Electrically Active Deep Levels in ScN

Physical Vapor Deposition ◽

Deep Level ◽

Reactive Sputtering ◽

Deep Levels ◽

Si Substrates ◽

AbstractWe report the electronic characterization of n-ScN in ScN-Si heterojunctions using Deep Level Transient Spectroscopy of electrically active deep levels. ScN material was grown by plasma assisted physical vapor deposition and by reactive sputtering on commercial p+ Si substrates. Deep level transient spectroscopy of the junction grown by plasma assisted physical vapor deposition shows the presence of an electronic trap with activation energy EC-ET= 0.51 eV. The trap has a higher concentration (1.2–1.6 1013cm−3) closer to the ScN/Si interface. Junctions grown by sputtering also have an electronic trap, situated at about EC-ET= 0.90 eV.

Characterization of deep levels in high electron mobility transistor by conductance deep level transient spectroscopy

Materials Science and Engineering C ◽

10.1016/j.msec.2007.10.068 ◽

2008 ◽

Vol 28 (5-6) ◽

pp. 787-790 ◽

Cited By ~ 13

Author(s):

M. Gassoumi ◽

J.M. Bluet ◽

G. Guillot ◽

C. Gaquière ◽

H. Maaref

Keyword(s):

Electron Mobility ◽

Deep Level ◽

High Electron Mobility Transistor ◽

Deep Levels ◽

High Electron ◽

High Electron Mobility ◽

Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.381 ◽

2009 ◽

Vol 615-617 ◽

pp. 381-384 ◽

Cited By ~ 1

Author(s):

Masashi Kato ◽

Kosuke Kito ◽

Masaya Ichimura

Keyword(s):

Temperature Dependence ◽

Room Temperature ◽

Deep Level ◽

Deep Levels ◽

Donor Level ◽

Acceptor Level ◽

Transient Spectroscopy ◽

Lower Resistivity

We measured the temperature dependence of the electrical resistivity for two high-purity undoped 6H-SiC bulk wafers with resistivities of 1.5103 cm and 8.3108 cm at room temperature. We also characterized the deep levels affecting the semi-insulating property by current deep level transient spectroscopy (I-DLTS) and photo induced current level transient spectroscopy (PICTS) measurements. The activation energies of the resistivity were 0.11 eV and 0.59 eV for the samples with lower and higher resistivities, respectively. In I-DLTS and PICTS spectra, the sample with lower resistivity shows a donor level at Ec0.17 eV and two acceptor levels around Ec0.40 eV, while the sample with higher resistivity shows acceptor levels at Ec0.77 eV and Ev+0.46 eV. We calculated the temperature dependence of the resistivity with a model considering one donor level and one acceptor level based on parameters from I-DLTS peaks. We reproduced the experimental results only for the sample with lower resistivity. The acceptor level near the valence band needs to be considered to explain the resistivity for the sample with higher resistivity.

Deep-level transient spectroscopy (DLTS) of CdS/CuIn1−xGaxSe2-based solar cells prepared from electroplated and auto-plated precursors, and by physical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(00)01817-4 ◽

2001 ◽

Vol 384 (1) ◽

pp. 65-68 ◽

Cited By ~ 8

Author(s):

R.N. Bhattacharya ◽

A. Balcioglu ◽

K. Ramanathan

Keyword(s):

Solar Cells ◽

Vapor Deposition ◽

Physical Vapor Deposition ◽

Deep Level ◽

Cathodoluminescence mapping, deep‐level transient spectroscopy, and electron‐beam‐induced current measurements on GaAs layers grown on Si substrates by metalorganic chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.344047 ◽

1989 ◽

Vol 66 (8) ◽

pp. 3831-3838 ◽

Cited By ~ 2

Author(s):

A. C. Papadopoulo ◽

J. F. Bresse ◽

R. Legros ◽

R. Azoulay ◽

N. Draidia ◽

...

Keyword(s):

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Deep Level ◽

Chemical Vapor ◽

Induced Current ◽

Si Substrates ◽

Electron Beam Induced Current ◽

Transient Spectroscopy ◽

Metalorganic Chemical

Deep level transient spectroscopy characterization of tungsten‐related deep levels in silicon

Journal of Applied Physics ◽

10.1063/1.347708 ◽

1991 ◽

Vol 69 (1) ◽

pp. 278-283 ◽

Cited By ~ 22

Author(s):

S. Boughaba ◽

D. Mathiot

Keyword(s):

Deep Level ◽

Deep Levels ◽

Characterization of HgCdTe Diodes on Si Substrates Using Temperature-Dependent Current-Voltage Measurements and Deep Level Transient Spectroscopy

Journal of Electronic Materials ◽

10.1007/s11664-007-0104-x ◽

2007 ◽

Vol 36 (8) ◽

pp. 832-836

Author(s):

D. Johnstone ◽

T.D. Golding ◽

R. Hellmer ◽

J.H. Dinan ◽

M. Carmody

Keyword(s):

Deep Level ◽

Temperature Dependent ◽

Si Substrates ◽

Current Voltage ◽

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

EXPERIMENTAL VERIFICATION OF DLTS MODELS

10.30987/conferencearticle_5e028210b72ba9.48046910 ◽

2019 ◽

Author(s):

Nataliya Mitina ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Data Processing ◽

Experimental Verification ◽

Deep Level ◽

Deep Levels ◽

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.