Effect of Sputtering Power on the Properties of Transparent Conducting Ti-Al Co-Doped Zine Oxide Films Prepared by DC Magnetron Sputtering

Transparent conducting Ti-Al co-doped zinc oxide films (TAZO) with high transparency and relatively low resistivity have been successfully prepared by direct current magnetron sputtering. The effect of sputtering power on the structural, optical, and electrical properties of Ti-Al co-doped films were investigated. The XRD patterns show that the thin films were highly textured along the c-axis and perpendicular to the surface of the substrate. The electrical resistivity decreases when the sputtering power increases from 40W to 120W. When the sputtering power is 120w and the target-substrate distance is 60mm, it is obtained that the lowest resistivity is 3.23×10-4Ω·cm.The lowest stress is 0.864Gpa in all the deposited films. All the films present a high transmittance of above 91% in the visible range.

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The Effect of Sputtering Power on the Properties of Zr-Ga Co-Doped ZnO Films by DC Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.680.75 ◽

2013 ◽

Vol 680 ◽

pp. 75-80

Author(s):

Xiao Li Wu ◽

Hui Wang ◽

Yu Zhen Yuan

Keyword(s):

Magnetron Sputtering ◽

Visible Range ◽

Zno Films ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

Glass Substrates ◽

Conductive Films ◽

Sputtering Power ◽

Doped Zno ◽

Co Doped

Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω﹒cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (3.34 eV).

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Transparent Conducting Boron-Doped Zinc Oxide Films Deposited by DC-Magnetron Sputtering in $\bf B_{2}H_{6}\mbox{-}Ar$ Mixtures

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.3623 ◽

1995 ◽

Vol 34 (Part 1, No. 7A) ◽

pp. 3623-3627 ◽

Cited By ~ 24

Author(s):

Tokio Nakada ◽

Yukiyasu Ohkubo ◽

Naoki Murakami ◽

Akio Kunioka

Keyword(s):

Zinc Oxide ◽

Magnetron Sputtering ◽

Oxide Films ◽

Dc Magnetron Sputtering ◽

Zinc Oxide Films ◽

Boron Doped ◽

Transparent Conducting

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Influence of the Sputtering Pressure on the Properties of TAZO Films Prepared by DC Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.663-665.1045 ◽

2010 ◽

Vol 663-665 ◽

pp. 1045-1048

Author(s):

Han Fa Liu ◽

Chang Kun Yuan

Keyword(s):

Electrical Resistivity ◽

Magnetron Sputtering ◽

Visible Region ◽

Hexagonal Structure ◽

Dc Magnetron Sputtering ◽

Zinc Oxide Films ◽

Transparent Conducting ◽

Average Transmittance ◽

Sputtering Pressure ◽

Deposited Films

Transparent conducting Ti-Al co-doped zinc oxide films (TGZO) with high transparency and relatively low resistivity have been successfully prepared on water-cooled glass substrate by DC magnetron sputtering at room temperature. All the deposited films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The Ar sputtering pressure was varied from 1.5 to 13 Pa. The electrical resistivity decreases when the sputtering pressure increases from 1.5 to 7.5 Pa. The electrical resistivity increases when the sputtering pressure increases from 7.5 to 13 Pa. When the sputtering pressure is 7.5 Pa, it is obtained that the lowest resistivity is 2.18×10-4Ω⋅cm. In the visible region, all the deposited films show a high average transmittance of above 92 %.

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