Influence of target power density and substrate bias voltage on the electrochemical properties of type 304 SS films prepared by unbalanced magnetron sputtering

Rutile TiO2 films are normally used as biomaterial that synthesized on unheated stainless steel type 316L and glass slide substrates by dual cathode DC unbalanced magnetron sputtering. The influence of the substrate bias voltages (Vsb), from 0 V to-150V, on the structure of the as-deposited films was investigated. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD) technique, the films thickness and surface morphology was evaluated by atomic force microscopy (AFM) technique, respectively. The results show that the as-deposited films were transparent and have high transmittance in visible regions. The crystal structure of as-deposited films show the XRD patterns of rutile (110) with Vsb at 0V and shifted to rutile (101) with increasing Vsb. The films roughness (Rrms) and the thickness were 3.0 nm to 5.7 nm and 420 nm to 442 nm, respectively.

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The influence of substrate bias voltage on the electrochemical properties of ZrN thin films deposited by radio-frequency magnetron sputtering: Biomedical application

Journal of Electrical Engineering ◽

10.2478/jee-2019-0051 ◽

2019 ◽

Vol 70 (7) ◽

pp. 112-116

Author(s):

Mourad Azibi ◽

Nadia Saoula ◽

Hamid Aknouche

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Electrochemical Properties ◽

Bias Voltage ◽

Biomedical Application ◽

Substrate Bias ◽

Radio Frequency Magnetron Sputtering ◽

Substrate Bias Voltage ◽

Force Microscopy

Abstract In order to study the influence of the substrate bias on the properties of ZrN thin films deposited by radio-frequency magnetron sputtering for biomedical application. Films of ZrN were grown onto 316L stainless steel substrate using radio-frequency (rf) magnetron sputtering from a pure zirconium target in Ar - N2 gas mixture. The substrate bias voltage was varied from 0 to −100 V, which produces a variation in the structural and electrochemical properties of the obtained films. The deposited films were characterized by X-Rays Diffraction, Atomic Force Microscopy, scanning force microscopy and potentiodynamic polarization.

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Effects of Substrate Bias on the Microstructure and Properties of a-C:H Films Deposited by MFPUMST

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.476-478.2344 ◽

2012 ◽

Vol 476-478 ◽

pp. 2344-2347

Author(s):

Hai Yang Dai ◽

Feng Xiao Zhai ◽

Xue Rui Cheng ◽

Lei Su ◽

Zhen Ping Chen

Keyword(s):

Surface Roughness ◽

Bias Voltage ◽

Substrate Bias ◽

Substrate Bias Voltage ◽

Force Microscopy ◽

Unbalanced Magnetron Sputtering ◽

Atomic Force ◽

Unbalanced Magnetron ◽

Hydrogenated Amorphous ◽

Mixed Gases

Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the acetylene-argon mixed gases. These films were characterized with Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. AFM and nanoindentation results reveal that the surface roughness and nano-hardness of the films increase with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. The mechanism of sputtering current on the sp3 fraction is discussed in this paper.

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Effects of Bias on the Bonding Structure and Mechanical Property of a-C:H Films Deposited by MFPUMST

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.507.38 ◽

2012 ◽

Vol 507 ◽

pp. 38-43

Author(s):

Hui Jiang ◽

Hai Yang Dai ◽

Ning Kang Huang

Keyword(s):

Mechanical Property ◽

Bias Voltage ◽

Substrate Bias ◽

Substrate Bias Voltage ◽

Bonding Structure ◽

Unbalanced Magnetron Sputtering ◽

Unbalanced Magnetron ◽

Hardness Increase ◽

Hydrogenated Amorphous ◽

Mixed Gases

Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the methane-argon mixed gases. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. Nano-hardness for these films prepared under different substrate bias voltage show that nano-hardness increase with increasing substrate bias voltage from 0 to 100 V, and then decrease from 100 up to 200 V. The results above indicate that the sp3 fraction in the prepared a-C:H films is directly related to nano-hardness, therefore, substrate bias voltage is an important factor for influence on the bonding configuration of the deposited a-C:H films. The related mechanism is discussed by sub-plantation model in this paper.

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