Chapter 1 MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based II-VI Semiconductors

AbstractWe present a theoretical study of atomic structures, electrical properties and formation energies for a variety of possible reconstructions with 1×1 and 2×2 periodicity of the GaN(0001) and (0001) surfaces. We find that during MBE growth in the (0001) direction 2×2 structures become stable under N rich growth conditions while Ga rich environment should yield structures with 1×1 periodicity. Considering MBE growth on (0001) surfaces, among the investigated structures only those with 1×1 periodicity are predicted to be stable. During MOCVD growth, where H terminated surfaces may occur, only structures with lx1 periodicity are found to be stable for both growth directions.

Download Full-text

High-κ Dielectrics for 4H-Silicon Carbide: Present Status and Future Perspective

Journal of Materials Chemistry C ◽

10.1039/d0tc05008c ◽

2021 ◽

Author(s):

Amna Siddiqui ◽

Rabia Yasmin Khosa ◽

Muhammad Usman

Keyword(s):

Silicon Carbide ◽

High Temperature ◽

Electrical Properties ◽

Electric Field ◽

High Power ◽

Present Status ◽

Wide Bandgap ◽

Future Perspective ◽

Breakdown Electric Field ◽

High Breakdown Electric Field

Owing to its superior material and electrical properties such as wide bandgap and high breakdown electric field, 4H-silicon carbide (4H-SiC) has shown promise in high power, high temperature, and radiation...

Download Full-text

Optical and electrical properties of III-V nitride wide bandgap semiconductors. Annual report, April 1, 1997--May 31, 1998

10.2172/623016 ◽

1998 ◽

Author(s):

Keyword(s):

Electrical Properties ◽

Annual Report ◽

Wide Bandgap ◽

Optical And Electrical Properties ◽

Wide Bandgap Semiconductors ◽

Bandgap Semiconductors

Download Full-text

Properties of Modulation-Doped HgCdTe Superlattices

MRS Proceedings ◽

10.1557/proc-161-263 ◽

1989 ◽

Vol 161 ◽

Cited By ~ 1

Author(s):

S. Hwang ◽

Z. Yang ◽

Y. Lansari ◽

J.W. Han ◽

J.W. Cook ◽

...

Keyword(s):

Electrical Properties ◽

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Optical And Electrical Properties ◽

Mbe Growth ◽

Quantum Well Structures ◽

P Type ◽

Growth Experiments

ABSTRACTPhotoassisted molecular beam epitaxy has been employed to successfully prepare p-type and n-type modulation-doped HgCdTe superlattices. The samples were grown at 170°C. In this paper, we report details of the MBE growth experiments and describe the optical and electrical properties that these new multilayered quantum well structures of HgCdTe possess.

Download Full-text