Ion Beam Induced Phase Transitions in Nickel and Cobalt thin Films on Silicon

1982 ◽  
Vol 40 ◽  
pp. 730-731
Author(s):  
L.J. Chen ◽  
T.T. Chang ◽  
C.Y. Hou ◽  
J.W. Mayer
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Surface Composition ◽  
Ion Beam ◽  
Metal Thin Films ◽  
Vlsi Technology ◽  
Composition And Structure ◽  
Potential Applications ◽  
Cobalt Thin Films ◽  
Atomic Mixing

Ion implantation metallurgy has received increasing attention because of its important applications in the modification of surface composition and structure of materials. Relatively low dose ion beam material modification can be achieved by ion-beam induced atomic mixing between thin film and its substrate. Ion beam mixing of metal thin films on silicon is by far the most widely studied system for its potential applications in VLSI technology. In this paper, we report the results of ion beam induced phase transitions in nickel and cobalt thin films on silicon.

Submicron Patterned Anodic Oxidation of Aluminum Thin Films

2000 ◽  
Vol 636 ◽  
Author(s):  
Qiyu Huang ◽  
Whye-Kei Lye ◽  
David M. Longo ◽  
Michael L. Reed
Keyword(s):  
Thin Films ◽  
Anodic Oxidation ◽  
Ion Beam ◽  
Electrochemical Anodization ◽  
Optical Methods ◽  
Imprint Lithography ◽  
Aluminum Films ◽  
Aspect Ratios ◽  
Potential Applications ◽  
Nano Imprint

AbstractAlumina formed by the electrochemical anodization of bulk aluminum has a regular porous structure [1]. Sub-100 nm pores with aspect ratios as high as 1000:1 can easily be formed [2] without elaborate processing. Anodization of aluminum thus provides the basis for the inexpensive, high throughput microfabrication of structures with near vertical sidewalls [2]. In this work we explore the patterned anodic oxidation of deposited aluminum thin films, facilitating the integration of this technique with established microfabrication tools. An anodization barrier of polymethylmethacrylate (PMMA) is deposited onto 300 nm thick aluminum films. The barrier film is subsequently patterned and the exposed aluminum anodized in a 10% sulfuric acid solution. Barrier patterning techniques utilized in this study include optical exposure, ion-beam milling and nano-imprint lithography. Sharp edge definition on micron scale patterns has been achieved using optical methods. Extension of this technique to smaller dimensions by ion-beam milling and nano-imprint lithography is presented. We further report on the observation of contrast reversal of anodization with very thin PMMA barriers, which provides a novel means of pattern transfer. Potential applications and challenges will be discussed.

Surface composition and structure of nickel ultra-thin films deposited on Pd(111)

2007 ◽  
Vol 156-158 ◽  
pp. 405-408 ◽  
Author(s):  
M.F. Carazzolle ◽  
S.S. Maluf ◽  
A. de Siervo ◽  
P.A.P. Nascente ◽  
R. Landers ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Composition ◽  
Composition And Structure

Delamination and Buckling Induced by Compressive Strain in Metal Thin Films

2005 ◽  
Vol 490-491 ◽  
pp. 655-660 ◽  
Author(s):  
Yao Gen Shen
Keyword(s):  
Thin Films ◽  
Pattern Formation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Compressive Strain ◽  
Ex Situ ◽  
Metal Thin Films ◽  
Force Microscopy ◽  
Steady Growth ◽  
Sputter Deposited

The pattern formation during delamination and buckling in sputter-deposited tungsten thin films under large compressive stresses was investigated. The films were analyzed in situ by a cantilever beam technique, and ex situ by atomic force microscopy (AFM) and focused ion beam. Depending on the magnitude of compressive strain in thin films, different types of buckling patterns were observed. For stresses above a critical value, there was a regime of steady growth in which the incipient blister evolves into a regular sinusoidal-like propagation. At higher strains, the sinusoidallike wrinkles were developed with constant widths and wavelengths. Some of the wrinkles bifurcated to form branches. With further increase in stress the complicated buckling patches were formed with many irregular lobes. These types of pattern formation have been supported by elastic energy calculations.

