Effect of dispersed Ag on the dielectric properties of sol–gel derived PbTiO3 thin films on ITO/glass substrate

2003 ◽  
Vol 167 (2-3) ◽  
pp. 177-180 ◽  
Author(s):  
Liwen Tang ◽  
Piyi Du ◽  
Gaorong Han ◽  
Wenjian Weng ◽  
Gaoling Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Glass Substrate ◽  
Sol Gel ◽  
Ito Glass

Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 283-286 ◽  
Author(s):  
Zan Zheng ◽  
Xiao Ting Li ◽  
Gao Rong Han ◽  
Wen Jian Weng ◽  
Pi Yi Du
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Phase Structure ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Dip Coating ◽  
In Doping ◽  
Ito Glass ◽  
Coating Method ◽  
Dip Coating Method

(PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology, and dielectric properties of thin films were investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phase structure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of the perovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant of the thin film was influenced by oxygen vacancies which could be controlled by Zn doping.

FERROELECTRIC PROPERTIES OF CaBi4Ti4O15 THIN FILMS ON ITO/GLASS SUBSTRATES PREPARED BY SOL-GEL TECHNOLOGY

2012 ◽  
Vol 06 ◽  
pp. 91-97
Author(s):  
CHIEN-MIN CHENG ◽  
MING-CHANG KUAN ◽  
KAI-HUNAG CHEN ◽  
JEN-HWAN TSAI
Keyword(s):  
Thin Films ◽  
Leakage Current Density ◽  
Current Density ◽  
Coercive Field ◽  
Glass Substrate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Electrical Field ◽  
Glass Substrates ◽  
Ito Glass

In this study, ferroelectric CaBi 4 Ti 4 O 15 (CBT) thin films prepared by sol-gel method and deposited on ITO/glass substrates for applications in system-on-panel (SOP) devices were fabricated and investigated. The electrical and physical characteristics of as-deposited and annealed CBT thin films for metal-ferroelectric-metal (MFM) structures was discussed and investigated. In addition, the ferroelectric properties in annealed CBT thin films on ITO/glass substrate showed and exhibited clear polarization versus electrical field curves. From p - E curves, the 2 P r value and coercive field of annealed CBT thin films were calculated to be 10μC/cm2 and 180 kV/cm, respectively. Finally, the maximum capacitance, leakage current density, and transmittance within the ultraviolet-visible (UV–vis) spectrum were also investigated and discussed.

Surface Morphological Study of Lead Titanate Thin Films Prepared on ITO Glass Substrate

2015 ◽  
Vol 1109 ◽  
pp. 466-470 ◽  
Author(s):  
Nurbaya Zainal ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Glass Substrate ◽  
Lead Titanate ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Force Microscopy ◽  
Atomic Force ◽  
Ito Glass ◽  
Coating Method

The most important thing in preparing thin films ceramic material such lead titanate, PbTiO3 is the behavioral of microstructural changes due to the applying heat treatment during crystallization process. In general, the imperfection of PbTiO3 surface morphology such as porosity, grain boundaries, existence of microcrack films, films out-diffusion and others are caused by this factor, heat transfer element and found very interesting to be discussed towards next electrical characterization. However, the present study only focuses on the surface morphology of PbTiO3 thin films that observed by both field emissions scanning electron microscopy (FESEM) and atomic force microscopy (AFM). The details of measurement for observation will be explained later. The preparation of PbTiO3 thin films were done trough simple sol-gel spin coating method deposited on ITO coated glass substrate.

STRUCTURE AND DIELECTRIC PROPERTIES OF La-DOPED LEAD STRONTIUM TITANATE THIN FILMS DERIVED FROM SOL–GEL METHOD

2008 ◽  
Vol 15 (01n02) ◽  
pp. 13-18
Author(s):  
X. T. LI ◽  
C. WU ◽  
W. J. WENG ◽  
G. R. HAN ◽  
P. Y. DU
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Perovskite Phase ◽  
Sol Gel ◽  
Dielectric Constants ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Ito Glass ◽  
Gel Technique ◽  
La Doped

A series of ( Pb 0.4 Sr 0.6)1-x La 2x/3 TiO 3 (PSLT) thin films were deposited on ITO/glass substrates by sol–gel technique. Their phase status, surface morphology, and dielectric properties were studied by X-ray diffraction, scanning electron microscope, and impedance analyzer, respectively. Results show that the PSLT thin films were consisted of tetragonal perovskite phase PSLT thin films for x < 0.4, and cubic perovskite phase PSLT thin films for x > 0.4. Dielectric properties such as dielectric constants, dielectric tunabilitis, and inharmonic coefficient were characterized as a function of the film composition.

Resistive Switching Behaviors of Sol-Gel-Derived MgNb2 O6 Thin Films on ITO/glass Substrate

2014 ◽  
Vol 97 (11) ◽  
pp. 3544-3548 ◽  
Author(s):  
Yi-Da Ho ◽  
Kung-Rong Chen ◽  
Cheng-Liang Huang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Glass Substrate ◽  
Sol Gel ◽  
Ito Glass

The Effects of the Annealing Conditions on the Dielectric Properties of the Sol-Gel Derived MgNb2O6 Thin Films

2014 ◽  
Vol 90 ◽  
pp. 7-11
Author(s):  
Yi Da Ho ◽  
Kung Rong Chen ◽  
Cheng Liang Huang
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Integrated Circuits ◽  
Band Gap ◽  
Optical Band Gap ◽  
Sol Gel ◽  
Visible Range ◽  
Annealing Conditions ◽  
Ito Glass

MgNb2O6, a well-known ceramic material with columbite crystal structure, has attracted much attention in microwave integrated circuits and optical applications due to its superior properties, such as its high dielectric constant and an optical band gap. In this work, transparent amorphous-MgNb2O6thin films were fabricated on ITO/glass substrates using the sol-gel method. The average optical transmission percentage in the visible range (λ=400–800 nm) is over 80% for all MgNb2O6/ITO/glass samples, while the optical band gap is estimated at ~4 eV. On the other hand, the dielectric properties of the MgNb2O6thin films were very sensitive to the annealing conditions. In this study, the dielectric constant of the films was calculated to be higher than 30 under a 100 kHz AC electric field. The effects of the annealing temperature and atmosphere on the dielectric properties of the MgNb2O6thin films were investigated.

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