A correlative study of microstructure and surface topography in Al-1.5%Cu films

1992 ◽  
Vol 50 (2) ◽  
pp. 1418-1419
Author(s):  
N. David Theodore ◽  
Bea Cao ◽  
Juan Carrejo ◽  
Peter A. Crozier
Keyword(s):  
Integrated Circuits ◽  
Surface Topography ◽  
Imaging Techniques ◽  
Dark Field ◽  
Material Surface ◽  
Silicon Dioxide Layer ◽  
Plan View ◽  
Cu Films ◽  
Transmission Electron ◽  
Multi Level

Al(Cu) is currently being used for interconnects in semiconductor integrated-circuits. Problems that arise with use of the material are electromigration, stress-migration, and corrosion. Electromigration and stress-migration behaviors of the films are known to depend on grain-sizes and distributions in the material. Surface topography of the films could possibly affect stress-migration as well as use of the material in multi-level metallization schemes. The present study investigates the extent of correlation between microstructure and surface topography in Al-1.5%Cu films.Substrates used for this study consisted of (100) silicon wafers with a 200 nm silicon-dioxide layer on top. Al(1.5%Cu) was sputtered onto the substrates; substrates were held at a temperature of 450°C during sputtering. Layer thicknesses were ∼740 nm. Scanning electron-microscopy was performed using a Cambridge 250-MK III SEM equipped with a heating stage. Plan-view TEM specimens were prepared in the 100 substrate-geometry. These were then analyzed using bright-field and dark-field TEM imaging techniques. A JEOL JEM 200CX transmission electron microscope was used for the investigation, operating at 200 kV.

Deposition and anneal behavior of Al-1.5%Cu films: TEM characterization

1991 ◽  
Vol 49 ◽  
pp. 884-885
Author(s):  
N. David Theodore ◽  
Mike Dreyer ◽  
Charles Varker
Keyword(s):  
Integrated Circuits ◽  
Imaging Techniques ◽  
Dark Field ◽  
Time To Failure ◽  
Plan View ◽  
Cu Films ◽  
Transmission Electron ◽  
Grain Size Distributions ◽  
The Mean ◽  
Mean Time

Al-1.5%Cu materials are of interest for interconnect-metallization in semiconductor integrated-circuits. It is known from the literature that the mean-time-to-failure (MTF) due to electromigration of the Al-1.5%Cu interconnects depends on the microstructure of the materials. A correlation is seen for instance between grain-size distributions in the material and the MTF. Uniform large-grained distributions improve lifetime. The present study evaluated the microstructure of Al-1.5%Cu films deposited and annealed under different conditions.Al-1.5%Cu films had been deposited at 25°C and at 300°C; the layers had then been annealed at 300°C for 17 hours, prior to TEM investigation. Plan-view TEM specimens were prepared in the 100 substrategeometry, and cross-section TEM specimens were prepared in the 110 substrate-geometry. These were then analyzed using bright-field and dark-field TEM imaging techniques. A JEOL JEM 200CX transmission electron microscope was used for the investigation, operating at 200 kV.

Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 383-386 ◽  
Author(s):  
Mark E. Twigg ◽  
Robert E. Stahlbush ◽  
Peter A. Losee ◽  
Can Hua Li ◽  
I. Bhat ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Dark Field ◽  
Pin Diodes ◽  
Plan View ◽  
Planar Defects ◽  
Burgers Vector ◽  
Partial Dislocations ◽  
Transmission Electron

Using light emission imaging (LEI), we have determined that not all planar defects in 4H-SiC PiN diodes expand in response to bias. Accordingly, plan-view transmission electron microscopy (TEM) observations of these diodes indicate that these static planar defects are different in structure from the mobile stacking faults (SFs) that have been previously observed in 4H-SiC PiN diodes. Bright and dark field TEM observations reveal that such planar defects are bounded by partial dislocations, and that the SFs associated with these partials display both Frank and Shockley character. That is, the Burgers vector of such partial dislocations is 1/12<4-403>. For sessile Frank partial dislocations, glide is severely constrained by the need to inject either atoms or vacancies into the expanding faulted layer. Furthermore, these overlapping SFs are seen to be fundamentally different from other planar defects found in 4H-SiC.

Morphology and Phase Metastability in the Al/Cu Thin Film Reaction.

1993 ◽  
Vol 311 ◽  
Author(s):  
E. D. McCarty ◽  
S. A. Hackney
Keyword(s):  
Average Diameter ◽  
Reaction Rates ◽  
Growth Interface ◽  
Plan View ◽  
Cu Films ◽  
High Reaction ◽  
Transmission Electron ◽  
Interdiffusion Process ◽  
Sputter Deposited ◽  
Cu Thin Film

ABSTRACTThe initial stages of the reaction between thin Al grains with an average diameter of 2 × 10−5mand sputter deposited, nanocrystalline Cu films has been studied in plan view using in situ transmission electron microscopy. At high reaction rates, the phase transformation in the Al grain resulting from the interdiffusion process is found to exhibit metastable growth morphologies characterized by negative curvature at the growth interface. The crystal structure of the initial phase formed in the Al grain under relatively high reaction rates is a metastable, orthorhombic distortion of the equilibrium body centered tetragonal θ phase. The distortion is found to vary with Al grain surface orientation. The degree of metastability can be experimentally correlated with the kinetics of the interdiffusion process as controlled by diffusion barrier thickness.

