Inversion layer solar cells on chemically vapor‐deposited polycrystalline silicon thin films

1984 ◽  
Vol 55 (4) ◽  
pp. 1183-1187 ◽  
Author(s):  
E. P. Burte ◽  
R. Hezel
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Inversion Layer ◽  
Silicon Thin Films ◽  
Chemically Vapor Deposited

Polycrystalline Silicon Thin Films on SiC Substrates for Solar Cells

2007 ◽  
Vol 280-283 ◽  
pp. 1147-1148 ◽  
Author(s):  
Hai Feng Li ◽  
Yong Huang ◽  
Zhi Jian Wan ◽  
Hou Xing Zhang ◽  
Li Ming Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Chemical Treatment ◽  
Polycrystalline Silicon ◽  
Crystal Size ◽  
Ultrasonic Method ◽  
Preferred Orientation ◽  
Silicon Thin Films ◽  
Columnar Grain

The thin-film of silicon deposited by RTCVD on pressureless sintered SiC substrate with the size of 30mm×20mm, which is cleaned by ultrasonic method and chemical treatment. The crystal size of silicon columnar grain can reach 190 µm and its preferred orientation is [111] after ZMR process.

Polycrystalline silicon thin films and solar cells prepared by rapid thermal CVD

1997 ◽  
Vol 48 (1-4) ◽  
pp. 321-326 ◽  
Author(s):  
Yuwen Zhao ◽  
Zhongming Li ◽  
Saoqi He ◽  
Xianbo Liao ◽  
Shuran Sheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Thermal Cvd ◽  
Silicon Thin Films

EELS microanalysis of polycrystalline silicon thin films for solar cells grown at low temperatures

2000 ◽  
Vol 63 (2) ◽  
pp. 177-184 ◽  
Author(s):  
Michael Stöger ◽  
Michael Nelhiebel ◽  
Peter Schattschneider ◽  
Viktor Schlosser ◽  
Alexander Breymesser ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperatures ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Polycrystalline Silicon Thin Films on SiC Substrates for Solar Cells

2007 ◽  
pp. 1147-1148 ◽  
Author(s):  
Hai Feng Li ◽  
Yong Huang ◽  
Zhi Jian Wan ◽  
Hou Xing Zhang ◽  
Li Ming Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Fabrication of an ant-nest nanostructure in polycrystalline silicon thin films for solar cells

2014 ◽  
Vol 92 ◽  
pp. 27-30 ◽  
Author(s):  
Chaowei Xue ◽  
Jialiang Huang ◽  
Jing Rao ◽  
Sergey Varlamov
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films ◽  
Ant Nest

Advanced silicon thin films for high-efficiency silicon heterojunction-based solar cells

2017 ◽  
Author(s):  
A. Descoeudres ◽  
J. Geissbiihler ◽  
J. Horzel ◽  
A. Lachowicz ◽  
J. Levrat ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
High Efficiency ◽  
Silicon Thin Films

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (27) ◽  
pp. 1739-1747 ◽  
Author(s):  
QINGSONG LEI ◽  
ZHIMENG WU ◽  
XINHUA GENG ◽  
YING ZHAO ◽  
JIANPING XI
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transition Region ◽  
Chemical Vapor ◽  
Transition Process ◽  
Very High Frequency ◽  
Working Pressure ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Narrow Region

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

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