Distortion Correction in Scanning Transmission Electron Microcopy with Controllable Scanning Pathways

Calculations have been performed on the contrast obtainable, using the Scanning Transmission Electron Microscope, in the observation of thick specimens. Recent research indicates a revival of an earlier interest in the observation of thin specimens with the view of comparing the attainable contrast using both types of specimens.Potential for biological applications of scanning transmission electron microscopy has led to a proliferation of the literature concerning specimen preparation methods and the controversy over “to stain or not to stain” in combination with the use of the dark field operating mode and the same choice of technique using bright field mode of operation has not yet been resolved.

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Undecagold labeling of tRNA

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100084521 ◽

1991 ◽

Vol 49 ◽

pp. 44-45

Author(s):

James F. Hainfeld ◽

Kyra M. Alford ◽

Mathias Sprinzl ◽

Valsan Mandiyan ◽

Santa J. Tumminia ◽

...

Keyword(s):

High Resolution ◽

Transmission Electron Micrograph ◽

Anticodon Loop ◽

Electron Micrograph ◽

Reaction Conditions ◽

Scanning Transmission Electron ◽

Transmission Electron ◽

Scanning Transmission

The undecagold (Au11) cluster was used to covalently label tRNA molecules at two specific ribonucleotides, one at position 75, and one at position 32 near the anticodon loop. Two different Au11 derivatives were used, one with a monomaleimide and one with a monoiodacetamide to effect efficient reactions.The first tRNA labeled was yeast tRNAphe which had a 2-thiocytidine (s2C) enzymatically introduced at position 75. This was found to react with the iodoacetamide-Aun derivative (Fig. 1) but not the maleimide-Aun (Fig. 2). Reaction conditions were 37° for 16 hours. Addition of dimethylformamide (DMF) up to 70% made no improvement in the labeling yield. A high resolution scanning transmission electron micrograph (STEM) taken using the darkfield elastically scattered electrons is shown in Fig. 3.

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A General Method for Spectrometer Design in the Scoff Approximation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100092657 ◽

1976 ◽

Vol 34 ◽

pp. 538-539

Author(s):

J. R. Fields

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Energy Analysis ◽

Incident Beam ◽

Scanning Transmission Electron Microscope ◽

Chemical Identification ◽

Scanning Transmission Electron ◽

Transmission Electron ◽

Scanning Transmission ◽

General Method

The energy analysis of electrons scattered by a specimen in a scanning transmission electron microscope can improve contrast as well as aid in chemical identification. In so far as energy analysis is useful, one would like to be able to design a spectrometer which is tailored to his particular needs. In our own case, we require a spectrometer which will accept a parallel incident beam and which will focus the electrons in both the median and perpendicular planes. In addition, since we intend to follow the spectrometer by a detector array rather than a single energy selecting slit, we need as great a dispersion as possible. Therefore, we would like to follow our spectrometer by a magnifying lens. Consequently, the line along which electrons of varying energy are dispersed must be normal to the direction of the central ray at the spectrometer exit.

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Resolution in the Scanning Transmission Electron Microscope

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100095522 ◽

1972 ◽

Vol 30 ◽

pp. 454-455

Author(s):

M. G. R. Thomson

Keyword(s):

Electron Microscope ◽

Transmission Electron Microscope ◽

Spherical Aberration ◽

Signal To Noise Ratio ◽

Scanning Transmission Electron Microscope ◽

Dark Field ◽

Objective Lens ◽

Scanning Transmission Electron ◽

Transmission Electron ◽

Scanning Transmission

The variation of contrast and signal to noise ratio with change in detector solid angle in the high resolution scanning transmission electron microscope was discussed in an earlier paper. In that paper the conclusions were that the most favourable conditions for the imaging of isolated single heavy atoms were, using the notation in figure 1, either bright field phase contrast with β0⋍0.5 α0, or dark field with an annular detector subtending an angle between ao and effectively π/2.The microscope is represented simply by the model illustrated in figure 1, and the objective lens is characterised by its coefficient of spherical aberration Cs. All the results for the Scanning Transmission Electron Microscope (STEM) may with care be applied to the Conventional Electron Microscope (CEM). The object atom is represented as detailed in reference 2, except that ϕ(θ) is taken to be the constant ϕ(0) to simplify the integration. This is reasonable for θ ≤ 0.1 θ0, where 60 is the screening angle.

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Scanning Transmission Electron Microscopy of Polyethylene Crystals

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s1431927600001069 ◽

1980 ◽

Vol 38 ◽

pp. 242-245

Author(s):

F. Khoury ◽

L. H. Bolz

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Crystallization Temperature ◽

Scanning Transmission Electron Microscopy ◽

Growth Habit ◽

Lateral Growth ◽

Scanning Transmission Electron ◽

Transmission Electron ◽

Scanning Transmission ◽

Growth Habits

The lateral growth habits and non-planar conformations of polyethylene crystals grown from dilute solutions (<0.1% wt./vol.) are known to vary depending on the crystallization temperature.1-3 With the notable exception of a study by Keith2, most previous studies have been limited to crystals grown at <95°C. The trend in the change of the lateral growth habit of the crystals with increasing crystallization temperature (other factors remaining equal, i.e. polymer mol. wt. and concentration, solvent) is illustrated in Fig.l. The lateral growth faces in the lozenge shaped type of crystal (Fig.la) which is formed at lower temperatures are {110}. Crystals formed at higher temperatures exhibit 'truncated' profiles (Figs. lb,c) and are bound laterally by (110) and (200} growth faces. In addition, the shape of the latter crystals is all the more truncated (Fig.lc), and hence all the more elongated parallel to the b-axis, the higher the crystallization temperature.

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Local Lattice Strain Measurement Using Geometric Phase Analysis of Dark Field Images from Scanning Transmission Electron Microscopy

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0024 ◽

2011 ◽

Author(s):

Jayhoon Chung ◽

Guoda Lian ◽

Lew Rabenberg

Keyword(s):

Phase Analysis ◽

Geometric Phase ◽

Process Development ◽

Local Strain ◽

Strain Engineering ◽

Dark Field ◽

Scanning Transmission Electron ◽

Transmission Electron ◽

Geometric Phase Analysis ◽

Scanning Transmission

Abstract Since strain engineering plays a key role in semiconductor technology development, a reliable and reproducible technique to measure local strain in devices is necessary for process development and failure analysis. In this paper, geometric phase analysis of high angle annular dark field - scanning transmission electron microscope images is presented as an effective technique to measure local strains in the current node of Si based transistors.

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