Ultra-high resolution chemical analysis by field-ion atom probe/position sensitive atom probe techniques
The use of field ion microscopy based techniques in the study of the structure and chemistry of metallic and semiconducting materials with very high resolution is now well documented. The particular features of these techniques which result in the achievement of very high spatial resolution in images and chemical profiles are; the intrinsic magnification in a conventional field ion microscope of at least 106, the plane-by-plane desorption characteristic of field evaporation processes, and the excellent chemical specificity in a modern atom probe. In addition, we have developed in Oxford a new detector system for field ion based equipment in which both the chemical identity of evaporated ions and the position on the sample surface from which they were evaporated can be established. This allows the reconstruction of the evaporated volume in three dimensions, and this technique has been christened the Position Sensitive Atom Probe, POSAP. This abstract presents the results of two typical experiments illustrating the very high quality of the chemical data that can be obtained in both conventional atom probe and POSAP facilities.