scholarly journals Cryogenically-cooled, HEMT amplifiers and receivers in 1-50 GHz range: state-of-the-art

1991 ◽  
Vol 131 ◽  
pp. 60-64
Author(s):  
Marian W. Pospieszalski
Keyword(s):  
Radio Astronomy ◽  
Electron Mobility ◽  
State Of The Art ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Recent Developments ◽  
And Performance ◽  
Design Construction

AbstractA review of the recent developments in the design, construction and performance of cryogenicallycoolable, high-electron-mobility transistor (HEMT, MODFET) amplifiers and their application in compact cryogenic receivers for radio astronomy applications is presented.

scholarly journals A modeling and performance of the triple field plate HEMT

2019 ◽  
Vol 10 (1) ◽  
pp. 398
Author(s):  
Kourdi Zakarya ◽  
Abdelkhader Hamdoun
Keyword(s):  
Aluminum Oxide ◽  
High Power ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Field Plate ◽  
Field Peak ◽  
And Performance ◽  
Multiple Field

We present this work by two steps. In the first one, the new structure proposed of the FP-HEMTs device (Field plate High Electron Mobility Transistor) with a T-gate on an 4H-SIC substrate to optimize these electrical performances, multiple field-plates were used with aluminum oxide to split the single electric field peak into several smaller peaks, and as passivation works to reduce scaling leakage current. In the next, we include a modeling of a simulation in the Tcad-Silvaco Software for realizing the study of the influence of negative voltage applied to gate T-shaped in OFF state time and high power with ambient temperature, the performance differences between the 3FP and the SFP devices are discussed in detail.

AlGaN/GaN High Electron Mobility Transistor Structures: Self-Heating Effect and Performance Degradation

2008 ◽  
Vol 8 (3) ◽  
pp. 543-548 ◽  
Author(s):  
Svetlana A. Vitusevich ◽  
Andrey M. Kurakin ◽  
Norbert Klein ◽  
Mykhailo V. Petrychuk ◽  
Andrey V. Naumov ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Performance Degradation ◽  
High Electron ◽  
Heating Effect ◽  
High Electron Mobility ◽  
Self Heating ◽  
And Performance

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode
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