Deposition and anneal behavior of Al-1.5%Cu films: TEM characterization

1991 ◽  
Vol 49 ◽  
pp. 884-885
Author(s):  
N. David Theodore ◽  
Mike Dreyer ◽  
Charles Varker
Keyword(s):  
Integrated Circuits ◽  
Imaging Techniques ◽  
Dark Field ◽  
Time To Failure ◽  
Plan View ◽  
Cu Films ◽  
Transmission Electron ◽  
Grain Size Distributions ◽  
The Mean ◽  
Mean Time

Al-1.5%Cu materials are of interest for interconnect-metallization in semiconductor integrated-circuits. It is known from the literature that the mean-time-to-failure (MTF) due to electromigration of the Al-1.5%Cu interconnects depends on the microstructure of the materials. A correlation is seen for instance between grain-size distributions in the material and the MTF. Uniform large-grained distributions improve lifetime. The present study evaluated the microstructure of Al-1.5%Cu films deposited and annealed under different conditions.Al-1.5%Cu films had been deposited at 25°C and at 300°C; the layers had then been annealed at 300°C for 17 hours, prior to TEM investigation. Plan-view TEM specimens were prepared in the 100 substrategeometry, and cross-section TEM specimens were prepared in the 110 substrate-geometry. These were then analyzed using bright-field and dark-field TEM imaging techniques. A JEOL JEM 200CX transmission electron microscope was used for the investigation, operating at 200 kV.

A correlative study of microstructure and surface topography in Al-1.5%Cu films

1992 ◽  
Vol 50 (2) ◽  
pp. 1418-1419
Author(s):  
N. David Theodore ◽  
Bea Cao ◽  
Juan Carrejo ◽  
Peter A. Crozier
Keyword(s):  
Integrated Circuits ◽  
Surface Topography ◽  
Imaging Techniques ◽  
Dark Field ◽  
Material Surface ◽  
Silicon Dioxide Layer ◽  
Plan View ◽  
Cu Films ◽  
Transmission Electron ◽  
Multi Level

Al(Cu) is currently being used for interconnects in semiconductor integrated-circuits. Problems that arise with use of the material are electromigration, stress-migration, and corrosion. Electromigration and stress-migration behaviors of the films are known to depend on grain-sizes and distributions in the material. Surface topography of the films could possibly affect stress-migration as well as use of the material in multi-level metallization schemes. The present study investigates the extent of correlation between microstructure and surface topography in Al-1.5%Cu films.Substrates used for this study consisted of (100) silicon wafers with a 200 nm silicon-dioxide layer on top. Al(1.5%Cu) was sputtered onto the substrates; substrates were held at a temperature of 450°C during sputtering. Layer thicknesses were ∼740 nm. Scanning electron-microscopy was performed using a Cambridge 250-MK III SEM equipped with a heating stage. Plan-view TEM specimens were prepared in the 100 substrate-geometry. These were then analyzed using bright-field and dark-field TEM imaging techniques. A JEOL JEM 200CX transmission electron microscope was used for the investigation, operating at 200 kV.

Electromigration in Epitaxial Copper Lines

2000 ◽  
Vol 648 ◽  
Author(s):  
H.S. Goindi ◽  
C.S. Shin ◽  
M. Frederick ◽  
Y. Shusterman ◽  
H. Kim ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Constant Current ◽  
Time To Failure ◽  
Constant Current Density ◽  
X Ray ◽  
Cu Films ◽  
Interfacial Layers ◽  
Mean Time ◽  
Defect Densities ◽  
Lower Electrical Resistivity

