Surface resonance channelling in scanning reflection electron microscopy

Author(s):  
J.M. Cowley ◽  
P.A. Crozier

The phenomena of the channelling of electrons along planes or rows of atoms in the surface layers of crystals has been investigated recently in relation to microdiffraction and RHEED, REM, (reflection electron microscopy) and REELS (reflection electron energy loss spectroscopy) by using a conventional TEM in the reflection mode.The renewed interest in this phenomenon, known for many years, is the evidence from calculations of dynamical diffraction effect at surfaces that the electrons may be channelled along the topmost layers of atoms on a crystal surface and that the RHEED, REM and REELS signals may thus be sensitive to the structure and composition of the surface layer. These techniques may therefore provide a powerful new approach to the study of surfaces in which surface microanalysis and diffraction studies may be combined with nanometer-resolution imaging.An investigation has now been made of the analogous techniques which may be applied to the study of surfaces by use of a scanning transmission electron microscope.

Author(s):  
H. Koike ◽  
S. Sakurai ◽  
K. Ueno ◽  
M. Watanabe

In recent years, there has been increasing demand for higher voltage SEMs, in the field of surface observation, especially that of magnetic domains, dislocations, and electron channeling patterns by backscattered electron microscopy. On the other hand, the resolution of the CTEM has now reached 1 ∼ 2Å, and several reports have recently been made on the observation of atom images, indicating that the ultimate goal of morphological observation has beem nearly achieved.


Author(s):  
J. R. Michael ◽  
K. A. Taylor

Although copper is considered an incidental or trace element in many commercial steels, some grades contain up to 1-2 wt.% Cu for precipitation strengthening. Previous electron microscopy and atom-probe/field-ion microscopy (AP/FIM) studies indicate that the precipitation of copper from ferrite proceeds with the formation of Cu-rich bcc zones and the subsequent transformation of these zones to fcc copper particles. However, the similarity between the atomic scattering amplitudes for iron and copper and the small misfit between between Cu-rich particles and the ferrite matrix preclude the detection of small (<5 nm) Cu-rich particles by conventional transmission electron microscopy; such particles have been imaged directly only by FIM. Here results are presented whereby the Cu Kα x-ray signal was used in a dedicated scanning transmission electron microscope (STEM) to image small Cu-rich particles in a steel. The capability to detect these small particles is expected to be helpful in understanding the behavior of copper in steels during thermomechanical processing and heat treatment.


Author(s):  
M. Tamizifar ◽  
G. Cliff ◽  
R.W. Devenish ◽  
G.W. Lorimer

Small additions of copper, <1 wt%, have a pronounced effect on the ageing response of Al-Mg-Si alloys. The object of the present investigation was to study the effect of additions of copper up to 0.5 wt% on the ageing response of a series of Al-Mg-Si alloys and to use high resolution analytical electron microscopy to determine the composition of the age hardening precipitates.The composition of the alloys investigated is given in Table 1. The alloys were heat treated in an argon atmosphere for 30m, water quenched and immediately aged either at 180°C for 15 h or given a duplex treatment of 180°C for 15 h followed by 350°C for 2 h2. The double-ageing treatment was similar to that carried out by Dumolt et al. Analyses of the precipitation were carried out with a HB 501 Scanning Transmission Electron Microscope. X-ray peak integrals were converted into weight fractions using the ratio technique of Cliff and Lorimer.


Author(s):  
J. L. Lee ◽  
C. A. Weiss ◽  
R. A. Buhrman ◽  
J. Silcox

BaF2 thin films are being investigated as candidates for use in YBa2Cu3O7-x (YBCO) / BaF2 thin film multilayer systems, given the favorable dielectric properties of BaF2. In this study, the microstructural and chemical compatibility of BaF2 thin films with YBCO thin films is examined using transmission electron microscopy and microanalysis. The specimen was prepared by using laser ablation to first deposit an approximately 2500 Å thick (0 0 1) YBCO thin film onto a (0 0 1) MgO substrate. An approximately 7500 Å thick (0 0 1) BaF2 thin film was subsequendy thermally evaporated onto the YBCO film.Images from a VG HB501A UHV scanning transmission electron microscope (STEM) operating at 100 kV show that the thickness of the BaF2 film is rather uniform, with the BaF2/YBCO interface being quite flat. Relatively few intrinsic defects, such as hillocks and depressions, were evident in the BaF2 film. Moreover, the hillocks and depressions appear to be faceted along {111} planes, suggesting that the surface is smooth and well-ordered on an atomic scale and that an island growth mechanism is involved in the evolution of the BaF2 film.


Author(s):  
John B. Vander Sande ◽  
Thomas F. Kelly ◽  
Douglas Imeson

In the scanning transmission electron microscope (STEM) a fine probe of electrons is scanned across the thin specimen, or the probe is stationarily placed on a volume of interest, and various products of the electron-specimen interaction are then collected and used for image formation or microanalysis. The microanalysis modes usually employed in STEM include, but are not restricted to, energy dispersive X-ray analysis, electron energy loss spectroscopy, and microdiffraction.


2001 ◽  
Vol 7 (S2) ◽  
pp. 342-343
Author(s):  
S. Köstlmeier ◽  
S. Nufer ◽  
T. Gemming ◽  
M. Rühle

The orientation dependence of the fine structure of the Al L1 and L2,3 electron energy loss (EELS) edges in (α-Al2O3 has been investigated by measurements with a dedicated scanning transmission electron microscope (VG HB501 STEM, 100 keV acceleration voltage). α-Al2O3 is an anisotropic solid with a complicated alternating stacking sequence of fee Al and hcp O planes along the [0001] direction [1]. This distingiushes the [0001] direction crystallographically, as the highest-order three-fold rotation axes (C3) of the trigonal crystal structure are parallel to [0001], whereas all other symmetry elements are of lower order. Group theory predicts, that more stringent symmetry selection rules apply when electronic transitions are excited by irradiation parallel to the low-index [0001] zone axis than by irradiation along any other arbitrary direction.Yet, even for a low-energy EELS edge (θE = 0.4 mrad) both scattering parallel and perpendicular to the incident beam direction are likely.


1985 ◽  
Vol 62 ◽  
Author(s):  
Tung Hsu ◽  
S. R. Nutt

ABSTRACTSurfaces of commercially grown edge-defined film-fed growth sapphire (EFG α-Al2O3) were studied in the electron microscope using both reflection electron microscopy (REM) and conventional transmission electron microscopy (TEM). The as-grown sapphire surface, ostensibly {1120}, was characterized by “rooftop” structures which were often locally periodic. These rooftop structures consisted of alternating {1120} facets and additional facets inclined a few degrees. The crystallography of the surface facets was analyzed using REM imaging of bulk specimens, and trace analysis of back-thinned plan section TEM specimens. Surface roughness was measured by stylus profilometry. and these measurements were compared to the electron microscopy observations. Fine structural features parallel to <0110> directions were also observed in both REM and TEM experiments, and these were attributed to surface steps of atomic scales.


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