Indium–tin-oxide thin film prepared by microwave-enhanced d.c. reactive magnetron sputtering for telecommunication wavelengths

2002 ◽  
Vol 422 (1-2) ◽  
pp. 80-86 ◽  
Author(s):  
Li-Jian Meng ◽  
Eddie Crossan ◽  
Andrei Voronov ◽  
Frank Placido
Author(s):  
Xiao Di Liu ◽  
Dacheng Zhang

Nanosized tin oxide thin films were fabricated on silicon and quartz glass substrates by direct current reactive magnetron sputtering method, and then were calcined at different temperatures ranging from 400°C to 900°C. The results analyzed by X ray photoemission spectra (XPS), scanning electron microscope (SEM), Spectroscopic ellipsometer, Powder X-ray diffraction (XRD), and HP4145B semiconductor parameter analyzer measurements show that the sample with quartz glass substrate and calcinated at 650°C possesses better properties and suitable to be used in our gas sensor.


2001 ◽  
Vol 206-213 ◽  
pp. 507-510
Author(s):  
Jow Lay Huang ◽  
Bao-Shun Yau ◽  
Su Shia Lin ◽  
Ding-Fwu Lii

1997 ◽  
Vol 36 (Part 1, No. 7B) ◽  
pp. 4922-4927 ◽  
Author(s):  
Yoshinobu Matsuda ◽  
Yasunari Yamori ◽  
Madoka Muta ◽  
Shinichi Ohgushi ◽  
Hiroshi Fujiyama

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