◽  
Mustapha Jouiad
Keyword(s):  
Electrical Properties ◽  
Spatial Resolution ◽  
Electric Force ◽  
Force Microscopy ◽  
Electric Force Microscopy

Subsurface characterization of carbon nanotubes in polymer composites via quantitative electric force microscopy

2010 ◽  
Vol 21 (22) ◽  
pp. 225702 ◽  
Author(s):  
Minhua Zhao ◽  
Xiaohong Gu ◽  
Sharon E Lowther ◽  
Cheol Park ◽  
Y C Jean ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Polymer Composites ◽  
Electric Force ◽  
Force Microscopy ◽  
Subsurface Characterization ◽  
Electric Force Microscopy

scholarly journals Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

2004 ◽  
Vol 84 (16) ◽  
pp. 3070-3072 ◽  
Author(s):  
Sang-Jun Cho ◽  
Seydi Doğan ◽  
Shahriar Sabuktagin ◽  
Michael A. Reshchikov ◽  
Daniel K. Johnstone ◽  
...  
Keyword(s):  
Surface Potential ◽  
Electric Force ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Electric Force Microscopy

Characterization of Inversion Domains in GaN by Electric Force Microscopy in Conjunction with Transmission Electron Microscopy and Wet Chemical Etching

2001 ◽  
Vol 680 ◽  
Author(s):  
F. Yun ◽  
P. Visconti ◽  
K. M. Jones ◽  
A. A. Baski ◽  
H. Morkoç ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Control Sample ◽  
Chemical Vapor ◽  
Dark Field ◽  
Electric Force ◽  
Contact Potential ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Electric Force Microscopy

ABSTRACTInversion domains (IDs) in III-nitride semiconductors degrade the performance of such devices, and so their identification and elimination is critical.An inversion domain on a Ga- polarity samples appears as an N-polarity domain, which has a polarization reversed with respect to the rest of the surface and therefore has a different surface potential. Surface-contact-potential electric force microscopy (SCP-EFM) is an extension of atomic force microscopy (AFM) that allows imaging of the surface electrostatic potential. Previously, we established the particular mode of operation necessary to identify inversion domains on III-nitrides using a control sample. We have now studied inversion domains in GaN films grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). The existence of inversion domains was also verified by transmission electron microscopy (TEM) using multiple dark field imaging. In MOCVD grown GaN, we found predominant Ga-polarity with very low density of IDs, while in the MBE GaN, a mix polarity feature was identified.

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