Influence of the Substrate Bias Voltage on the Structure of Rutile TiO2 Films Prepared by Dual Cathode DC Unbalanced Magnetron Sputtering

2012 ◽  
Vol 506 ◽  
pp. 82-85
Author(s):  
P. Kasemanankul ◽  
N. Witit-Anun ◽  
S. Chaiyakun ◽  
P. Limsuwan
Keyword(s):  
Crystal Structure ◽  
Magnetron Sputtering ◽  
Grazing Incidence ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Force Microscopy ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Xrd Patterns ◽  
Deposited Films

Rutile TiO2 films are normally used as biomaterial that synthesized on unheated stainless steel type 316L and glass slide substrates by dual cathode DC unbalanced magnetron sputtering. The influence of the substrate bias voltages (Vsb), from 0 V to-150V, on the structure of the as-deposited films was investigated. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD) technique, the films thickness and surface morphology was evaluated by atomic force microscopy (AFM) technique, respectively. The results show that the as-deposited films were transparent and have high transmittance in visible regions. The crystal structure of as-deposited films show the XRD patterns of rutile (110) with Vsb at 0V and shifted to rutile (101) with increasing Vsb. The films roughness (Rrms) and the thickness were 3.0 nm to 5.7 nm and 420 nm to 442 nm, respectively.

Structural and Optical Properties of ZrO2 Thin Films Deposited by Reactive DC Unbalanced Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 374-377
Author(s):  
Nirun Witit-Anun ◽  
Surasing Chaiyakun
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Optical Constants ◽  
Phase 1 ◽  
Grazing Incidence ◽  
Visible Range ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Surface Morphologies ◽  
Deposited Films

Zirconium oxide (ZrO2) thin films were deposited on Si-wafer and glass slide substrates by reactive DC unbalanced magnetron sputtering at different deposition times. A pure metallic zirconium target (99.97%) was sputtered in a gas mixture of argon and oxygen. The crystal structure was characterized by GI-XRD (grazing-incidence X-ray diffraction) whereas surface morphologies and films thickness were evaluated by AFM (atomic force microscopy). The transmittance spectrum was measured by spectrophotometer. The optical constants of the as-deposited films were calculated by Swanepoel method. It was found that the ZrO2films deposited on silicon substrates showed a highly monoclinic phase (-1 1 1). The as-deposited films showed high transmittance in visible range. The thickness and roughness varied from 155 nm to 502 nm and 3.1 nm to 3.6 nm, respectively, with increasing of deposition times. The optical constants namely refractive index (n) and extinction coefficient (k), at 550 nm, was about 1.9 - 2.1 and 0.0003 - 0.0009, respectively. In addition, the energy band gap (Eg) of the as-deposited film was approximately 4.17 eV.

Effects of Substrate Bias on the Microstructure and Properties of a-C:H Films Deposited by MFPUMST

2012 ◽  
Vol 476-478 ◽  
pp. 2344-2347
Author(s):  
Hai Yang Dai ◽  
Feng Xiao Zhai ◽  
Xue Rui Cheng ◽  
Lei Su ◽  
Zhen Ping Chen
Keyword(s):  
Surface Roughness ◽  
Bias Voltage ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Force Microscopy ◽  
Unbalanced Magnetron Sputtering ◽  
Atomic Force ◽  
Unbalanced Magnetron ◽  
Hydrogenated Amorphous ◽  
Mixed Gases

Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the acetylene-argon mixed gases. These films were characterized with Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. AFM and nanoindentation results reveal that the surface roughness and nano-hardness of the films increase with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. The mechanism of sputtering current on the sp3 fraction is discussed in this paper.

Effect of Sputtering Power on Structural and Optical Properties of AlN Thin Film Deposited by Reactive DC Sputtering Technique

2013 ◽  
Vol 770 ◽  
pp. 177-180 ◽  
Author(s):  
Nirun Witit-Anun ◽  
Jakrapong Kaewkhao ◽  
Surasing Chaiyakun
Keyword(s):  
Crystal Structure ◽  
Grazing Incidence ◽  
Optical Transmittance ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power ◽  
Envelope Method ◽  
Deposited Films ◽  
Si Wafer

Aluminum nitride (AlN) thin films have been deposited on the glass slide and Si-wafer by reactive DC magnetron sputtering technique at different sputtering power. The as-deposited films have been characterized by grazing-incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM) and optical transmittance, respectively. The results show that the as-deposited films were transparent and have high transmittance in visible regions. The crystal structure from XRD results show that the as-deposited films are amorphous with low sputtering power and turn to crystal structure with high sputtering power, which showed orientation of AlN structure corresponding to the AlN(1 0 0), AlN(1 0 1) and AlN(1 1 0). The roughness values and the films thickness from AFM was varied from 0.4 nm to 3.9 nm and 199 nm to 905 nm, respectively. The optical constants namely the refractive index n and the extinction coefficient k, were determined from transmittance spectrum in the visible regions by using envelope method. For 500 nm, n and k, were in the range of 1.8 2.0 and 0.014 0.004 respectively.

Effect of Substrate-Target Distance on the Structure of TiCrN Films Deposited from Mosaic Target by Reactive DC Magnetron Sputtering

2019 ◽  
Vol 798 ◽  
pp. 163-168
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Magnetron Sputtering ◽  
Crystal Size ◽  
Target Distance ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Unbalanced Magnetron ◽  
Deposited Films

Titanium chromium nitride (TiCrN) thin films were deposited on Si substrates by reactive DC unbalanced magnetron sputtering from the Ti-Cr mosaic target. The effect of substrate-to-target distances (dst) on the structure of TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and chemical composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystal size less than 65 nm. The crystal size of all plane were in the range of 36.3 – 65.7 nm. The lattice constants were in the range of 4.169 Å to 4.229 Å. The thickness and roughness decrease from 500 nm to292 nm and 3.6 nm to 2.2 nm, respectively, with increasing the substrate-to-target distance. The chemical composition, Ti, Cr and N contents, of the as-deposited films were varied with the substrate-to-target distance. The as-deposited films showed compact columnar and dense morphology as a result of increasing the substrate-to-target distance.

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