Applications of the Scanning Electron Microscope on Active Semiconductor Devices

Author(s):  
Robert D. Dobrott

The scanning electron microscope is rapidly becoming an extremely powerful tool for studying active semiconductor devices. This tool gives an essentially non-destructive means of studying both the bulk and surface electrical characteristics of the device under high magnification. The mapping of electrical potential gradients on the surface of a device under bias is a valuable aid in reliability prediction as well as failure anal-sis of completely non-working or marginally operating devices. Bulk properties (i.e. p-n or isolation junctions) can be studied in the scanning microscope using the specimen conductive mode. This paper will be restricted to the surface potential gradients using the emissive mode(secondary electron signal) for image display.

Author(s):  
A. A. Pivovarchyk ◽  
Е. V. Pivovarchyk

The article presents the results of a research of the chemical composition of brass foundry grade LS, supplied by domestic and foreign producers, as well as the chemical composition of brass lead grade LC4C used for the manufacture of stop valves. The research was made with use of optical emission spectrometers of various models and a scanning microscope. It was established that the pig delivered by the domestic producers corresponds to parameters of chemical composition for the pig’s foundry brand LS, while in the pig supplied by foreign producers there were found disparities of the chemical composition of certain basic elements. The results of the studies showed that the pig supplied by all producers, as well as the melt obtained with its use, contain in its composition such harmful impurities as S, Bi and P in the amount of 0.001%, 0.0017% and 0.0045%, respectively, that can lead to a decrease in the technological properties of products. It has been established that the use of ARL 3460 and OBLF-QSW 750 emission spectrometers and the Tescan VEGA II LMU scanning electron microscope makes it possible to obtain practically identical values of the content of the main elements and impurities in pigs of foundry and brass lead grade LC40C in studies on determining the chemical composition of the materials under study. 


1975 ◽  
Vol 23 (1) ◽  
pp. 107 ◽  
Author(s):  
S Zee

Structural features of the tissues of the pigment strand in the caryopsis of wheat were studied by means of the scanning electron microscope.


In this paper, corrosion in overhead line foundations in different field environmental conditions (plain, agricultural and coastal/industrial region) have been detected by non-destructive test methods such as Half-cell potential test, Ultrasonic pulse velocity test, Rebound hammer test, chemical analysis of soil and Transmission Line Tower (TLT) footing concrete samples and scanning electron microscope (SEM) analysis of deteriorated tower footing concrete. The collected soil samples have been analyzed for chemicals and the TLT coping concrete samples have been tested using scanning electron microscope. The correlation between the test values, mineralogical composition of soil and concrete samples at tower footing level is presented.


2013 ◽  
Vol 21 (4) ◽  
pp. 24-28 ◽  
Author(s):  
Kenny C. Witherspoon ◽  
Brian J. Cross ◽  
Mandi D. Hellested

Energy-dispersive X-ray spectrometry (EDS) is an analytical technique used to determine elemental composition. It is a powerful, easy-to-use, non-destructive technique that can be employed for a wide variety of materials. In this technique the electron beam of the scanning electron microscope (SEM) impinges on the sample and excites atomic electrons causing the production of characteristic X rays. These characteristic X rays have energies specific to elements in the sample. The EDS detector collects these X rays as a signal and produces a spectrum. Samples also can be excited by X rays. Collimated and focused X rays from an X-ray source produce characteristic X rays that can be detected by the same EDS detector. When X rays are used as the source of excitation, the method is then called X-ray fluorescence (XRF) or micro-XRF.


1997 ◽  
Vol 3 (S2) ◽  
pp. 497-498
Author(s):  
E I Rau ◽  
VNE Robinson

Multi layer structures are widely used in micro electronics devices and visualisation of their sub surface layers is important to understand the nature and properties of these devices. One of the more common methods of sub surface imaging is ion beam milling, in which sections of the overlaying material are removed to reveal sub surface details. Some disadvantages of this technique are that the equipment required is expensive and the technique is destructive. Another technique is to image a device at different accelerating voltages and determine at which voltage a particular feature is first detected. A major disadvantage of this technique is that the underlying layers are always observed partially obscured by the overlaying material. The development of a non destructive technique for three dimensional characterisation of electronic, physical, compositional and/or topological properties of these structures could be useful.One such technique is micro tomography using the backscattered electron (BSE) signal in the scanning electron microscope SEM [1].


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