SURFACE TRANSMISSION ELECTRON MICROSCOPY ON STRUCTURES WITH TRUNCATION

1997 ◽  
Vol 04 (04) ◽  
pp. 687-694 ◽  
Author(s):  
KUNIO TAKAYANAGI ◽  
YOSHITAKA NAITOH ◽  
YOSHIFUMI OSHIMA ◽  
MASANORI MITOME
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Dark Field ◽  
Scanning Tunneling ◽  
Plan View ◽  
Step Motion ◽  
Dark Field Imaging ◽  
Surface Steps ◽  
Transmission Electron

Surface transmission electron microscopy (TEM) has been used to reveal surface steps and structures by bright and dark field imaging, and high resolution plan view and/or profile view imaging. Dynamic processes on surfaces, such as step motion, surface phase transitions and film growths, are visualized by a TV system attached to the electron microscope. Atom positions can precisely be detected by convergent beam illumination (CBI) of high resolution surface TEM. Imaging of the atomic positions of surfaces with truncation is briefly reviewed in this paper, with recent development of a TEM–STM (scanning tunneling microscope) system.

Si(111)-(5x2) Au structure from off-axis high-resolution Transmission Electron Microscopy

1994 ◽  
Vol 52 ◽  
pp. 762-763
Author(s):  
R. Plass ◽  
L. D. Marks
Keyword(s):  
High Resolution ◽  
Semiconductor Device ◽  
Dark Field ◽  
X Ray Diffraction ◽  
Plan View ◽  
Flat Surfaces ◽  
Dark Field Imaging ◽  
Semiconductor Interfaces ◽  
Transmission Electron ◽  
Field Imaging

Although metal semiconductor interfaces play a major role in semiconductor device performance the basic understanding of the atomic structure of many of these interfaces has been elusive. The submonolayer of gold on silicon (111) system is of special interest as it displays several different surface structures depending on gold coverage and temperature. Substantial light has been shed on one of these structures, the 5×2 present between .1 and .5 gold monolayers, in recent x-ray diffraction and high resolution STM studies, yet the placement of the gold atoms remains unclear. We present here a solution for this structure found using off-axis plan view HREM and digital image restoration in combination with more conventional bright-field, dark-field imaging and diffraction techniques.Instrumental details related to this experiment have been reviewed by Bonevich and Marks. Si 111 oriented TEM samples with clean, fairly flat surfaces were prepared using Ar+ ion sputter/electron beam annealing cycles.

TEM study of epitactically grown GaAs/ScxEr1−xAs/GaAs heterostructures

1990 ◽  
Vol 48 (4) ◽  
pp. 586-587
Author(s):  
Jane G. Zhu
Keyword(s):  
Crystal Structure ◽  
Lattice Mismatch ◽  
New Physics ◽  
Dark Field ◽  
Salt Crystal ◽  
Plan View ◽  
Weak Beam ◽  
Transmission Electron ◽  
Potential Applications ◽  
The Difference

The incorporation of metal layers into semiconductors is attracting growing attention due to potential applications in novel electronic devices and new physics of very thin metal films in semiconductors. This paper reports the growth of GaAs/ScxEr1−xAs/GaAs (x=0 and ∼0.3) on (100) GaAs substrates by molecular beam epitaxy (MBE) and the characterization of these heterostructures by transmission electron microscopy (TEM). ErAs, ScAs and many other rare-earth arsenides have the rock-salt crystal structure, which is different from the zinc-blende structure of GaAs. The difference in the crystal structure substantially affects the heteroepitactic growth. The lattice mismatch between ErAs (ScAs) and GaAs is 1.6% (-3.3%). Lattice-matched growth of ScxEr1−xAs/GaAs can be obtained at x=0.32. TEM has been used in this study extensively to characterize the microstructure and the growth-related defects. Both cross-section and plan-view samples have been studied using strong-beam, weak-beam dark-field and high-resolution imaging, as well as selected-area diffraction.

