Cluster ion bombardment on atomically flat Au(111) solid surfaces

1998 ◽  
Vol 54 (1-3) ◽  
pp. 76-79 ◽  
Author(s):  
Daisuke Takeuchi ◽  
Toshio Seki ◽  
Takaaki Aoki ◽  
Jiro Matsuo ◽  
Isao Yamada
Keyword(s):  
Ion Bombardment ◽  
Solid Surfaces ◽  
Cluster Ion ◽  
Atomically Flat

SPUTTERING WITH GAS CLUSTER-ION BEAMS

1996 ◽  
Vol 03 (01) ◽  
pp. 1017-1021 ◽  
Author(s):  
J. MATSUO ◽  
M. AKIZUKI ◽  
J. NORTHBY ◽  
G.H. TAKAOKA ◽  
I. YAMADA
Keyword(s):  
Ion Irradiation ◽  
Removal Rate ◽  
Ion Beam ◽  
Solid Surfaces ◽  
Silicon Surfaces ◽  
Cluster Ions ◽  
Mass Filter ◽  
Cluster Bombardment ◽  
Cluster Ion Beams ◽  
Cluster Ion

A high-current (~100 nA) cluster-ion-beam equipment with a new mass filter has been developed to study the energetic cluster-bombardment effects on solid surfaces. A dramatic reduction of Cu concentration on silicon surfaces has been achieved by 20-keV Ar cluster (N~3000) ion bombardment. The removal rate of Cu with cluster ions is two orders of magnitude higher than that with monomer ions. A significantly higher sputtering yield is expected for cluster-ion irradiation. An energetic cluster-ion beam is quite suitable for removal of metal.

Etching Reactions at Solid Surfaces

1984 ◽  
Vol 38 ◽  
Author(s):  
Harold F. Winters ◽  
J. W. Coburn
Keyword(s):  
Experimental Data ◽  
Conceptual Framework ◽  
Gas Phase ◽  
Ion Bombardment ◽  
Solid Surfaces ◽  
Plasma Environment

AbstractAn understanding of etching reactions in a plasma environment requires a knowledge of: (1) the types of gas phase particles which react at the surface, (2) the etch products formed, and (3) the processes which lead from reactants to products. Experimental data relavant to these topics are reviewed in this paper. A conceptual framework for understanding the etching reaction is reviewed and it is shown that the experimental data presently available is consistent with this framework. The influence of ion bombardment on etching reactions is extensively discussed.

Gas cluster ion bombardment of GaAs: XPS depth profiles and molecular dynamics modelling

2021 ◽  
Author(s):  
Helen Oppong-Mensah ◽  
Mark A. Baker ◽  
Tim S. Nunney ◽  
Richard G. White ◽  
Jonathon England ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Bombardment ◽  
Depth Profiles ◽  
Cluster Ion ◽  
Dynamics Modelling

Decoration of ZnO needles with nanoripples using gas cluster ion bombardment

2020 ◽  
Vol 264 ◽  
pp. 127356 ◽  
Author(s):  
Vasiliy Pelenovich ◽  
Xiaomei Zeng ◽  
Rakhim Rakhimov ◽  
Wenbin Zuo ◽  
Canxin Tian ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Cluster Ion

Functionalization of Silicon Crystal Surface by Energetic Cluster Ion Bombardment

2012 ◽  
Vol 12 (12) ◽  
pp. 9136-9141
Author(s):  
Vasily Lavrentiev ◽  
Jiri Vacik ◽  
Alexandr Dejneka ◽  
Lubomir Jastrabik ◽  
Vladimir Vorlicek ◽  
...  
Keyword(s):  
Crystal Surface ◽  
Silicon Crystal ◽  
Ion Bombardment ◽  
Cluster Ion

scholarly journals Physical and chemical sputterings of solid surfaces irradiated by ethanol cluster ion beams

2008 ◽  
Vol 79 (2) ◽  
pp. 02C503 ◽  
Author(s):  
Gikan H. Takaoka ◽  
Masakazu Kawashita ◽  
Takeshi Okada
Keyword(s):  
Ion Beams ◽  
Solid Surfaces ◽  
Cluster Ion Beams ◽  
Cluster Ion ◽  
Physical And Chemical

Cluster-ion bombardment studies to reveal the amorphization mode in strained Si0.8Ge0.2

2012 ◽  
Vol 92 (11) ◽  
pp. 625-632
Author(s):  
Michael S. Martin ◽  
Di Chen ◽  
Phillip E. Thompson ◽  
Xuemei Wang ◽  
Wei-Kan Chu ◽  
...  
Keyword(s):  
Ion Bombardment ◽  
Cluster Ion
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