Passivation of III-V Semiconductor Surfaces Using Light Assisted Integrated Processes

1994 ◽  
Vol 342 ◽  
Author(s):  
Olivier Dulac ◽  
Yves I. Nissim
Keyword(s):  
Field Effect ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Film Deposition ◽  
Gaas Surface ◽  
Nitride Film ◽  
Semiconductor Surfaces ◽  
Silicon Nitride Film

ABSTRACTPassivation of III-V semiconductor surfaces and especially the GaAs surface has been studied for over two decades without significant breakthrough. However, III-V device performances are still often limited by surface properties. In particular field effect behaviour in GaAs has been impossible to obtain due to the Fermi level pinning at the surface of this material. This paper presents an integrated sequence of low thermal budget processes to provide contamination control at the GaAs surface leading to very promising field effect on GaAs.In-situ surface cleaning using a Distributed Electron Cyclotron Resonance Microwave plasma (DECR MMP) has been integrated with a thin dielectric film deposition facility using light assisted CVD technics. Photoluminescence results carried out on GaAs surfaces have demonstrated that exposure to a hydrogen plasma induces lower recombination rates on these surfaces. Bulk diffusion of hydrogen during this process can be controlled and eliminated using an integrated Rapid Thermal Annealing (RTA). Finally, in-situ encapsulation by a dielectric allows one to stabilize the electronic properties of the surface for passivation applications. A silicon nitride film deposited by a direct UV photolysis deposition process has been developed for this study and is presented here.

Surface Cleaning Effects of Silicon Substrates by ECR Hydrogen Plasma on Subsequent Homoepitaxial Growth

2005 ◽  
Vol 475-479 ◽  
pp. 4067-4070
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Electron Cyclotron Resonance ◽  
Substrate Surface ◽  
Hydrogen Plasma ◽  
Surface Cleaning ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Defective Layer ◽  
Interfacial Oxygen

We have demonstrated the preparation of the almost defect-free homoepitaxial layer and the defective layer, respectively, with and without applying the in-situ cleaning of the silicon substrate surface using electron cyclotron resonance hydrogen plasma. Secondary ion mass spectroscopy indicated that the interfacial oxygen and carbon concentrations, respectively, decreased and increased with the in-situ cleaning. We have investigated the effect of process parameters such as microwave power, d.c bias, and cleaning time, on the epitaxial growth, by evaluating the cross-sectional transmission electron microscopy images of the subsequently deposited Si homoepitaxial film.

Low Energy, High Density Plasma (ICP) for Low Defect Etching and Deposition Applications on Compound Semiconductors

1999 ◽  
Vol 573 ◽  
Author(s):  
J. Etrillard ◽  
H. Maher ◽  
M. Medjdoub ◽  
J. L. Courant ◽  
Y. I. Nissim
Keyword(s):  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Point Of View ◽  
Etch Depth ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Inductively Coupled ◽  
Device Processing

ABSTRACTThe use of a low ion energy of an extremely dense plasma has been studied as a dry etching as well as a thin film deposition tool (same source, two different reactors) for InP and GaAs device processing. Under these working conditions it is expected to control well the etch depth or in the case of deposition to obtain high deposition rates. In all cases minimun ion damages are induced on the processed substrate. Both technologies are presented here from the point of view of material analysis as well as device processing demonstration. For etching, the gate recess of an InP-based HEMT has been addressed as one of the key technological step that requires such properties for good device performances. InGaAs/InAlAs HEMT like structures have been grown and the recess of the InGaAs layer has been conducted with a 13eV SiCl4 inductively coupled plasma (ICP). DLTS and AFM measurements made on the exposed AlinAs surface after InGaAs removal indicate that device quality on its electrical and structural properties are achieved. Passivation of fully processed HEMT devices with a ICP enhanced chemical vapor deposition (ICPECVD) silicon nitride film is being studied.

In Situ Diagnostics of Methane/Hydrogen Plasma Interactions with Si(100)

1999 ◽  
Vol 569 ◽  
Author(s):  
H. L. Duan ◽  
Stacey F. Bent
Keyword(s):  
Silicon Surface ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Film Deposition ◽  
Diagnostic Study ◽  
Methane Pressure ◽  
Plasma Interactions ◽  
Ecr Plasma ◽  
Hydrogen Dilution

ABSTRACTMethane/hydrogen plasmas have been reported to be sources both for a-C:H film deposition and for compound semiconductor etching. In this work, an in situ diagnostic study of methane/hydrogen plasma interactions with a silicon surface is carried out, focusing on the effect of hydrogen dilution. A remote electron cyclotron resonance (ECR) plasma using a H2/Ar mixture excites methane gas near a Si(l 00) substrate. In situ multiple internal reflection Fourier transform infrared (MIR-FTIR) spectroscopy is used to probe the surface species at different hydrogen dilution ratios. We find that at low methane pressure without hydrogen dilution, a-C:H films are deposited. With H2 dilution, the results suggests that some sputter/etching of the silicon surface occurs. Hence, methyl groups are identified as potential etchants for silicon materials. The data suggest that there is a competition between etching and deposition chemistry which depends strongly upon the methane pressure and hydrogen ratio in the plasma.

scholarly journals Improvement of Silicon Nitride Film Deposition Rate by Low Frequency Double Plasma CVD Methode.