Surface composition and structure of palladium ultra-thin films deposited on Ni(111)

2006 ◽  
Vol 600 (11) ◽  
pp. 2268-2274 ◽  
Author(s):  
M.F. Carazzolle ◽  
S.S. Maluf ◽  
A. de Siervo ◽  
P.A.P. Nascente ◽  
R. Landers ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Composition ◽  
Composition And Structure

Interfacial Reactions of Nickel and Cobalt thin Films on Silicon

1982 ◽  
Vol 40 ◽  
pp. 630-631
Author(s):  
L.J. Chena ◽  
C.Y. Hou ◽  
T.T. Chang
Keyword(s):  
Thin Films ◽  
Lattice Mismatch ◽  
Metal Silicide ◽  
Metal Thin Films ◽  
Practical Applications ◽  
Annealing Temperatures ◽  
Factors Influencing ◽  
Small Lattice ◽  
Cobalt Thin Films ◽  
Cobalt Silicides

The interactions of metal thin films with silicon has been of great interest for its practical applications as means of forming metal silicide contacts in microelectronic industry. Nickel and cobalt thin films on silicon share many important similarities. Firstly, both Ni and Co are transition metals. Secondly, both Ni and Co atoms are found to be dominant moving species during thin film reactions. Thirdly, the formation of silicides follows the sequence of Ni2 (Co2 )Si, Ni(Co)Si and Ni(Co)Si2 with increasing annealing temperatures. Fourthly, both Nisi2 and CoSi2 have a CaF2 structure with small lattice mismatch (< 1.1 %) with silicon and are known to grow epitaxially on low index planes of Si. In this study, we report the results of our study on the factors influencing the formation and growth of nickel and cobalt silicides on silicon.

Grain Growth in Nanocrystalline Metal Thin Films under In Situ Ion-Beam Irradiation

2007 ◽  
Vol 4 (8) ◽  
pp. 100743 ◽  
Author(s):  
D. Kaoumi ◽  
A. T. Motta ◽  
R. C. Birtcher ◽  
R. Lott ◽  
S. W. Dean
Keyword(s):  
Thin Films ◽  
Grain Growth ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Nanocrystalline Metal ◽  
Metal Thin Films

Laser Induced High-Strain-Rate Superplastic 3D Micro-Forming of Metallic Thin Film

2009 ◽  
Author(s):  
Huang Gao ◽  
Gary J. Cheng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Thickness ◽  
Strain Rate ◽  
Focused Ion Beam ◽  
Laser Intensity ◽  
Ion Beam ◽  
Micro Forming ◽  
Forming Process ◽  
Metal Thin Films

Microforming of metals has always been a challenge because of the limited formability of metals at micro-scales. This paper investigates an innovative micro-forming technique: Laser Dynamic Forming (LDF), which induces 3-D superplastic forming in metal thin films. This forming process proceeds in a sequence of laser irradiation of ablative coating, ionization, shockwave generation and propagation in metal thin films, and conformation of metal thin films to the shape of micro/nanoscale molds. Because the deformation proceeds at ultrahigh strain rate, it is found that materials experience superplastic deformation at microscales. In this paper, experiments are carried out to understand the deformation characteristics of LDF. The shapes of the formed samples are characterized by scanning electron microscopy (SEM) and optical profilometer. The thickness variations are characterized by slicing the cross section using focused ion beam (FIB). The magnitude of deformation depth in LDF is determined primarily by three critical factors: thin film thickness, geometry of molds, and laser intensity. The relationships between laser intensity, film thickness, and mold size are explored in process maps to find out suitable processing conditions of LDF. Nanoindentation testings are conducted to show that the mechanical properties (hardness and yield strength) are increased significantly after LDF.

scholarly journals Sample preparation induced phase transitions in solution deposited copper selenide thin films

RSC Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 277-284
Author(s):  
Bar Koren ◽  
Ofir Friedman ◽  
Nitzan Maman ◽  
Shmuel Hayun ◽  
Vladimir Ezersky ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transitions ◽  
Sample Preparation ◽  
Ion Beam ◽  
Copper Selenide ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Dual Beam

Ion beam irradiation causes Klockmannite CuSe to lose Se and transform into β-Cu2Se. Caution must be taken when using the dual beam FIB for preparing TEM specimen.

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