1.54 μm Light emitting devices based on Er/O-doped Si layered structures grown by molecular beam epitaxy
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1993 ◽
Vol 32
(Part 2, No. 12A)
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pp. L1725-L1727
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2001 ◽
Vol 40
(Part 1, No. 6A)
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pp. 3953-3959
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2000 ◽
Vol 18
(3)
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pp. 1720
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1998 ◽
Vol 51
(1-3)
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pp. 94-98
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1995 ◽
Vol 13
(2)
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pp. 746
2010 ◽
Vol 4
(1-2)
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pp. 49-51
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2014 ◽
Vol 11
(7-8)
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pp. 1282-1285
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