GaAs surface passivation using in-situ oxide deposition

AbstractSurface passivation of unpassivated Al nanoparticles has been realized using self assembled monolayers (SAMs). Nanoscale Al particles were prepared in solution by catalytic decomposition of H3Al•NMe3 or H3Al•N(Me)Pyr by Ti(OiPr)4 and coated in situ using a perfluoroalkyl carboxylic acid SAM. Because the Al particles are prepared using wet chemistry techniques and coated in solution, they are free of oxygen passivation. This SAM coating passivates the aluminum and seems to prevent the oxidation of the particles in air and renders the composite material, to some extent, soluble in polar organic solvents such as diethyl ether. Characterization data including SEM, TEM, TGA, and ATR-FTIR of prepared materials is presented.

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C-V and G-V characterization of in-situ fabricated Ga2O3GaAs interfaces for inversion/accumulation device and surface passivation applications

Solid-State Electronics ◽

10.1016/0038-1101(96)00006-8 ◽

1996 ◽

Vol 39 (8) ◽

pp. 1133-1136 ◽

Cited By ~ 30

Author(s):

M. Passlack ◽

M. Hong ◽

J.P. Mannaerts

Keyword(s):

Surface Passivation

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In-situ photo-modulated reflectance study on the interface of Al and GaAs surface quantum well

Acta Physica Sinica ◽

10.7498/aps.53.3521 ◽

2004 ◽

Vol 53 (10) ◽

pp. 3521

Author(s):

Yuan Xian-Zhang ◽

Miao Zhong-Lin

Keyword(s):

Quantum Well ◽

Gaas Surface

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In-situ Ga/sub 2/O/sub 3/ process for GaAs inversion/accumulation device and surface passivation applications

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.499220 ◽

2002 ◽

Cited By ~ 3

Author(s):

M. Passlack ◽

Minghwei Hong ◽

J.P. Mannaerts ◽

S.N.G. Chu ◽

R.L. Opila ◽

...

Keyword(s):

Surface Passivation

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GaAs Surface Passivation for Device Applications.

10.21236/ada113007 ◽

1981 ◽

Author(s):

R. W. Grant ◽

K. R. Elliott ◽

S. P. Kowalczyk ◽

D. L. Miller ◽

J. R. Waldrop

Keyword(s):

Surface Passivation ◽

Gaas Surface ◽

Device Applications

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Surface passivation of GaAs with ultrathin Si3N4/Si interface control layer formed by MBE and in situ ECR plasma nitridation

Applied Surface Science ◽

10.1016/s0169-4332(97)00576-x ◽

1998 ◽

Vol 123-124 ◽

pp. 599-602 ◽

Cited By ~ 25

Author(s):

Tamotsu Hashizume ◽

Kengo Ikeya ◽

Morimichi Mutoh ◽

Hideki Hasegawa

Keyword(s):

Surface Passivation ◽

Plasma Nitridation ◽

Ecr Plasma ◽

Interface Control ◽

Control Layer

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Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2638855 ◽

2017 ◽

Vol 64 (3) ◽

pp. 832-839 ◽

Cited By ~ 29

Author(s):

Huaxing Jiang ◽

Chao Liu ◽

Yuying Chen ◽

Xing Lu ◽

Chak Wah Tang ◽

...

Keyword(s):

Surface Passivation ◽

Gate Dielectric

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Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

MRS Proceedings ◽

10.1557/proc-342-261 ◽

1994 ◽

Vol 342 ◽

Author(s):

Olivier Dulac ◽

Yves I. Nissim

Keyword(s):

Field Effect ◽

Microwave Plasma ◽

Hydrogen Plasma ◽

Surface Cleaning ◽

Film Deposition ◽

Gaas Surface ◽

Nitride Film ◽

Semiconductor Surfaces ◽

Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

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