Shinku ◽  
1991 ◽  
Vol 34 (4) ◽  
pp. 427-431
Author(s):  
Mitsuo. SHIMOZUMA ◽  
Jin. MURAKAMI ◽  
Gen. TOCHITANI ◽  
Takashi. TSUJI ◽  
Hiroaki. TAGASHIRA
Keyword(s):  
Silicon Nitride ◽  
Deposition Rate ◽  
Low Frequency ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Plasma Cvd ◽  
Film Deposition Rate

In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
S. V. Hattangady ◽  
R. A. Rudder ◽  
G. G. Fountain ◽  
D. J. Vitkavage ◽  
R. J. Markunas
Keyword(s):  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
High Energy ◽  
Surface Cleaning ◽  
High Energy Electron ◽  
New Approach ◽  
Wet Chemistry ◽  
Plasma Treatments

We have demonstrated low temperature (300°C) Ge epitaxy on Ge(111) and on Si(100) substrates. Critical to this epitaxy has been the use of wet chemistry to produce controlled, thin oxides on the substrates prior to loading into the reactor and an in-situ 300°C hydrogen plasma treatment to remove those oxides from the semiconductor surfaces. Reflection high energy electron diffraction shows the plasma treatments to be effective in producing clean, well-ordered surfaces. This represents a new approach for in-situ cleaning of Ge(111) and Si(100) surfaces.

Improvement in the Sensitivity of the Response of Diamond Thin Films to X-Ray

2007 ◽  
Vol 336-338 ◽  
pp. 1718-1721 ◽  
Author(s):  
Xiao Ming Liao ◽  
Jun Guo Ran ◽  
Li Gou ◽  
Jin Zhang ◽  
Bao Hui Su ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Post Treatment ◽  
X Ray ◽  
Microwave Plasma Cvd ◽  
Higher Sensitivity

Due to some inferior performance of Chemical Vapor Deposition (CVD) diamond dosimeters, their applications are somewhat limited. The quality of diamond films was improved using Microwave Plasma CVD (MWPCVD) by the modified processes such as cyclic deposition and in-situ plasma post-treatment. The simple radiation dosimeters were fabricated in a sandwich configuration. Influence of purity and orientation of the diamond films on the sensitivity of the dosimeters was studied. The results indicate that the radiation dosimeters have high sensitivity to X-ray and the response of the devices is linear with the X-ray flux. The higher the purity of films is, the higher the resistivity and sensitivity are. The dosimeter based on [100] film has higher sensitivity than that based on [111] film. The dosimeter based on films prepared by cyclic deposition has higher sensitivity than that based on films prepared by the conventional deposition. The characterization of the response to X-ray also shows that in-situ oxygen plasma post-treatment leads to the higher sensitivity of dosimeters compared with in-situ nitrogen, hydrogen plasma post-treatments.

Silicon Nitride Film Deposition by Photochemical Vapor Deposition Using an Argon Excimer Lamp

2007 ◽  
Vol 46 (6A) ◽  
pp. 3534-3536 ◽  
Author(s):  
Yoshinari Maezono ◽  
Kiyohiko Toshikawa ◽  
Kou Kurosawa ◽  
Kouichi Amari ◽  
Sou Ishimura ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Vapor Deposition ◽  
Film Deposition ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Excimer Lamp ◽  
Photochemical Vapor Deposition

GaAs Surface Composition Investigation during Al Thin Film Growth Using the CBE Method

2010 ◽  
Vol 307 ◽  
pp. 75-83 ◽  
Author(s):  
Dmitri V. Lioubtchenko ◽  
Tatiana A. Briantseva ◽  
Z.M. Lebedeva ◽  
Tim J. Bullough
Keyword(s):  
Laser Power ◽  
Film Growth ◽  
Surface Composition ◽  
Film Formation ◽  
Film Deposition ◽  
Thin Film Growth ◽  
Gaas Surface ◽  
Al Thin Film ◽  
Composition Changes

GaAs surface composition changes occurring during Al film growth using the CBE method with laser assistance were investigated in situ by means of laser reflectivity. The results were compared with data on precise chemical analyses and X-ray microanalyses carried out after film deposition. It was found that the peculiarity of film formation depended upon the laser power. Physicochemical interactions of the Ga atoms from the GaAs surface, with atoms and molecules from the surrounding media, are determinative reactions at a laser power of 2W. At a power of 0.02W, the laser reflectivity changes were mainly due to reactions with Al. The appearance of “free” Ga and As in the region outside of the laser spot indicated the destruction of GaAs islands weakly connected with the GaAs surface.

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