Evaluation of crystal quality of ZnTe/GaAs epilayers by the double crystal rocking curve

2001 ◽  
Vol 69 (1-3) ◽  
pp. 30-35 ◽  
Author(s):  
Sungun Nam ◽  
Young-Moon Yu ◽  
Jongkwang Rhee ◽  
Byungsung O ◽  
Yong Dae Choi ◽  
...  
Keyword(s):  
Crystal Quality ◽  
Double Crystal ◽  
Rocking Curve

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

Effects of Surface Preparation on Epitaxial GaN on 6H-SIC Deposited Via Mocvd

1998 ◽  
Vol 537 ◽  
Author(s):  
Z. Y. Xie ◽  
C. H. Wei ◽  
L. Y. Li ◽  
J. H. Edgar ◽  
J. Chaudhuri ◽  
...  
Keyword(s):  
Surface Preparation ◽  
Chemical Vapor ◽  
Crystal Quality ◽  
Differential Interference Contrast Microscopy ◽  
Double Crystal ◽  
X Ray ◽  
Interference Contrast Microscopy ◽  
The Many ◽  
Substrate Surfaces

AbstractA comparison was made of 6H-SiC surfaces etched with H2, C2H4/H2, and HCl/H2, and the resulting crystal quality of epitaxial GaN films deposited on these substrates. To remove the many fine scratches and to smooth the rough surfaces typical of commercial SiC substrates, the Si-face 6H-SiC substrates were etched in H2, C2H4/H2, and HCl/H2 at 1450°C. GaN was subsequently deposited on these etched surfaces after first depositing a low temperature GaN buffer layer via metalorganic chemical vapor deposition (MOCVD). The surface morphologies after etching and after GaN deposition were characterized by atomic force microscopy and Normaski differential interference contrast microscopy, while the crystal quality of the GaN films was assessed by double crystal x-ray rocking curves and x-ray topography. 6H-SiC substrate surfaces were improved in terms of the removal of scratches and the reduction of surface roughness, and both surface morphology and crystal quality of the subsequently deposited GaN films were enhanced. However, the dislocation density was not decreased by the surface etching. The best GaN film was produced by etching the substrate in pure H2 for 40 minutes before growth. Recommendations for the optimum substrate treatment are made.

{224} Plane X-Ray Diffraction Study of GaAs on Si Wafers Using a Conventional Double Crystal Diffractometer

1987 ◽  
Vol 91 ◽  
Author(s):  
J.W. Lee ◽  
D.K. Bowen ◽  
J.P. Salerno
Keyword(s):  
Incident Angle ◽  
Wafer Surface ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Near Surface ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas On Si ◽  
Plane Diffraction

ABSTRACTIn an effort to evaluate the near surface crystal quality of GaAs on Si wafers, {224} plane diffraction were investigated using a conventional double crystal x-ray diffractometer without any high intensity radiation source. The x-ray incident angle to wafer surface varied from 3.6 to 9.6 degrees for different {224} planes due to the substrate tilt angle of 3 degrees. The GaAs to Si rocking curve intensity ratio increased significantly as the incident angle decreased. For the diffraction with 3.6 degree incident angle, only the GaAs peak was detected from the 3.5 um thick GaAs on Si wafer and the GaAs peak became narrower. These indicates that this conventional x-ray diffraction technique is applicable for the near surface quality evaluation of GaAs on Si wafers.

scholarly journals Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD

1999 ◽  
Vol 4 (S1) ◽  
pp. 281-286 ◽  
Author(s):  
Z. Y. Xie ◽  
C. H. Wei ◽  
L. Y. Li ◽  
J. H. Edgar ◽  
J. Chaudhuri ◽  
...  
Keyword(s):  
Surface Preparation ◽  
Chemical Vapor ◽  
Crystal Quality ◽  
Differential Interference Contrast Microscopy ◽  
Double Crystal ◽  
X Ray ◽  
Interference Contrast Microscopy ◽  
The Many ◽  
Substrate Surfaces

A comparison was made of 6H-SiC surfaces etched with H2, C2H4/H2, and HCl/H2, and the resulting crystal quality of epitaxial GaN films deposited on these substrates. To remove the many fine scratches and to smooth the rough surfaces typical of commercial SiC substrates, the Si-face 6H-SiC substrates were etched in H2, C2H4/H2, and HCl/H2 at 145 °C. GaN was subsequently deposited on these etched surfaces after first depositing a low temperature GaN buffer layer via metalorganic chemical vapor deposition (MOCVD). The surface morphologies after etching and after GaN deposition were characterized by atomic force microscopy and Normaski differential interference contrast microscopy, while the crystal quality of the GaN films was assessed by double crystal x-ray rocking curves and x-ray topography. 6H-SiC substrate surfaces were improved in terms of the removal of scratches and the reduction of surface roughness, and both surface morphology and crystal quality of the subsequently deposited GaN films were enhanced. However, the dislocation density was not decreased by the surface etching. The best GaN film was produced by etching the substrate in pure H2 for 40 minutes before growth. Recommendations for the optimum substrate treatment are made.

