In-situ Ga/sub 2/O/sub 3/ process for GaAs inversion/accumulation device and surface passivation applications

2002 ◽  
Author(s):  
M. Passlack ◽  
Minghwei Hong ◽  
J.P. Mannaerts ◽  
S.N.G. Chu ◽  
R.L. Opila ◽  
...  
Keyword(s):  
Surface Passivation

Surface Passivation of Bare Aluminum Nanoparticles using Perfluoroalkyl Carboxylic Acids

2003 ◽  
Vol 800 ◽  
Author(s):  
R. Jason Jouet ◽  
Andrea D. Warren ◽  
David M. Rosenberg ◽  
Victor J. Bellitto
Keyword(s):  
Composite Material ◽  
Surface Passivation ◽  
Catalytic Decomposition ◽  
Self Assembled Monolayers ◽  
Aluminum Nanoparticles ◽  
Wet Chemistry ◽  
Al Nanoparticles ◽  
Polar Organic Solvents ◽  
Assembled Monolayers

AbstractSurface passivation of unpassivated Al nanoparticles has been realized using self assembled monolayers (SAMs). Nanoscale Al particles were prepared in solution by catalytic decomposition of H3Al•NMe3 or H3Al•N(Me)Pyr by Ti(OiPr)4 and coated in situ using a perfluoroalkyl carboxylic acid SAM. Because the Al particles are prepared using wet chemistry techniques and coated in solution, they are free of oxygen passivation. This SAM coating passivates the aluminum and seems to prevent the oxidation of the particles in air and renders the composite material, to some extent, soluble in polar organic solvents such as diethyl ether. Characterization data including SEM, TEM, TGA, and ATR-FTIR of prepared materials is presented.

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

2017 ◽  
Vol 64 (3) ◽  
pp. 832-839 ◽  
Author(s):  
Huaxing Jiang ◽  
Chao Liu ◽  
Yuying Chen ◽  
Xing Lu ◽  
Chak Wah Tang ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Gate Dielectric

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

2007 ◽  
Vol 298 ◽  
pp. 826-830 ◽  
Author(s):  
M.-A. di Forte Poisson ◽  
N. Sarazin ◽  
M. Magis ◽  
M. Tordjman ◽  
E. Morvan ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Gan Hemt

scholarly journals In-situ Atomic-Resolution Observations of Surface Passivation Induced Metal/Oxide Interfacial Transformation

2020 ◽  
Vol 26 (S2) ◽  
pp. 1678-1679
Author(s):  
Xiaobo Chen ◽  
Dongxiang Wu ◽  
Xianhu Sun ◽  
Dmitri Zakharov ◽  
Sooyeon Hwang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Surface Passivation ◽  
Atomic Resolution

The Interface Properties of La2O3/GaAs System by Surface Passivation

2012 ◽  
Vol 557-559 ◽  
pp. 1815-1818 ◽  
Author(s):  
Ting Ting Jia ◽  
Xing Hong Cheng ◽  
Duo Cao ◽  
Da Wei Xu ◽  
You Wei Zhang ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Gate Dielectric ◽  
Surface Preparation ◽  
Atomic Layer ◽  
Native Oxide ◽  
Atomic Force ◽  
Transmission Electron ◽  
Layer Deposition

In this work, La2O3 gate dielectric film was deposited by plasma enhanced atomic layer deposition. we investigate the effect of surface preparation of GaAs substrate, for example, native oxide, S-passivation, and NH3 plasma in situ treatment. The interfacial reaction mechanisms of La2O3 on GaAs is studied by means of X-ray photoelectron spectroscopy(XPS), high-resolution transmission electron microscopy(HRTEM) and atomic force microscope (AFM). As-O bonding is found to get effectively suppressed in the sample GaAs structures with both S-passivation and NH3 plasma surface treatments.

Sign in / Sign up

Export Citation Format

Share Document