In-situ CdCl2 treatment in CdTe films synthesized by rapid thermal annealing technique

Vacuum ◽  
1998 ◽  
Vol 49 (4) ◽  
pp. 303-308 ◽  
Author(s):  
R Chakraborty ◽  
S Bandyopadhyaya ◽  
S Chaudhuri ◽  
AK Pal
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Cdcl2 Treatment ◽  
Cdte Films

In-Situ Rapid Thermal Annealing of Heterostructures Grown by Molecular Beam Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
M. Cerullo ◽  
Julia M. Phillips ◽  
M. Anzlowar ◽  
L. Pfeiffer ◽  
J. L. Batstone ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Molecular Beam ◽  
High Vacuum ◽  
Processing Technique ◽  
Ultra High Vacuum ◽  
On Line ◽  
High Vacuum Environment

ABSTRACTA new in-situ rapid thermal annealing (RTA) apparatus which can be used to anneal entire wafers in an ultra high vacuum environment has been designed to be used in conjunction with the epitaxial growth of heterostructures. Drastic improvement in the crystallinity of CaF2/Si(100) can be achieved with RTA, and our results suggest that RTA can be used as an on-line processing technique for novel epitaxial structures.

Characterization of CdTe films with in situ CdCl2 treatment grown by a simple vapor phase deposition technique

2009 ◽  
Vol 255 (15) ◽  
pp. 7012-7016 ◽  
Author(s):  
Araceli Rios Flores ◽  
R. Castro-Rodríguez ◽  
J.L. Peña ◽  
N. Romeo ◽  
A. Bosio
Keyword(s):  
Vapor Phase ◽  
Deposition Technique ◽  
Vapor Phase Deposition ◽  
Cdcl2 Treatment ◽  
Cdte Films

In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure

2000 ◽  
Vol 76 (18) ◽  
pp. 2538-2540 ◽  
Author(s):  
Byung Hak Lee ◽  
Kee Sun Lee ◽  
Dong Kyun Sohn ◽  
Jeong Soo Byun ◽  
Chang Hee Han ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Tungsten Nitride ◽  
Silicon Structure ◽  
Barrier Formation

The TEOS CVD oxide deposited on phosphorus in situ doped polysilicon with rapid thermal annealing

1997 ◽  
Vol 18 (11) ◽  
pp. 526-528 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
Chung Len Lee
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing

Formation of W/HfO2/Si gate structures using in situ magnetron sputtering and rapid thermal annealing

2014 ◽  
Vol 59 (5) ◽  
pp. 711-715 ◽  
Author(s):  
E. A. Bogoyavlenskaya ◽  
V. I. Rudakov ◽  
Yu. I. Denisenko ◽  
V. V. Naumov ◽  
A. E. Rogozhin
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing

Dislocation sources and slip band nucleation from indents on silicon wafers

2010 ◽  
Vol 43 (5) ◽  
pp. 1036-1039 ◽  
Author(s):  
J. Wittge ◽  
A. N. Danilewsky ◽  
D. Allen ◽  
P. McNally ◽  
Z. Li ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Slip Band ◽  
Rapid Thermal Annealing ◽  
Line Tension ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffraction Imaging ◽  
Dislocation Sources ◽  
Nucleation Of Dislocations

The nucleation of dislocations at controlled indents in silicon during rapid thermal annealing has been studied byin situX-ray diffraction imaging (topography). Concentric loops extending over pairs of inclined {111} planes were formed, the velocities of the inclined and parallel segments being almost equal. Following loss of the screw segment from the wafer, the velocity of the inclined segments almost doubled, owing to removal of the line tension of the screw segments. The loops acted as obstacles to slip band propagation.

In-Situ resistance Measurements During Rapid Thermal Annealing for Process Characterization

1995 ◽  
Vol 387 ◽  
Author(s):  
E. G. Colgan ◽  
C. Cabral ◽  
L. A. Clevenger ◽  
J. M. E. Harper
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Phase ◽  
Heating Rates ◽  
Process Characterization ◽  
Process Learning ◽  
Silicon Structures ◽  
The Stability ◽  
Kinetics Of

AbstractMeasurement of resistance in-situ during rapid thermal annealing is a powerful technique for process characterization and optimization. A major advantage of in-situ resistance measurements is the very rapid process learning. With silicides, in-situ resistance measurements can quickly determine an appropriate thermal process in which a low resistance silicide phase is formed without the agglomeration or inversion of silicide/polycrystalline silicon structures. One example is an optimized two step anneal for CoSi2 formation which was developed in less than one day. Examples of process characterization include determining the phase formation kinetics of TiSi2 (C49 and C54), Co2Si, and CoSi2 using in-situ ramped resistance measurements. The stability of TiSi2 or CoSi2/poly-Si structures has also been characterized by isothermal measurements. Resistance measurements have been made at heating rates from 1 to 100°C/s and temperatures up to 1000°C. The sample temperature was calibrated by melting Ag, Al, or Au/Si eutectics.

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