AbstractCopper is becoming the metal of choice for interconnect applications in integrated circuits due to its lower electrical resistivity and higher electromigration (EM) resistance. The effects of grain size, preferred orientation, and interfacial layers, on electromigration in Cu lines are, however, not yet well understood. In this paper, we compare the EM characteristics of epitaxial Cu(111) lines with that of polycrystalline lines with a (111) texture. We also investigate the effects of Ta, TaN and TiN interfacial underlayers and Cu crystal quality on the EM response of epitaxial Cu(001) lines. EM tests were carried out on 2-μm-wide Cu lines at a constant current density between 0.02 and 3.5 MA/cm2 in an Ar ambient at 300 °C. Our results indicate that EM resistance of both (111) and (001) epitaxial lines have a higher mean time to failure (MTTF) than polycrystalline Cu lines. The presence of a TiN or TaN interfacial layer increases the MTTF in Cu(001) films, while a Ta underlayer degrades EM resistance. X-ray diffractograms indicating a smaller full-width-at-half-maximum of Cu(001) films on nitride underlayers suggest that lower defect densities in these Cu films is the likely reason for improved EM resistance. Both (111) and (100) orientations fail by formation of faceted voids.

Hinge Sensitivity in a Micro-Rotating Structure for predicting Induced Thermo Mechanical Stress in Integrated Circuit Metal Interconnects

2003 ◽  
Vol 795 ◽  
Author(s):  
J. M. M. dos Santos ◽  
K. Wang ◽  
S. M. Soare ◽  
S. J. Bull ◽  
A. B. Horsfall ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Pattern Transfer ◽  
Time To Failure ◽  
Cantilever Sensor ◽  
Induced Stress ◽  
Rotating Structure ◽  
The Mean ◽  
Metal Interconnects ◽  
Mean Time

ABSTRACTThe process-induced stress in interconnects within integrated circuits (IC) has a direct influence on the mean time to failure of the devices. Since measurement of stress in individual metallised lines is not possible by existing techniques, another approach has been adopted where a test structure is generated during fabrication based on a micro-rotating cantilever sensor. To support the design, finite element modeling (FEM) has been performed. By comparing the rotation predicted by FEM simulations and that observed experimentally, a clear discrepancy is observed which is critically dependent on the details of the sensor design, the pattern transfer of the lithographic process and on the dry etching processing.

scholarly journals Surveillance System in Smart Cities: A Dependability Evaluation Based on Stochastic Models

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 876
Author(s):  
Igor Gonçalves ◽  
Laécio Rodrigues ◽  
Francisco Airton Silva ◽  
Tuan Anh Nguyen ◽  
Dugki Min ◽  
...  
Keyword(s):  
Surveillance System ◽  
Smart Cities ◽  
Heterogeneous Data ◽  
Time To Failure ◽  
Video Streams ◽  
Dependability Evaluation ◽  
The Mean ◽  
Mean Time ◽  
The Internet Of Things

Surveillance monitoring systems are highly necessary, aiming to prevent many social problems in smart cities. The internet of things (IoT) nowadays offers a variety of technologies to capture and process massive and heterogeneous data. Due to the fact that (i) advanced analyses of video streams are performed on powerful recording devices; while (ii) surveillance monitoring services require high availability levels in the way that the service must remain connected, for example, to a connection network that offers higher speed than conventional connections; and that (iii) the trust-worthy dependability of a surveillance system depends on various factors, it is not easy to identify which components/devices in a system architecture have the most impact on the dependability for a specific surveillance system in smart cities. In this paper, we developed stochastic Petri net models for a surveillance monitoring system with regard to varying several parameters to obtain the highest dependability. Two main metrics of interest in the dependability of a surveillance system including reliability and availability were analyzed in a comprehensive manner. The analysis results show that the variation in the number of long-term evolution (LTE)-based stations contributes to a number of nines (#9s) increase in availability. The obtained results show that the variation of the mean time to failure (MTTF) of surveillance cameras exposes a high impact on the reliability of the system. The findings of this work have the potential of assisting system architects in planning more optimized systems in this field based on the proposed models.

