Electric field-induced redistribution of free carriers at isotype (In,Ga)P/GaAs interfaces

2002 ◽  
Vol 88 (2-3) ◽  
pp. 129-133 ◽  
Author(s):  
P Krispin ◽  
A Knauer ◽  
S Gramlich
Keyword(s):  
Electric Field ◽  
Free Carriers

scholarly journals Спектры остаточной фотопроводимости в гетероструктурах с квантовыми ямами HgTe/CdHgTe

2019 ◽  
Vol 53 (10) ◽  
pp. 1401
Author(s):  
К.Е. Спирин ◽  
Д.М. Гапонова ◽  
В.И. Гавриленко ◽  
Н.Н. Михайлов ◽  
С.А. Дворецкий
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Carrier Concentration ◽  
Significant Role ◽  
General Trend ◽  
Persistent Photoconductivity ◽  
Free Carriers ◽  
Conductivity Type ◽  
P Type ◽  
Type Sample

Spectra of persistent photoconductivity (PPC) in HgTe/CdHgTe quantum well (QW) heterostructures of both n- and p-types have been investigated at T = 4.2 K. PPC is shown to be either positive (increase of carrier concentration in QW) or negative depending on a wavelength of the illumination. As a general trend, PPC maxima in n-type sample correspond to PPC minima in p-type samples and vice versa. It is discovered that in p-type samples the illumination with certain wavelengths results in the freezing out of free carriers in QWs but not in the conversion of the conductivity type. The latter indicates a significant role in the PPC mechanism of the built-in electric field that is switching off at the QW neutralization.

Impact Ionization of Free and Bound Excitons by Free Carriers in an Electric Field in CdS. Investigation by Optical Methods

1990 ◽  
Vol 161 (1) ◽  
pp. 395-404 ◽  
Author(s):  
M. A. Jakobson ◽  
V. D. Kagan ◽  
R. Katilius ◽  
G. O. Müller
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Optical Methods ◽  
Free Carriers

Determination of Diffusion Coefficient of Impurity Ions in a Crystal from their Drift Under Electric Field

1998 ◽  
Vol 548 ◽  
Author(s):  
A.A. Akopyan ◽  
V.V. Kislyuk ◽  
G.S. Pekar
Keyword(s):  
Experimental Data ◽  
Diffusion Coefficient ◽  
Electric Field ◽  
Ion Mobility ◽  
Time History ◽  
Stationary Problem ◽  
Concentration Profiles ◽  
Free Carriers ◽  
Impurity Ions

ABSTRACTWe studied the drift of Cd interstitials in CdS single crystals at an electric field applied to the crystal. These atoms are totally ionized at moderate temperatures of the investigation (300 - 400 K). Mobile Cd ions drift from the anode to the cathode. A time-dependence was studied experimentally for the voltage dropped on the crystal at the constant value of the current passed through the sample. A non-stationary problem developed for the transient process allowed to derive the ion mobility in such a process from the experimental data. Concentration profiles and their time history were investigated in detail for the ions and free carriers.

Photoreflectance Characterization of InGaAs/GaAs Superlattices Grown on [111]-Oriented Substrates

1993 ◽  
Vol 324 ◽  
Author(s):  
R. G. Rodrigues ◽  
K. Yang ◽  
L. J. Schowalter ◽  
J. M. Borrego
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Photovoltaic Effect ◽  
Quantum Structures ◽  
Optical Transitions ◽  
Linear Absorption ◽  
Free Carriers ◽  
Gaas Substrates ◽  
Surface Electric Field

AbstractWe report the results of a photoreflectance (PR) study of InGaAs/GaAs strained-layer quantum wells and superlattices (SLSs) grown by MBE on [111]B GaAs substrates. Under our measurement conditions, the PR spectra display features we can relate to the bandgaps of both materials and to optical transitions in the quantum structures. Using the photovoltaic effect to vary the surface electric field of our i-n+ and p+-i-n+ samples in a strictly contactless manner, we find optical transitions red-shifting with increasing intensity of illumination from a CW HeNe laser in [111]-grown structures, a well known effect which can be attributed to the straingenerated electric field (SGEF) present in these structures. We also find experimental support for the predicted effectiveness of free-carriers in screening the SGEF and thereby originating highly non-linear absorption.

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