High Quality GaP Growth on Si Substrates By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
K. Uchida ◽  
Y. Kohama ◽  
M. Tajima ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Diffraction Peak ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

ANALYSIS OF GaAs/AlAs SUPERLATTICE STRUCTURE BY X-RAY DOUBLE-CRYSTAL DIFFRACTION

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2375-2379
Author(s):  
L. LI ◽  
J. C. ZHONG ◽  
M. LI ◽  
X. H. WANG ◽  
G. J. LIU
Keyword(s):  
Gaas Substrate ◽  
Angular Distance ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Superlattice Structure ◽  
Diffraction Peaks ◽  
Superlattice Structures ◽  
Structure Period

The high quality GaAs/AlAs superlattice structures are characterized by X-ray double-crystal diffraction. The structure parameters of the superlattice are obtained from the rocking curve. The first and second satellite peaks appear around the main 0th-order peak. The FWHMs of 0th-order peak and GaAs substrate are quite close, showing much higher integrity of the crystal lattice. The superlattice structure period D, GaAs thick-ness LB and AlAs thickness LZ can be calculated according to the measured angular distance between the diffraction peaks. The experimental results show that the measured values are the same as the designed results. They are useful for improving the quality of superlattice.

X-Ray Rocking Curve Characterization of SiC Substrates

2008 ◽  
Vol 600-603 ◽  
pp. 361-364
Author(s):  
Murugesu Yoganathan ◽  
Ping Wu ◽  
Ilya Zwieback
Keyword(s):  
Growth Process ◽  
Crystal Quality ◽  
Nondestructive Technique ◽  
Lattice Curvature ◽  
Rocking Curve ◽  
X Ray ◽  
Typical Variation

X-ray rocking curve characterization is a relatively fast and nondestructive technique that can be utilized to evaluate the crystal quality of SiC substrates. The contribution of lattice curvature to rocking curve broadening is estimated, and shown to be the major contribution to the measured broadening (FWHM). The feedback on lattice quality is used to optimize our SiC growth process. In the optimized growth runs, the typical variation in rocking curve sample angle Ω across the entire 3” diameter wafer is about 0.2 degrees. Possible mechanisms leading to changes in the lattice curvature are discussed.

Epitaxial Growth OF (001)- and (111)-Oriented PTMNSB Films and Multilayers

1995 ◽  
Vol 384 ◽  
Author(s):  
M.C. Kautzky ◽  
B.M. Clemens
Keyword(s):  
Kerr Effect ◽  
Single Phase ◽  
Single Layer ◽  
Film Structure ◽  
Interference Effects ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
Rocking Curve ◽  
Large Rotations

ABSTRACTIn this paper we report the successful growth of single-phase epitaxial PtMnSb films and multilayers by dc magnetron cosputtering, both in the (001) orientation on MgO(001) and W(001), and in the (111) orientation on Al2O3 (0001). Single-layer films in the thickness range 50Å≤t≤1000Å were grown and characterized using x-ray diffraction (XRD), magneto-optic Kerr effect (MOKE), and vibrating sample magnetometry (VSM). The in-plane orientation relationships, as determined by asymmetric XRD, were PtMnSb[100]∥MgO[110], PtMnSb[100]∥W[100], and PtMnSb[101∥Al2O3[2110]. The crystalline quality of the films was found to depend strongly upon the substrate, growth temperature, film thickness, and presence of a capping layer, but rocking curve widths of 1° or less were achieved on each substrate. Measurement of the in-plane strain showed that the films were almost entirely relaxed, with strains <1%. In-plane magnetization was observed in all cases, with moments and coercivities in the 400-500 emu/cm3 and 100-200 Oe ranges respectively. Polar Kerr spectra showed large rotations (0.75° - 1.03°), whose peak wavelengths appear to depend on both film structure and optical interference effects.

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