On classes of life distributions based on the mean time to failure function

2021 ◽  
Vol 58 (2) ◽  
pp. 289-313
Author(s):  
Ruhul Ali Khan ◽  
Dhrubasish Bhattacharyya ◽  
Murari Mitra
Keyword(s):  
Damage Model ◽  
Replacement Policy ◽  
Time To Failure ◽  
Mean Time To Failure ◽  
Moment Convergence ◽  
Life Distributions ◽  
Cumulative Damage Model ◽  
The Mean ◽  
Age Replacement ◽  
Mean Time

AbstractThe performance and effectiveness of an age replacement policy can be assessed by its mean time to failure (MTTF) function. We develop shock model theory in different scenarios for classes of life distributions based on the MTTF function where the probabilities $\bar{P}_k$ of surviving the first k shocks are assumed to have discrete DMTTF, IMTTF and IDMTTF properties. The cumulative damage model of A-Hameed and Proschan [1] is studied in this context and analogous results are established. Weak convergence and moment convergence issues within the IDMTTF class of life distributions are explored. The preservation of the IDMTTF property under some basic reliability operations is also investigated. Finally we show that the intersection of IDMRL and IDMTTF classes contains the BFR family and establish results outlining the positions of various non-monotonic ageing classes in the hierarchy.

Điều trị tăng liều Imatinib trên bệnh nhân u mô đệm đường tiêu hoá giai đoạn muộn tiến triển sau điều trị bước 1 liều chuẩn

2020 ◽  
Author(s):  
Kien Do Hung
Keyword(s):  
Primary Tumor ◽  
Standard Dose ◽  
Performance Status ◽  
Gastric Tumor ◽  
High Dose ◽  
Time To Failure ◽  
Gastrointestinal Stromal Tumours ◽  
Mean Time To Failure ◽  
The Mean ◽  
Mean Time

Objective: Evaluating the result of high-dose imatinib for metastatic gastrointestinal stromal tumours after failure standard-dose first line. Patients and method: Restrospective analysis of 46 patients with metastatic gastrointestinal stromal tumours after failure standard-dose imatinib treated with high-dose imatinib at K hospital from 1/2015 đến 10/2019. Results: Median age was 54.6±9.5, male was 58.7%. The common primary tumor was gastric tumor. The mean time to failure of imatinib standard-dose 400mg/day was 38.2±5.3 months. Liver lesions were the most common lesions progressed after imatinib standard-dose failure (71.7%), primary tumor progressed was 39.1%. There was no patient who had complete response with treatment, the proportion of partial response accounted for 21.7% and stable disease was 45.7%. The clinical benefit rate was 67.4%. The sex-female, primary gastric tumor, good ECOG performance status, neutrophils, hemoglobine and albumin before treatment were the significant prognostic factors affecting the treatment response, p <0.05. The mean time to failure was 22.5 ± 3.4 (months), (min: 2.0; max: 58.0), median was 11.0 months. Conclusion: Treatment of high-dose imatinib after failure standard-dose 400mg/day showed the efficacy and good tolerance in metastatic GISTs.

ELECTROCHEMICAL MIGRATION BEHAVIOR OF Sn-3.0Ag-0.5Cu SOLDER ALLOY UNDER THIN ELECTROLYTE LAYERS

2019 ◽  
Vol 26 (06) ◽  
pp. 1850208 ◽  
Author(s):  
BOKAI LIAO ◽  
WENFENG JIA ◽  
RUIYAN SUN ◽  
ZHENYU CHEN ◽  
XINGPENG GUO
Keyword(s):  
Solder Alloy ◽  
Electrochemical Migration ◽  
Migration Behavior ◽  
Time To Failure ◽  
Sac305 Solder ◽  
Maximum Value ◽  
The Mean ◽  
Mean Time ◽  
Observation Results

The electrochemical migration (ECM) behavior of Sn-3.0Ag-0.5Cu solder alloy under thin electrolyte layers was investigated using a technique based on the coupling of in situ electrochemical measurements and optical observation. Results showed that the mean time to failure first increased and then decreased as thickness of the electrolyte layer increased, the maximum value was present at 200[Formula: see text][Formula: see text]m. The higher the bias voltage applied, the faster was the rate of dendrite growth. And, Sn leaded the ECM of SAC305 solder alloy. Mechanisms relevant have been proposed to explain the ECM behavior of Sn-3.0Ag-0.5Cu solder alloy.

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