Atomistic observation of electron irradiation-induced defects in CeO2

2013 ◽  
Vol 1514 ◽  
pp. 93-98 ◽  
Author(s):  
Seiya Takaki ◽  
Tomokazu Yamamoto ◽  
Masanori Kutsuwada ◽  
Kazuhiro Yasuda ◽  
Syo Matsumura
Keyword(s):  
Electron Irradiation ◽  
Imaging Techniques ◽  
Dark Field ◽  
Dislocation Loops ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Annular Dark Field ◽  
Radiation Induced ◽  
Induced Defects ◽  
Irradiation Induced Defects

ABSTRACTWe have investigated the atomistic structure of radiation-induced defects in CeO2 formed under 200 keV electron irradiation. Dislocation loops on {111} habit planes are observed, and they grow accompanying strong strain-field. Atomic resolution scanning transmission electron microscopy (STEM) observations with high angle annular dark-field (HAADF) and annular bright-field (ABF) imaging techniques showed that no additional Ce layers are inserted at the position of the dislocation loop, and that strong distortion and expansion is induced around the dislocation loops. These results are discussed that dislocation loops formed under electron irradiation are non-stoichiometric defects consist of oxygen interstitials.

Microstructural characterization of oxygen-implanted poly-Si layers

1991 ◽  
Vol 49 ◽  
pp. 892-893
Author(s):  
N. David Theodore ◽  
WenLing M. Huang
Keyword(s):  
Cross Section ◽  
Microstructural Characterization ◽  
Dark Field ◽  
Rapid Thermal Anneal ◽  
Bright Field ◽  
Plan View ◽  
Transmission Electron ◽  
Microstructural Behavior ◽  
Si Films

Poly-Si layers were evaluated that had been exposed to varying doses of oxygen-implant prior to an anneal. The layers were doped (by implantation) with arsenic. Oxygen implantation was found to modify the conductivity of the doped poly-Si films. The microstructural behavior of the films was of interest (as potentially enabling explanation of the modified conductivity).The oxygen implant doses investigated in this study were 1E14 and 1E16 cm-2. The arsenic dose used (dopant incorporated by implantation) was 1.3E13 cm-2. The oxygen-implantedpoly-Si layers were annealed (rapid-thermal anneal, “RTA“) at 1050°C for 30 seconds. Cross-section TEM specimens were prepared in the 110 substrate-geometry, and plan-view TEM specimens in the 100 substrate-geometry. These were then analyzed using selected-area diffraction, bright-field, and dark-field images under gradually varying conditions of electron-beam tilt. A JEOL JEM 200CX transmission electron microscope was used for analysis, operating at 200 kV.

Transmission electron microscopy study of (103)-oriented epitaxial SrBi2Nb2O9 films grown on (111) SrTiO3 and (111) SrRuO3/(111) SrTiO3

2001 ◽  
Vol 16 (2) ◽  
pp. 489-502 ◽  
Author(s):  
M. A. Zurbuchen ◽  
J. Lettieri ◽  
Y. Jia ◽  
D. G. Schlom ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Substrate Surface ◽  
Microscopy Study ◽  
Dark Field ◽  
Electron Microscopy Study ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Second Phases

Portions of the same epitaxial (103)-oriented SrBi2Nb2O9 film grown on (111) SrTiO3 for which we recently reported the highest remanent polarization (Pr) ever achieved in SrBi2Nb2O9 (or SrBi2Ta2O9) films, i.e., Pr = 15.7 μC/cm2, have been characterized microstructurally by plan-view and cross-sectional transmission electron microscopy (TEM) along three orthogonal viewing directions. SrBi2Nb2O9 grows with its c axis tilted 57° from the substrate surface normal in a three-fold twin structure about the substrate [111], with the growth twins' c axes nominally aligned with the three 〈100〉 SrTiO3 directions. (103) SrBi2Nb2O9 films with and without an underlying epitaxial SrRuO3 bottom electrode have been studied. Dark-field TEM imaging over a 12 μm2 area shows no evidence of second phases (crystalline or amorphous). A high density of out-of-phase boundaries exists in the films.

Tem of Dislocations in Sapphire (α−Al2O3)

1983 ◽  
Vol 31 ◽  
Author(s):  
K.P.D. Lagerlöf ◽  
T.E. Mitchell ◽  
A.H. Heuer
Keyword(s):  
Elevated Temperatures ◽  
Imaging Techniques ◽  
Dark Field ◽  
Separation Distance ◽  
Prism Plane ◽  
Dark Field Imaging ◽  
Weak Beam ◽  
Partial Dislocations ◽  
Transmission Electron ◽  
Α Al2o3

ABSTRACTDissociation of both basal and prism plane dislocations in sapphire,α−Al2O3,is common and the partial dislocations can be imaged using conventional transmission electron microscopy and weak beam dark field imaging techniques. At elevated temperatures the dissociation takes place by conservative self-climb, a process involving short range diffusion, whereas at low temperatures the dissociation can occur by glide. Dissociation of a dislocation can in some situations give rise to very strong contrast when using g vectors for which g→.b→=0 for the undissociated dislocation. Those contrast conditions can be used to obtain information about the dislocation morphology and the stacking fault energy of the fault plane through determination of the separation distance.

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