Influences of annealing temperature on the optical and structural properties of (Ba,Sr)TiO3 thin films derived from sol–gel technique

2002 ◽  
Vol 408 (1-2) ◽  
pp. 200-205 ◽  
Author(s):  
Hu-Yong Tian ◽  
Wei-Gen Luo ◽  
Ai-Li Ding ◽  
Jongwan Choi ◽  
Changho Lee ◽  
...  
2013 ◽  
Vol 548 ◽  
pp. 7-12 ◽  
Author(s):  
Linhua Xu ◽  
Jing Su ◽  
Yulin Chen ◽  
Gaige Zheng ◽  
Shixin Pei ◽  
...  

2014 ◽  
Vol 602-603 ◽  
pp. 767-770 ◽  
Author(s):  
Ching Fang Tseng ◽  
Chiu Yun Chen ◽  
Pei Wen Huang

Dielectric properties and microstructures of ZrO2thin films prepared by the sol-gel method at different annealing temperatures have been investigated. All films exhibited ZrO2(111) highly orientation perpendicular to the substrate surface and the grain size increased with increasing annealing temperature. Dielectric properties of the Ag/ZrO2/Ag/Si structure were measured by using HP 4192 Impedance Analyzer and Agilent 4155 Semiconductor Parameter Analyzer. The dependence of the microstructure and dielectric characteristics on annealing temperature was also investigated.


2007 ◽  
Vol 336-338 ◽  
pp. 69-72 ◽  
Author(s):  
Xue Feng Ma ◽  
Shu Bin Wang ◽  
Yue Zhang

Epitaxial MgO thin films were deposited on Si(100) substrate by atmospheric-pressure metalorganic chemical vapor deposition for using as buffer layers. Ba0.6Sr0.4TiO3 thin films were prepared on MgO/Si(100) substrate by sol-gel technique. The independence of crystallinity on annealing temperature was investigated. The Ba0.6Sr0.4TiO3 (BST) thin films are crystallized in preferential (100) orientation after post-deposition annealing at 850°C and 950°C for 2h in air, respectively. Rutherford backscattering spectroscopy analysis confirmed that both the BST and MgO films have stoichiometric composition.


2011 ◽  
Vol 59 (2) ◽  
pp. 327-333 ◽  
Author(s):  
Nursen Avci ◽  
Philippe F. Smet ◽  
Johan Lauwaert ◽  
Henk Vrielinck ◽  
Dirk Poelman

2005 ◽  
Vol 12 (05n06) ◽  
pp. 793-797 ◽  
Author(s):  
F. E. GHODSI ◽  
M. MAFAKHERI ◽  
A. NOVINROOZ

Thin films of Al 2 O 3 were prepared by the sol–gel process. Dip-coating technique was used for deposition of the Al 2 O 3 thin films onto glass substrates. Optical and structural properties of the films were investigated with respect to the annealing temperature (100–500°C). The structure of these films was determined by X-ray diffraction (XRD). Scanning electron microscopy (SEM) was performed for the analysis of surface morphology. For determination of the optical constants of Al 2 O 3 thin films, UV-Visible spectrophotometry measurements were carried out. Annealing temperature affects the structural and optical properties of the Al 2 O 3 thin films. The refractive index and extinction coefficient of the films at 550 nm wavelength increase from 1.56 to 1.66, and from 3.41 × 10-5 to 5.54 × 10-5, respectively while optical band gap and thickness of the films decrease from 4.15 eV to 4.11 eV, and 360 nm to 260 nm, respectively, by increasing annealing temperature from 100°C to 500°C.


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