Deep-level transient spectroscopy (DLTS) of CdS/CuIn1−xGaxSe2-based solar cells prepared from electroplated and auto-plated precursors, and by physical vapor deposition

2001 ◽  
Vol 384 (1) ◽  
pp. 65-68 ◽  
Author(s):  
R.N. Bhattacharya ◽  
A. Balcioglu ◽  
K. Ramanathan
Keyword(s):  
Solar Cells ◽  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Physical Vapor Deposition ◽  
Deep Level ◽  
Transient Spectroscopy

Electrically Active Deep Levels in ScN

2001 ◽  
Vol 699 ◽  
Author(s):  
Florentina Perjeru ◽  
Xuewen Bai ◽  
Martin E. Kordesch
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Physical Vapor Deposition ◽  
Deep Level ◽  
Reactive Sputtering ◽  
Deep Levels ◽  
Si Substrates ◽  
Transient Spectroscopy

AbstractWe report the electronic characterization of n-ScN in ScN-Si heterojunctions using Deep Level Transient Spectroscopy of electrically active deep levels. ScN material was grown by plasma assisted physical vapor deposition and by reactive sputtering on commercial p+ Si substrates. Deep level transient spectroscopy of the junction grown by plasma assisted physical vapor deposition shows the presence of an electronic trap with activation energy EC-ET= 0.51 eV. The trap has a higher concentration (1.2–1.6 1013cm−3) closer to the ScN/Si interface. Junctions grown by sputtering also have an electronic trap, situated at about EC-ET= 0.90 eV.

Properties of the EL2 Level in Organometallic Ga1−xAlxAs

1987 ◽  
Vol 104 ◽  
Author(s):  
A. Ben Cherifa ◽  
R. Azoulay ◽  
G. Guillot
Keyword(s):  
Vapor Deposition ◽  
Deep Level Transient Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Quenching Effect ◽  
Deep Electron Trap ◽  
Transient Spectroscopy ◽  
First Time

ABSTRACTWe have studied by means of deep level transient spectroscopy and photocapacitance measurements deep electron traps in undoped Ga1−xAlxAs of n-type grown by metalorganic chemical vapor deposition with 0≤x≤ 0.3. A dominant deep electron trap is detected in the series of alloys. Its activation energy is found at EC-0.8 eV in GaAs and it increases with x. Its concentration is found nearly independent of x. For the first time we observed for this level in the Ga1−xAlxAs alloys, the photocapacitance quenching effect typical for the EL2 defect in GaAs thus confirming clearly that EL2 is also created in MOCVD Ga1−xAlxAs.

Probing the trap states in N–i–P Sb2(S,Se)3 solar cells by deep-level transient spectroscopy

2020 ◽  
Vol 153 (12) ◽  
pp. 124703
Author(s):  
Weitao Lian ◽  
Rongfeng Tang ◽  
Yuyuan Ma ◽  
Chunyan Wu ◽  
Chao Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Trap States ◽  
Transient Spectroscopy

Defect levels in Cu2ZnSn(SxSe1−x)4 solar cells probed by current-mode deep level transient spectroscopy

2014 ◽  
Vol 104 (19) ◽  
pp. 192106 ◽  
Author(s):  
Sandip Das ◽  
Sandeep K. Chaudhuri ◽  
Raghu N. Bhattacharya ◽  
Krishna C. Mandal
Keyword(s):  
Solar Cells ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Current Mode ◽  
Defect Levels ◽  
Transient Spectroscopy
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