Effects of Substrate Bias on the Microstructure and Properties of a-C:H Films Deposited by MFPUMST

2012 ◽  
Vol 476-478 ◽  
pp. 2344-2347
Author(s):  
Hai Yang Dai ◽  
Feng Xiao Zhai ◽  
Xue Rui Cheng ◽  
Lei Su ◽  
Zhen Ping Chen
Keyword(s):  
Surface Roughness ◽  
Bias Voltage ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Force Microscopy ◽  
Unbalanced Magnetron Sputtering ◽  
Atomic Force ◽  
Unbalanced Magnetron ◽  
Hydrogenated Amorphous ◽  
Mixed Gases

Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the acetylene-argon mixed gases. These films were characterized with Raman spectroscopy, atomic force microscopy (AFM) and nanoindentation. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. AFM and nanoindentation results reveal that the surface roughness and nano-hardness of the films increase with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. The mechanism of sputtering current on the sp3 fraction is discussed in this paper.

Effects of Bias on the Bonding Structure and Mechanical Property of a-C:H Films Deposited by MFPUMST

2012 ◽  
Vol 507 ◽  
pp. 38-43
Author(s):  
Hui Jiang ◽  
Hai Yang Dai ◽  
Ning Kang Huang
Keyword(s):  
Mechanical Property ◽  
Bias Voltage ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Bonding Structure ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Hardness Increase ◽  
Hydrogenated Amorphous ◽  
Mixed Gases

Hydrogenated amorphous carbon (a-C:H) films on silicon wafers were prepared by middle frequency pulsed unbalanced magnetron sputtering technique (MFPUMST) at different substrate bias under the methane-argon mixed gases. Raman spectra show that the sp3 fraction in a-C:H films increases with increasing substrate bias voltage from 0 to 100 V, and then decreases when the substrate bias above 100 V. Nano-hardness for these films prepared under different substrate bias voltage show that nano-hardness increase with increasing substrate bias voltage from 0 to 100 V, and then decrease from 100 up to 200 V. The results above indicate that the sp3 fraction in the prepared a-C:H films is directly related to nano-hardness, therefore, substrate bias voltage is an important factor for influence on the bonding configuration of the deposited a-C:H films. The related mechanism is discussed by sub-plantation model in this paper.

Influence of the Substrate Bias Voltage on the Structure of Rutile TiO2 Films Prepared by Dual Cathode DC Unbalanced Magnetron Sputtering

2012 ◽  
Vol 506 ◽  
pp. 82-85
Author(s):  
P. Kasemanankul ◽  
N. Witit-Anun ◽  
S. Chaiyakun ◽  
P. Limsuwan
Keyword(s):  
Crystal Structure ◽  
Magnetron Sputtering ◽  
Grazing Incidence ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Force Microscopy ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Xrd Patterns ◽  
Deposited Films

Rutile TiO2 films are normally used as biomaterial that synthesized on unheated stainless steel type 316L and glass slide substrates by dual cathode DC unbalanced magnetron sputtering. The influence of the substrate bias voltages (Vsb), from 0 V to-150V, on the structure of the as-deposited films was investigated. The crystal structure was characterized by grazing-incidence X-ray diffraction (GIXRD) technique, the films thickness and surface morphology was evaluated by atomic force microscopy (AFM) technique, respectively. The results show that the as-deposited films were transparent and have high transmittance in visible regions. The crystal structure of as-deposited films show the XRD patterns of rutile (110) with Vsb at 0V and shifted to rutile (101) with increasing Vsb. The films roughness (Rrms) and the thickness were 3.0 nm to 5.7 nm and 420 nm to 442 nm, respectively.

Nano-Structured CrN/CNx Multilayer Films

2007 ◽  
Vol 334-335 ◽  
pp. 893-896 ◽  
Author(s):  
A. Vyas ◽  
Yao Gen Shen ◽  
Zhi Feng Zhou ◽  
K.Y. Li
Keyword(s):  
Mechanical Properties ◽  
Multilayer Films ◽  
Closed Field ◽  
X Ray Diffraction ◽  
Substrate Bias Voltage ◽  
Force Microscopy ◽  
Unbalanced Magnetron Sputtering ◽  
Atomic Force ◽  
Transmission Electron ◽  
Unbalanced Magnetron

CrN/CNx nano-scale multilayered films were deposited on Si (100) substrate by closed-field unbalanced magnetron sputtering. Designed experimental parameters enabled an evaluation of the effects of negative substrate bias voltage (Vb), and bi-layer thickness λ (by changing substrate rotation rate) during deposition on the structural and mechanical properties of multilayer films. These multilayers were characterized and analyzed by transmission electron microscope (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and nanoindentation measurements. In all cases, the CNx layers were amorphous and independent of Vb, while the microstructures of the CrN layers were dependent primarily on Vb. The CrN layers showed a mixed structure phase consisting of CrN, Cr2N, and Cr at Vb = -(40-120) V. At higher Vb values (-140 V or above), the Cr2N phase was dominant along with low CrN phase content. AFM measurements revealed that the root-mean-square (rms) surface roughness of the CrN/CNx film was 2 nm at Vb= -200 V whereas the rms values were about 9.5-3.3 nm for lower Vb values of -(40-180 V). By nanoindentation measurements, a maximum hardness of about 36 GPa was observed at Vb= -140 V. The improved mechanical properties of the films are correlated to the phase formation during deposition.

Characteristics of Palladium Doped Amorphous Carbon Films Fabricated by Unbalanced Magnetron Sputtering System

2021 ◽  
Vol 16 (6) ◽  
pp. 905-910
Author(s):  
Yong Seob Park ◽  
Young-Baek Kim ◽  
Sung Hwan Hwang ◽  
Jaehyeong Lee
Keyword(s):  
Friction Coefficient ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Amorphous Carbon ◽  
Closed Field ◽  
Hydrogenated Amorphous Carbon ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron ◽  
Dc Bias ◽  
Hydrogenated Amorphous

Generally, hydrogenated amorphous carbon (a-C:H) has been shown to have a low friction coefficient, high hardness, and low abrasive wear rate. In this study, Pd doped hydrogenated amorphous carbon (a-C:H:Pd) fabricated by the closed-field unbalanced magnetron sputtering (CFUBMS) system with two targets of carbon and palladium in Ar/C2H2 plasma. The tribological and lubricant characteristics for a-C:H:Pd fabricated with various DC bias voltage from 0 to −200 V were investigated. We obtained a hardness up to 27.5 GPa and friction coefficient lower than 0.1. The atomic percentage of Pd related to the lubricant properties increased up to 22% at −200 V. In the results, the Pd doping in the a-C:H films improved the tribological and lubricant properties. The friction coefficient value of a-C:H:Pd films was decreased, the hardness and elastic modulus were increased, and also the adhesion properties was improved with the increase of negative DC bias voltage.

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